DE3005049A1 - Verfahren zum ziehen eines kristallkoerpers aus einer schmelze, insbesondere fuer die herstellung von solarzellen, sowie kapillar-formgebungsteil hierfuer - Google Patents
Verfahren zum ziehen eines kristallkoerpers aus einer schmelze, insbesondere fuer die herstellung von solarzellen, sowie kapillar-formgebungsteil hierfuerInfo
- Publication number
- DE3005049A1 DE3005049A1 DE19803005049 DE3005049A DE3005049A1 DE 3005049 A1 DE3005049 A1 DE 3005049A1 DE 19803005049 DE19803005049 DE 19803005049 DE 3005049 A DE3005049 A DE 3005049A DE 3005049 A1 DE3005049 A1 DE 3005049A1
- Authority
- DE
- Germany
- Prior art keywords
- melt
- capillary
- shaping part
- face
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 53
- 238000000465 moulding Methods 0.000 title claims description 34
- 239000000155 melt Substances 0.000 title claims description 31
- 238000000034 method Methods 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000007493 shaping process Methods 0.000 claims description 88
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 229910052710 silicon Inorganic materials 0.000 claims description 48
- 239000010703 silicon Substances 0.000 claims description 48
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 38
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 36
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 26
- 229910002804 graphite Inorganic materials 0.000 claims description 22
- 239000010439 graphite Substances 0.000 claims description 22
- 230000005499 meniscus Effects 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 20
- 239000002245 particle Substances 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 17
- 238000009826 distribution Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 230000009471 action Effects 0.000 claims description 4
- 238000011109 contamination Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 240000007313 Tilia cordata Species 0.000 claims 1
- 230000007613 environmental effect Effects 0.000 claims 1
- 238000012423 maintenance Methods 0.000 claims 1
- 230000001376 precipitating effect Effects 0.000 claims 1
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 20
- 230000008569 process Effects 0.000 description 12
- 239000002904 solvent Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OWNRRUFOJXFKCU-UHFFFAOYSA-N Bromadiolone Chemical compound C=1C=C(C=2C=CC(Br)=CC=2)C=CC=1C(O)CC(C=1C(OC2=CC=CC=C2C=1O)=O)C1=CC=CC=C1 OWNRRUFOJXFKCU-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 210000003041 ligament Anatomy 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000000284 resting effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- NOQGZXFMHARMLW-UHFFFAOYSA-N Daminozide Chemical compound CN(C)NC(=O)CCC(O)=O NOQGZXFMHARMLW-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000289 melt material Substances 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- IHQKEDIOMGYHEB-UHFFFAOYSA-M sodium dimethylarsinate Chemical class [Na+].C[As](C)([O-])=O IHQKEDIOMGYHEB-UHFFFAOYSA-M 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/011,527 US4430305A (en) | 1979-02-12 | 1979-02-12 | Displaced capillary dies |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3005049A1 true DE3005049A1 (de) | 1980-08-21 |
| DE3005049C2 DE3005049C2 (US07935154-20110503-C00006.png) | 1990-01-18 |
Family
ID=21750772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803005049 Granted DE3005049A1 (de) | 1979-02-12 | 1980-02-11 | Verfahren zum ziehen eines kristallkoerpers aus einer schmelze, insbesondere fuer die herstellung von solarzellen, sowie kapillar-formgebungsteil hierfuer |
Country Status (10)
