DE3025488A1 - Photomaske, photoaetzverfahren und verwendung der photomaske - Google Patents
Photomaske, photoaetzverfahren und verwendung der photomaskeInfo
- Publication number
- DE3025488A1 DE3025488A1 DE19803025488 DE3025488A DE3025488A1 DE 3025488 A1 DE3025488 A1 DE 3025488A1 DE 19803025488 DE19803025488 DE 19803025488 DE 3025488 A DE3025488 A DE 3025488A DE 3025488 A1 DE3025488 A1 DE 3025488A1
- Authority
- DE
- Germany
- Prior art keywords
- photomask
- circular
- photo
- photo mask
- photomasks
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000001259 photo etching Methods 0.000 title claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 229910052681 coesite Inorganic materials 0.000 description 7
- 229910052906 cristobalite Inorganic materials 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 229910052682 stishovite Inorganic materials 0.000 description 7
- 229910052905 tridymite Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000005406 washing Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8606479A JPS5610928A (en) | 1979-07-07 | 1979-07-07 | Preparation of electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3025488A1 true DE3025488A1 (de) | 1981-02-26 |
Family
ID=13876262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803025488 Withdrawn DE3025488A1 (de) | 1979-07-07 | 1980-07-04 | Photomaske, photoaetzverfahren und verwendung der photomaske |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5610928A (fr) |
| DE (1) | DE3025488A1 (fr) |
| FR (1) | FR2461282A1 (fr) |
| GB (1) | GB2054903A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0339953A2 (fr) * | 1988-04-28 | 1989-11-02 | Canon Kabushiki Kaisha | Masque lithographique et dispositif pour le positionnement à cet effet |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5946026A (ja) * | 1982-09-09 | 1984-03-15 | Toshiba Corp | 試料位置測定方法 |
| DE19815295C2 (de) | 1998-04-06 | 2003-05-15 | Rheinmetall W & M Gmbh | Aus einem Waffenrohr verschießbares drallstabilisiertes Artilleriegeschoß |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3892973A (en) * | 1974-02-15 | 1975-07-01 | Bell Telephone Labor Inc | Mask structure for X-ray lithography |
| JPS5229063U (fr) * | 1975-08-20 | 1977-03-01 | ||
| US4080267A (en) * | 1975-12-29 | 1978-03-21 | International Business Machines Corporation | Method for forming thick self-supporting masks |
| US4037111A (en) * | 1976-06-08 | 1977-07-19 | Bell Telephone Laboratories, Incorporated | Mask structures for X-ray lithography |
| JPS53135278A (en) * | 1977-04-30 | 1978-11-25 | Mitsubishi Electric Corp | Photomask for photomechanics |
| US4171489A (en) * | 1978-09-13 | 1979-10-16 | Bell Telephone Laboratories, Incorporated | Radiation mask structure |
| US4253029A (en) * | 1979-05-23 | 1981-02-24 | Bell Telephone Laboratories, Incorporated | Mask structure for x-ray lithography |
-
1979
- 1979-07-07 JP JP8606479A patent/JPS5610928A/ja active Pending
-
1980
- 1980-07-02 FR FR8014710A patent/FR2461282A1/fr not_active Withdrawn
- 1980-07-04 DE DE19803025488 patent/DE3025488A1/de not_active Withdrawn
- 1980-07-04 GB GB8022078A patent/GB2054903A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0339953A2 (fr) * | 1988-04-28 | 1989-11-02 | Canon Kabushiki Kaisha | Masque lithographique et dispositif pour le positionnement à cet effet |
| EP0339953A3 (en) * | 1988-04-28 | 1990-10-24 | Canon Kabushiki Kaisha | Lithographic mask structure and device for positioning the same |
| US5042945A (en) * | 1988-04-28 | 1991-08-27 | Canon Kabushiki Kaisha | Lithographic mask structure and device for positioning the same |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2054903A (en) | 1981-02-18 |
| FR2461282A1 (fr) | 1981-01-30 |
| JPS5610928A (en) | 1981-02-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3636220C2 (de) | Verfahren zum Formen von Gate-Elektrodenmaterial in einem invertierten Dünnfilm-Feldeffekttransistor | |
| DE10056541B4 (de) | Verfahren zum Reinigen von Quarzsubstraten unter Verwendung von leitenden Lösungen | |
| DE2460988C2 (de) | Verfahren zum Niederschlagen eines Musters aus einem dünnen Film auf einem anorganischen Substrat | |
| DE2431960C3 (de) | Verfahren zum Erzeugen einer strukturierten Schicht auf einem Substrat mit Hilfe von Photoätzprozessen sowie Einrichtung zur Durchführung dieses Verfahrens | |
| DE1614999B2 (de) | Verfahren zum herstellen einer maskierungsschicht aus dielektrischem material | |
| DE10338088A1 (de) | Verfahren zur Herstellung eines Glassubstrats für einen Maskenrohling, Verfahren zur Herstellung eines Maskenrohlings, Verfahren zur Herstellung einer Transfermaske, Verfahren zur Herstllung eines Halbleiterbauelements, Glassubstrat für einen Maskenrohling, Maskenrohling und Transfermaske | |
| DE2802654A1 (de) | Verfahren zum befestigen einer halbleiterplatte an der oberflaeche einer laeppscheibe | |
| DE3539201C2 (fr) | ||
| DE3537584A1 (de) | Verfahren zur verhinderung einer korrosion nach durchfuehrung einer aluminium-aetzung | |
| DE102006020823A1 (de) | Verfahren zur Herstellung einer polierten Halbleiterscheibe | |
| DE112010004989T5 (de) | Halbleiterwafer und Verfahren zur Herstellung desselben | |
| DE102004035617B4 (de) | Verfahren zur Herstellung von Substraten für Fotomaskenrohlinge | |
| DE10012803A1 (de) | Verfahren und Vorrichtung zum Waschen von Photomasken und Waschlösung für Photomasken | |
| DE112018001890T5 (de) | Mtj-vorrichtungsprozess / integrationsverfahren mit vor-strukturierter keimschicht | |
| DE10235229A1 (de) | Gegen eine elektrostatische Beschädigung (ESD) geschützte Photomaske | |
| EP0038951B1 (fr) | Procédé de réalisation de structures de produits photosensibles pour circuits intégrés | |
| DE3025488A1 (de) | Photomaske, photoaetzverfahren und verwendung der photomaske | |
| DE102015109358A1 (de) | Verfahren und vorrichtung zum belichten einer struktur auf einem substrat | |
| DE2123887C3 (fr) | ||
| DE60216882T2 (de) | Photomaske mit Vorrichtung zum Schutz vor Staub und Belichtungsmethode unter Verwendung dieser Photomaske | |
| DE102004031079A1 (de) | Reflexionsmaske, Verwendung der Reflexionsmaske und Verfahren zur Herstellung der Reflexionsmaske | |
| CH653138A5 (de) | Verfahren zur herstellung von mattstreuenden strukturen neben opaken und/oder transparenten strukturen. | |
| EP1270504A1 (fr) | Dispositif à semiconducteur attaché à un wafer | |
| DE2261123A1 (de) | Maske fuer photolithographische verfahren | |
| DE2225366A1 (de) | Verfahren zum Entfernen von Vor Sprüngen an Epitaxie Schichten |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |