FR2461351A1 - Source d'ions a plasma uhf - Google Patents
Source d'ions a plasma uhf Download PDFInfo
- Publication number
- FR2461351A1 FR2461351A1 FR8012181A FR8012181A FR2461351A1 FR 2461351 A1 FR2461351 A1 FR 2461351A1 FR 8012181 A FR8012181 A FR 8012181A FR 8012181 A FR8012181 A FR 8012181A FR 2461351 A1 FR2461351 A1 FR 2461351A1
- Authority
- FR
- France
- Prior art keywords
- plasma
- electrode
- ion source
- parts
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000605 extraction Methods 0.000 claims abstract description 9
- 150000002500 ions Chemical class 0.000 claims description 36
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 4
- 102220201196 rs779449573 Human genes 0.000 claims 3
- 239000007772 electrode material Substances 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 7
- 238000010276 construction Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000010884 ion-beam technique Methods 0.000 description 10
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 229910000070 arsenic hydride Inorganic materials 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
- H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54068952A JPS5852297B2 (ja) | 1979-06-04 | 1979-06-04 | マイクロ波イオン源 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2461351A1 true FR2461351A1 (fr) | 1981-01-30 |
| FR2461351B1 FR2461351B1 (enExample) | 1984-03-09 |
Family
ID=13388504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8012181A Granted FR2461351A1 (fr) | 1979-06-04 | 1980-06-02 | Source d'ions a plasma uhf |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4316090A (enExample) |
| JP (1) | JPS5852297B2 (enExample) |
| DE (1) | DE3021221C2 (enExample) |
| FR (1) | FR2461351A1 (enExample) |
| GB (1) | GB2053559B (enExample) |
| NL (1) | NL8003233A (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5947421B2 (ja) * | 1980-03-24 | 1984-11-19 | 株式会社日立製作所 | マイクロ波イオン源 |
| JPS58164134A (ja) * | 1982-03-24 | 1983-09-29 | Hitachi Ltd | 半導体装置の製造方法 |
| US4691662A (en) * | 1983-02-28 | 1987-09-08 | Michigan State University | Dual plasma microwave apparatus and method for treating a surface |
| US4507588A (en) * | 1983-02-28 | 1985-03-26 | Board Of Trustees Operating Michigan State University | Ion generating apparatus and method for the use thereof |
| US4847504A (en) * | 1983-08-15 | 1989-07-11 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
| US5389793A (en) * | 1983-08-15 | 1995-02-14 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
| DE3478775D1 (en) * | 1983-08-15 | 1989-07-27 | Applied Materials Inc | Apparatus and method for ion implantation |
| EP0154824B1 (en) * | 1984-03-16 | 1991-09-18 | Hitachi, Ltd. | Ion source |
| US4797597A (en) * | 1986-12-22 | 1989-01-10 | Bostrom Norman A | Microwave ion source |
| EP0360932A1 (en) * | 1988-09-28 | 1990-04-04 | Norman A. Bostrom | Microwave ion source |
| US4778561A (en) * | 1987-10-30 | 1988-10-18 | Veeco Instruments, Inc. | Electron cyclotron resonance plasma source |
| DE3738352A1 (de) | 1987-11-11 | 1989-05-24 | Technics Plasma Gmbh | Filamentloses magnetron-ionenstrahlsystem |
| EP0334184B1 (en) * | 1988-03-16 | 1996-08-14 | Hitachi, Ltd. | Microwave ion source |
| GB2230644B (en) * | 1989-02-16 | 1994-03-23 | Tokyo Electron Ltd | Electron beam excitation ion source |
| US4906900A (en) * | 1989-04-03 | 1990-03-06 | Board Of Trustees Operating Michigan State University | Coaxial cavity type, radiofrequency wave, plasma generating apparatus |
| US5026997A (en) * | 1989-11-13 | 1991-06-25 | Eaton Corporation | Elliptical ion beam distribution method and apparatus |
| RU2151438C1 (ru) * | 1999-09-23 | 2000-06-20 | Бугров Глеб Эльмирович | Плазменный источник ионов с ленточным пучком (варианты) |
| JP4289837B2 (ja) | 2002-07-15 | 2009-07-01 | アプライド マテリアルズ インコーポレイテッド | イオン注入方法及びｓｏｉウエハの製造方法 |
| JP4328067B2 (ja) | 2002-07-31 | 2009-09-09 | アプライド マテリアルズ インコーポレイテッド | イオン注入方法及びｓｏｉウエハの製造方法、並びにイオン注入装置 |
| CN100580858C (zh) * | 2006-11-21 | 2010-01-13 | 中国原子能科学研究院 | 微波离子源 |
| US10134557B2 (en) * | 2013-06-12 | 2018-11-20 | General Plasma, Inc. | Linear anode layer slit ion source |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4058748A (en) * | 1976-05-13 | 1977-11-15 | Hitachi, Ltd. | Microwave discharge ion source |
| US4146810A (en) * | 1977-12-29 | 1979-03-27 | International Business Machines Corporation | Radiation heated acceleration |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3137801A (en) * | 1960-09-22 | 1964-06-16 | High Voltage Engineering Corp | Duoplasmatron-type ion source including a non-magnetic anode and magnetic extractor electrode |
| US3552124A (en) * | 1968-09-09 | 1971-01-05 | Nasa | Ion thrustor accelerator system |
-
1979
- 1979-06-04 JP JP54068952A patent/JPS5852297B2/ja not_active Expired
-
1980
- 1980-05-30 US US06/154,824 patent/US4316090A/en not_active Expired - Lifetime
- 1980-06-02 FR FR8012181A patent/FR2461351A1/fr active Granted
- 1980-06-03 NL NL8003233A patent/NL8003233A/nl not_active Application Discontinuation
- 1980-06-03 GB GB8018152A patent/GB2053559B/en not_active Expired
- 1980-06-04 DE DE3021221A patent/DE3021221C2/de not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4058748A (en) * | 1976-05-13 | 1977-11-15 | Hitachi, Ltd. | Microwave discharge ion source |
| US4146810A (en) * | 1977-12-29 | 1979-03-27 | International Business Machines Corporation | Radiation heated acceleration |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2053559B (en) | 1983-05-25 |
| DE3021221C2 (de) | 1982-08-26 |
| GB2053559A (en) | 1981-02-04 |
| NL8003233A (nl) | 1980-12-08 |
| JPS5852297B2 (ja) | 1983-11-21 |
| US4316090A (en) | 1982-02-16 |
| DE3021221A1 (de) | 1980-12-11 |
| FR2461351B1 (enExample) | 1984-03-09 |
| JPS55161341A (en) | 1980-12-15 |
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