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IN158092B (US07935154-20110503-C00006.png) * | 1981-01-12 | 1986-08-30 | Mobil Solar Energy Corp | |
| US4330359A (en) * | 1981-02-10 | 1982-05-18 | Lovelace Alan M Administrator | Electromigration process for the purification of molten silicon during crystal growth |
| US4469552A (en) * | 1982-04-23 | 1984-09-04 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Process and apparatus for growing a crystal ribbon |
| DE3231268A1 (de) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen |
| DE3231267A1 (de) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen |
| DE3231326A1 (de) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen |
| FR2769639B1 (fr) * | 1997-10-10 | 1999-11-12 | Commissariat Energie Atomique | Filiere pour le tirage de cristaux a partir d'un bain fondu |
| CN102002754B (zh) * | 2010-12-28 | 2012-07-04 | 上海应用技术学院 | 硅酸铋闪烁晶体的定形提拉生长方法 |
| US9018101B2 (en) * | 2011-03-17 | 2015-04-28 | Georgia Tech Research Corporation | Patterned graphene structures on silicon carbide |
| CN102560630A (zh) * | 2012-01-12 | 2012-07-11 | 徐州协鑫光电科技有限公司 | 导模法同步生长多条晶体的热场及方法 |
| TWI479055B (zh) * | 2012-09-30 | 2015-04-01 | Saint Gobain Ceramics | 用於晶體生長之模具、裝置及方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4022652A (en) * | 1974-09-26 | 1977-05-10 | Tokyo Shibaura Electric Co., Ltd. | Method of growing multiple monocrystalline layers |
| US4099924A (en) * | 1977-03-16 | 1978-07-11 | Rca Corporation | Apparatus improvements for growing single crystalline silicon sheets |
| DE2704913A1 (de) * | 1977-01-11 | 1978-07-13 | Ugine Kuhlmann | Vorrichtung zur kontinuierlichen zuechtung von einkristallen in form von platten |
| DE2654945C2 (de) * | 1975-12-05 | 1986-04-10 | Mobil Solar Energy Corp., Waltham, Mass. | Auf dem EFG-Verfahren beruhendes Verfahren zur Herstellung von im wesentlichen ebenen, insbesondere im wesentlichen einkristallinen Bändern aus kristallinem Festkörpermaterial zur Verwendung für elektronische Festkörperanordnungen, insbesondere Halbleiterbauelemente und Solarzellen |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5342559A (en) * | 1976-09-29 | 1978-04-18 | Nec Corp | Production of semiconductor elements |
-
1979
- 1979-02-12 US US06/011,527 patent/US4430305A/en not_active Expired - Lifetime
-
1980
- 1980-01-25 IN IN53/DEL/80A patent/IN153781B/en unknown
- 1980-01-28 GB GB8002760A patent/GB2041781B/en not_active Expired
- 1980-01-31 IL IL59275A patent/IL59275A/xx unknown
- 1980-01-31 AU AU55083/80A patent/AU530159B2/en not_active Ceased
- 1980-02-11 NL NL8000851A patent/NL8000851A/nl not_active Application Discontinuation
- 1980-02-11 FR FR8002951A patent/FR2448586A1/fr active Granted
- 1980-02-11 DE DE19803005049 patent/DE3005049A1/de active Granted
- 1980-02-12 JP JP1590180A patent/JPS55109295A/ja active Pending
- 1980-02-12 CA CA000345437A patent/CA1142418A/en not_active Expired
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4022652A (en) * | 1974-09-26 | 1977-05-10 | Tokyo Shibaura Electric Co., Ltd. | Method of growing multiple monocrystalline layers |
| DE2654945C2 (de) * | 1975-12-05 | 1986-04-10 | Mobil Solar Energy Corp., Waltham, Mass. | Auf dem EFG-Verfahren beruhendes Verfahren zur Herstellung von im wesentlichen ebenen, insbesondere im wesentlichen einkristallinen Bändern aus kristallinem Festkörpermaterial zur Verwendung für elektronische Festkörperanordnungen, insbesondere Halbleiterbauelemente und Solarzellen |
| DE2704913A1 (de) * | 1977-01-11 | 1978-07-13 | Ugine Kuhlmann | Vorrichtung zur kontinuierlichen zuechtung von einkristallen in form von platten |
| US4099924A (en) * | 1977-03-16 | 1978-07-11 | Rca Corporation | Apparatus improvements for growing single crystalline silicon sheets |
Non-Patent Citations (3)
