DE68926923T2 - Mikrowellenionenquelle - Google Patents

Mikrowellenionenquelle

Info

Publication number
DE68926923T2
DE68926923T2 DE68926923T DE68926923T DE68926923T2 DE 68926923 T2 DE68926923 T2 DE 68926923T2 DE 68926923 T DE68926923 T DE 68926923T DE 68926923 T DE68926923 T DE 68926923T DE 68926923 T2 DE68926923 T2 DE 68926923T2
Authority
DE
Germany
Prior art keywords
ion source
microwave ion
microwave
source
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68926923T
Other languages
English (en)
Other versions
DE68926923D1 (de
Inventor
Hidemi Koike
Noriyuki Sakudo
Katsumi Tokiguchi
Takayoshi Seki
Kensuke Amemiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE68926923D1 publication Critical patent/DE68926923D1/de
Application granted granted Critical
Publication of DE68926923T2 publication Critical patent/DE68926923T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
DE68926923T 1988-03-16 1989-03-15 Mikrowellenionenquelle Expired - Fee Related DE68926923T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6037988 1988-03-16

Publications (2)

Publication Number Publication Date
DE68926923D1 DE68926923D1 (de) 1996-09-19
DE68926923T2 true DE68926923T2 (de) 1996-12-19

Family

ID=13140448

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68926923T Expired - Fee Related DE68926923T2 (de) 1988-03-16 1989-03-15 Mikrowellenionenquelle

Country Status (3)

Country Link
US (1) US5053678A (de)
EP (1) EP0334184B1 (de)
DE (1) DE68926923T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10138693A1 (de) * 2001-08-07 2003-07-10 Schott Glas Vorrichtung zum Beschichten von Gegenständen

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US5173641A (en) * 1990-09-14 1992-12-22 Tokyo Electron Limited Plasma generating apparatus
DE4037091C2 (de) * 1990-11-22 1996-06-20 Leybold Ag Vorrichtung für die Erzeugung eines homogenen Mikrowellenfeldes
AU1240692A (en) * 1991-05-21 1992-12-30 Materials Research Corporation Cluster tool soft etch module and ecr plasma generator therefor
RU2030811C1 (ru) * 1991-05-24 1995-03-10 Инженерный центр "Плазмодинамика" Установка для плазменной обработки твердого тела
DE4136297A1 (de) * 1991-11-04 1993-05-06 Plasma Electronic Gmbh, 7024 Filderstadt, De Vorrichtung zur lokalen erzeugung eines plasmas in einer behandlungskammer mittels mikrowellenanregung
US5543688A (en) * 1994-08-26 1996-08-06 Applied Materials Inc. Plasma generation apparatus with interleaved electrodes and corresponding method
JPH08102279A (ja) * 1994-09-30 1996-04-16 Hitachi Ltd マイクロ波プラズマ生成装置
TW285746B (de) * 1994-10-26 1996-09-11 Matsushita Electric Ind Co Ltd
DE19628949B4 (de) * 1995-02-02 2008-12-04 Muegge Electronic Gmbh Vorrichtung zur Erzeugung von Plasma
JPH11214196A (ja) * 1998-01-29 1999-08-06 Mitsubishi Electric Corp プラズマ発生装置
US6225592B1 (en) * 1998-09-15 2001-05-01 Astex-Plasmaquest, Inc. Method and apparatus for launching microwave energy into a plasma processing chamber
JP3645768B2 (ja) * 1999-12-07 2005-05-11 シャープ株式会社 プラズマプロセス装置
US7196283B2 (en) 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
US8048806B2 (en) 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US7141757B2 (en) * 2000-03-17 2006-11-28 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent
US6894245B2 (en) * 2000-03-17 2005-05-17 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US8617351B2 (en) 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US7220937B2 (en) * 2000-03-17 2007-05-22 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination
US6586886B1 (en) 2001-12-19 2003-07-01 Applied Materials, Inc. Gas distribution plate electrode for a plasma reactor
TWI283899B (en) 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
US7795153B2 (en) 2003-05-16 2010-09-14 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters
US7470626B2 (en) 2003-05-16 2008-12-30 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7452824B2 (en) 2003-05-16 2008-11-18 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters
US7901952B2 (en) 2003-05-16 2011-03-08 Applied Materials, Inc. Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters
US7247218B2 (en) 2003-05-16 2007-07-24 Applied Materials, Inc. Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power
US7910013B2 (en) 2003-05-16 2011-03-22 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
DE10358329B4 (de) 2003-12-12 2007-08-02 R3T Gmbh Rapid Reactive Radicals Technology Vorrichtung zur Erzeugung angeregter und/oder ionisierter Teilchen in einem Plasma und Verfahren zur Erzeugung ionisierter Teilchen
JP4109213B2 (ja) * 2004-03-31 2008-07-02 株式会社アドテック プラズマ テクノロジー 同軸形マイクロ波プラズマトーチ
US7359177B2 (en) * 2005-05-10 2008-04-15 Applied Materials, Inc. Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output
KR100856527B1 (ko) * 2006-11-07 2008-09-04 한국원자력연구원 대전류 수소음이온 인출장치 및 그 방법
JP4719184B2 (ja) * 2007-06-01 2011-07-06 株式会社サイアン 大気圧プラズマ発生装置およびそれを用いるワーク処理装置
DE112009001422T5 (de) * 2008-06-11 2011-06-01 Tohoku University, Sendai Plasma-Processing-Vorrichtung und Plasma-Vorrichtung-Verfahren
FR2993429B1 (fr) * 2012-07-11 2016-08-05 Centre Nat De La Rech Scient (Cnrs) Applicateur micro-onde coaxial pour la production de plasma
US11037764B2 (en) * 2017-05-06 2021-06-15 Applied Materials, Inc. Modular microwave source with local Lorentz force
US10504699B2 (en) 2018-04-20 2019-12-10 Applied Materials, Inc. Phased array modular high-frequency source
ES2696227B2 (es) * 2018-07-10 2019-06-12 Centro De Investig Energeticas Medioambientales Y Tecnologicas Ciemat Fuente de iones interna para ciclotrones de baja erosion
CN112996209B (zh) * 2021-05-07 2021-08-10 四川大学 一种微波激发常压等离子体射流的结构和阵列结构

