FR2427734A1 - Montage pour stabiliser le point de fonctionnement d'un transistor a effet de champ amplificateur - Google Patents

Montage pour stabiliser le point de fonctionnement d'un transistor a effet de champ amplificateur

Info

Publication number
FR2427734A1
FR2427734A1 FR7913363A FR7913363A FR2427734A1 FR 2427734 A1 FR2427734 A1 FR 2427734A1 FR 7913363 A FR7913363 A FR 7913363A FR 7913363 A FR7913363 A FR 7913363A FR 2427734 A1 FR2427734 A1 FR 2427734A1
Authority
FR
France
Prior art keywords
effect transistor
operating point
transistor
stabilize
mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7913363A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2427734A1 publication Critical patent/FR2427734A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/226—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with junction-FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H03F3/165—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices with junction-FET's

Abstract

L'invention concerne un montage pour stabiliser le point de fonctionnement d'un transistor à effet de champ amplificateur. Dans ce montage, qui comporte un transistor à effet de champ amplificateur T1 , en série et en aval duquel est branché en tant que résistance de charge un second transistor T2 , un diviseur de tension R2 , R3 , dont la prise médiane A est reliée à la base ou à la grille du second transistor T2 , est branché en parallèle sur la voie source-drain du second transistor T2 . Application notamment aux circuits numériques.
FR7913363A 1978-05-30 1979-05-25 Montage pour stabiliser le point de fonctionnement d'un transistor a effet de champ amplificateur Withdrawn FR2427734A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782823662 DE2823662A1 (de) 1978-05-30 1978-05-30 Schaltungsanordnung zur arbeitspunktstabilisierung eines verstaerker-feldeffekttransistors

Publications (1)

Publication Number Publication Date
FR2427734A1 true FR2427734A1 (fr) 1979-12-28

Family

ID=6040573

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7913363A Withdrawn FR2427734A1 (fr) 1978-05-30 1979-05-25 Montage pour stabiliser le point de fonctionnement d'un transistor a effet de champ amplificateur

Country Status (4)

Country Link
DE (1) DE2823662A1 (fr)
FR (1) FR2427734A1 (fr)
GB (1) GB2021892A (fr)
IT (1) IT1112933B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3028614A1 (en) * 1979-01-18 1981-02-26 Kavanau L Field effect transconductance amplifiers

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1199378A (fr) * 1984-04-02 1986-01-14 Paul Bura Amplificateur haute frequence a compensation de phases
DE4134176C2 (de) * 1991-10-16 1994-04-21 Telefunken Microelectron Halbleiteranordnung mit einer im Halbleiterkörper integrierten und aus zwei Feldeffekttransistoren aufgebauten Tetrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3028614A1 (en) * 1979-01-18 1981-02-26 Kavanau L Field effect transconductance amplifiers

Also Published As

Publication number Publication date
IT1112933B (it) 1986-01-20
GB2021892A (en) 1979-12-05
DE2823662A1 (de) 1979-12-06
IT7922793A0 (it) 1979-05-18

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Legal Events

Date Code Title Description
ST Notification of lapse