DE3021221C2 - Ionenstrahlquelle - Google Patents

Ionenstrahlquelle

Info

Publication number
DE3021221C2
DE3021221C2 DE3021221A DE3021221A DE3021221C2 DE 3021221 C2 DE3021221 C2 DE 3021221C2 DE 3021221 A DE3021221 A DE 3021221A DE 3021221 A DE3021221 A DE 3021221A DE 3021221 C2 DE3021221 C2 DE 3021221C2
Authority
DE
Germany
Prior art keywords
ion beam
electrode
beam source
discharge chamber
insert
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3021221A
Other languages
German (de)
English (en)
Other versions
DE3021221A1 (de
Inventor
Ichiro Tokyo Kanomata
Hidemi Tokorozawa Saitama Koike
Noriyuki Sakudo
Katsumi Tokyo Tokiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3021221A1 publication Critical patent/DE3021221A1/de
Application granted granted Critical
Publication of DE3021221C2 publication Critical patent/DE3021221C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
DE3021221A 1979-06-04 1980-06-04 Ionenstrahlquelle Expired DE3021221C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54068952A JPS5852297B2 (ja) 1979-06-04 1979-06-04 マイクロ波イオン源

Publications (2)

Publication Number Publication Date
DE3021221A1 DE3021221A1 (de) 1980-12-11
DE3021221C2 true DE3021221C2 (de) 1982-08-26

Family

ID=13388504

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3021221A Expired DE3021221C2 (de) 1979-06-04 1980-06-04 Ionenstrahlquelle

Country Status (6)

Country Link
US (1) US4316090A (enExample)
JP (1) JPS5852297B2 (enExample)
DE (1) DE3021221C2 (enExample)
FR (1) FR2461351A1 (enExample)
GB (1) GB2053559B (enExample)
NL (1) NL8003233A (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5947421B2 (ja) * 1980-03-24 1984-11-19 株式会社日立製作所 マイクロ波イオン源
JPS58164134A (ja) * 1982-03-24 1983-09-29 Hitachi Ltd 半導体装置の製造方法
US4691662A (en) * 1983-02-28 1987-09-08 Michigan State University Dual plasma microwave apparatus and method for treating a surface
US4507588A (en) * 1983-02-28 1985-03-26 Board Of Trustees Operating Michigan State University Ion generating apparatus and method for the use thereof
US5389793A (en) * 1983-08-15 1995-02-14 Applied Materials, Inc. Apparatus and methods for ion implantation
US4847504A (en) * 1983-08-15 1989-07-11 Applied Materials, Inc. Apparatus and methods for ion implantation
JPH0727766B2 (ja) * 1983-08-15 1995-03-29 アプライド マテリアルズ インコーポレーテッド イオン打込み装置及びイオン源装置作動方法
DE3584105D1 (de) * 1984-03-16 1991-10-24 Hitachi Ltd Ionenquelle.
EP0360932A1 (en) * 1988-09-28 1990-04-04 Norman A. Bostrom Microwave ion source
US4797597A (en) * 1986-12-22 1989-01-10 Bostrom Norman A Microwave ion source
US4778561A (en) * 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source
DE3738352A1 (de) 1987-11-11 1989-05-24 Technics Plasma Gmbh Filamentloses magnetron-ionenstrahlsystem
DE68926923T2 (de) * 1988-03-16 1996-12-19 Hitachi Ltd Mikrowellenionenquelle
GB2230644B (en) * 1989-02-16 1994-03-23 Tokyo Electron Ltd Electron beam excitation ion source
US4906900A (en) * 1989-04-03 1990-03-06 Board Of Trustees Operating Michigan State University Coaxial cavity type, radiofrequency wave, plasma generating apparatus
US5026997A (en) * 1989-11-13 1991-06-25 Eaton Corporation Elliptical ion beam distribution method and apparatus
RU2151438C1 (ru) * 1999-09-23 2000-06-20 Бугров Глеб Эльмирович Плазменный источник ионов с ленточным пучком (варианты)
JP4289837B2 (ja) 2002-07-15 2009-07-01 アプライド マテリアルズ インコーポレイテッド イオン注入方法及びｓｏｉウエハの製造方法
JP4328067B2 (ja) 2002-07-31 2009-09-09 アプライド マテリアルズ インコーポレイテッド イオン注入方法及びｓｏｉウエハの製造方法、並びにイオン注入装置
CN100580858C (zh) * 2006-11-21 2010-01-13 中国原子能科学研究院 微波离子源
WO2014201292A1 (en) * 2013-06-12 2014-12-18 General Plasma, Inc. Anode layer slit ion source

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3137801A (en) * 1960-09-22 1964-06-16 High Voltage Engineering Corp Duoplasmatron-type ion source including a non-magnetic anode and magnetic extractor electrode
US3552124A (en) * 1968-09-09 1971-01-05 Nasa Ion thrustor accelerator system
US4058748A (en) * 1976-05-13 1977-11-15 Hitachi, Ltd. Microwave discharge ion source
US4146810A (en) * 1977-12-29 1979-03-27 International Business Machines Corporation Radiation heated acceleration

Also Published As

Publication number Publication date
GB2053559B (en) 1983-05-25
US4316090A (en) 1982-02-16
NL8003233A (nl) 1980-12-08
JPS5852297B2 (ja) 1983-11-21
FR2461351A1 (fr) 1981-01-30
GB2053559A (en) 1981-02-04
DE3021221A1 (de) 1980-12-11
FR2461351B1 (enExample) 1984-03-09
JPS55161341A (en) 1980-12-15

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Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
D2 Grant after examination
8328 Change in the person/name/address of the agent

Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 8000 MUENCHEN