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3137801A (en) * 1960-09-22 1964-06-16 High Voltage Engineering Corp Duoplasmatron-type ion source including a non-magnetic anode and magnetic extractor electrode
FR2147497A5 (de) * 1971-07-29 1973-03-09 Commissariat Energie Atomique
US3740554A (en) * 1972-04-13 1973-06-19 Atomic Energy Commission Multi-ampere duopigatron ion source
US3789414A (en) * 1972-07-19 1974-01-29 E Systems Inc Pendulum stabilization for antenna structure with padome
JPS5852297B2 (ja) * 1979-06-04 1983-11-21 株式会社日立製作所 マイクロ波イオン源
US4393333A (en) * 1979-12-10 1983-07-12 Hitachi, Ltd. Microwave plasma ion source
JPS5947421B2 (ja) * 1980-03-24 1984-11-19 株式会社日立製作所 マイクロ波イオン源
JPS5923432A (ja) * 1982-07-30 1984-02-06 Hitachi Ltd プラズマイオン源
JPH06105597B2 (ja) * 1982-08-30 1994-12-21 株式会社日立製作所 マイクロ波プラズマ源
JPS6043620B2 (ja) * 1982-11-25 1985-09-28 日新ハイボルテージ株式会社 マイクロ波イオン源
JPS59194407A (ja) * 1983-04-19 1984-11-05 Ulvac Corp 電子サイクロトロン共鳴形イオン源用磁石装置
JPS6037129A (ja) * 1983-08-10 1985-02-26 Hitachi Ltd 半導体製造装置
EP0154824B1 (de) * 1984-03-16 1991-09-18 Hitachi, Ltd. Ionenquelle
JPS60243955A (ja) * 1984-05-18 1985-12-03 Hitachi Ltd マイクロ波イオン源
JPH0616384B2 (ja) * 1984-06-11 1994-03-02 日本電信電話株式会社 マイクロ波イオン源
FR2583250B1 (fr) * 1985-06-07 1989-06-30 France Etat Procede et dispositif d'excitation d'un plasma par micro-ondes a la resonance cyclotronique electronique
JPS6276137A (ja) * 1985-09-30 1987-04-08 Hitachi Ltd イオン源
JPH0654644B2 (ja) * 1985-10-04 1994-07-20 株式会社日立製作所 イオン源
US4788473A (en) * 1986-06-20 1988-11-29 Fujitsu Limited Plasma generating device with stepped waveguide transition
US4911814A (en) * 1988-02-08 1990-03-27 Nippon Telegraph And Telephone Corporation Thin film forming apparatus and ion source utilizing sputtering with microwave plasma
US4883968A (en) * 1988-06-03 1989-11-28 Eaton Corporation Electron cyclotron resonance ion source

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10138693A1 (de) * 2001-08-07 2003-07-10 Schott Glas Vorrichtung zum Beschichten von Gegenständen
US7434537B2 (en) 2001-08-07 2008-10-14 Schott Ag Device for the coating of objects

Also Published As

Publication number Publication date
EP0334184A2 (de) 1989-09-27
US5053678A (en) 1991-10-01
DE68926923D1 (de) 1996-09-19
EP0334184A3 (en) 1989-11-29
EP0334184B1 (de) 1996-08-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee