GB2021892A - Active loads for FET amplifiers - Google Patents

Active loads for FET amplifiers

Info

Publication number
GB2021892A
GB2021892A GB7918619A GB7918619A GB2021892A GB 2021892 A GB2021892 A GB 2021892A GB 7918619 A GB7918619 A GB 7918619A GB 7918619 A GB7918619 A GB 7918619A GB 2021892 A GB2021892 A GB 2021892A
Authority
GB
United Kingdom
Prior art keywords
active loads
fet
fet amplifiers
load resistance
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB7918619A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB2021892A publication Critical patent/GB2021892A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/226—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with junction-FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H03F3/165—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices with junction-FET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

A transistor T2 forming the load resistance for an FET T1 has its control electrode connected to a tapping A of a potential divider R3, R5, R8, connected to receive at least the AC component of the voltage across the load T2. In spite of manufacturing variations the differential load resistance of T2 and the drain voltage of T1 are thereby freely selectable. In the embodiment of Figure 3 an emitter-follower transistor T3 determines the operating point of T2. <IMAGE>
GB7918619A 1978-05-30 1979-05-29 Active loads for FET amplifiers Withdrawn GB2021892A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782823662 DE2823662A1 (en) 1978-05-30 1978-05-30 CIRCUIT ARRANGEMENT FOR WORK POINT STABILIZATION OF AN AMPLIFIER FIELD EFFECT TRANSISTOR

Publications (1)

Publication Number Publication Date
GB2021892A true GB2021892A (en) 1979-12-05

Family

ID=6040573

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7918619A Withdrawn GB2021892A (en) 1978-05-30 1979-05-29 Active loads for FET amplifiers

Country Status (4)

Country Link
DE (1) DE2823662A1 (en)
FR (1) FR2427734A1 (en)
GB (1) GB2021892A (en)
IT (1) IT1112933B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4535304A (en) * 1984-04-02 1985-08-13 Northern Telecom Limited High frequency amplifier with phase compensation

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4241316A (en) * 1979-01-18 1980-12-23 Lawrence Kavanau Field effect transconductance amplifiers
DE4134176C2 (en) * 1991-10-16 1994-04-21 Telefunken Microelectron Semiconductor arrangement with a tetrode integrated in the semiconductor body and made up of two field effect transistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4535304A (en) * 1984-04-02 1985-08-13 Northern Telecom Limited High frequency amplifier with phase compensation

Also Published As

Publication number Publication date
IT1112933B (en) 1986-01-20
DE2823662A1 (en) 1979-12-06
FR2427734A1 (en) 1979-12-28
IT7922793A0 (en) 1979-05-18

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)