| Title |
|---|
| Englischsprachiger Abstract der JP 53-55 483 * |
| Englischsprachiger Abstract der JP 53-71 689 * |
| Englischsprachiger Abstract der JP 53-71 690 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US4430305A (en) | 1984-02-07 |
| AU5508380A (en) | 1980-08-21 |
| FR2448586B1 (US07935154-20110503-C00006.png) | 1984-12-07 |
| AU530159B2 (en) | 1983-07-07 |
| IL59275A (en) | 1983-03-31 |
| GB2041781B (en) | 1982-10-27 |
| NL8000851A (nl) | 1980-08-14 |
| DE3005049C2 (US07935154-20110503-C00006.png) | 1990-01-18 |
| IN153781B (US07935154-20110503-C00006.png) | 1984-08-18 |
| FR2448586A1 (fr) | 1980-09-05 |
| CA1142418A (en) | 1983-03-08 |
| GB2041781A (en) | 1980-09-17 |
| JPS55109295A (en) | 1980-08-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0165449B1 (de) | Verfahren zur Herstellung von Halbleiterfolien | |
| DE60038095T2 (de) | Verfahren zur Herstellung einer trägerfreien Kristallschicht | |
| DE3231090A1 (de) | Verfahren und apparatur zum ziehen eines kristallkoerpers aus einer schmelze | |
| DE2745335A1 (de) | Vorrichtung zum ziehen von einkristallinem silizium | |
| DE2243181B2 (de) | Verfahren zum herstellen epitaktischer halbleiterschichten aus der fluessigen phase | |
| DE3005049A1 (de) | Verfahren zum ziehen eines kristallkoerpers aus einer schmelze, insbesondere fuer die herstellung von solarzellen, sowie kapillar-formgebungsteil hierfuer | |
| DE2305019C3 (de) | Verfahren und Vorrichtung zum epitaktischen Aufwachsen von Halbleiterschichten mittels Flüssigphasen-Epitaxie | |
| DE3010557C2 (de) | Verfahren und Vorrichtung zum Herstellen von großflächigen Siliziumkörpern für Solarzellen | |
| DE3418370A1 (de) | Verfahren und apparatur zum ziehen von kristallkoerpern | |
| DE2620030C2 (de) | Verfahren zum Ziehen von Einkristallstäben oder -bändern | |
| DE3132621A1 (de) | Verfahren und vorrichtung zum ziehen eines einkristall-bandes aus einer schmelze | |
| DE2016101B2 (de) | Verfahren zum ziehen eines halbleiterstabes | |
| DE1298085B (de) | Verfahren zur Herstellung von Einkristallen hoher Kristallguete durch Zonenschmelzen | |
| DE2604351C3 (de) | Verfahren zur Herstellung von Halbleiteranordnungen, bei dem eine Siliciumschicht auf einem Substrat angebracht wird | |
| DE3017016A1 (de) | Verfahren und vorrichtung zur herstellung von monokristallinem silicium in bandform | |
| DE2635373C2 (de) | Verfahren und Vorrichtung zur kontinuierlichen Züchtung von Einkristallen bestimmter Form | |
| DE60017324T2 (de) | Verfahren zur Kristallzüchtung | |
| DE1519869B1 (de) | Verfahren zum Herstellen einer Faserstruktur in einem Koerper aus einer halbleitenden Verbindung | |
| DE2700994C2 (de) | Verfahren und Vorrichtung zum Ziehen von kristallinen Siliciumkörpern | |
| DE2632614A1 (de) | Vorrichtung zum ziehen eines einkristallinen koerpers aus einem schmelzfilm | |
| DE68912686T2 (de) | Verfahren zur Herstellung eines Einkristalls aus einer Halbleiter-Verbindung. | |
| DE2508651C3 (de) | Verfahren zur Herstellung eines ununterbrochenen kristallinen Bandes | |
| DE2339979C3 (de) | Verfahren und Vorrichtung zur Herstellung eines Metallgegenstandes | |
| DE3226931A1 (de) | Verfahren und vorrichtung zum herstellen von grossflaechigen, fuer die fertigung von solarzellen verwendbaren bandfoermigen siliziumkoerpern | |
| DE2649201C2 (de) | Verfahren zum Herstellen von einkristallinen Halbleitermaterialbändern durch senkrechtes Ziehen aus einem Schmelzfilm unter Verwendung eines Formgebungsteils |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8127 | New person/name/address of the applicant |
Owner name: MOBIL SOLAR ENERGY CORP., WALTHAM, MASS., US |
|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |