JPS55109295A - Growth of crystal body and its device - Google Patents

Growth of crystal body and its device

Info

Publication number
JPS55109295A
JPS55109295A JP1590180A JP1590180A JPS55109295A JP S55109295 A JPS55109295 A JP S55109295A JP 1590180 A JP1590180 A JP 1590180A JP 1590180 A JP1590180 A JP 1590180A JP S55109295 A JPS55109295 A JP S55109295A
Authority
JP
Japan
Prior art keywords
growth
crystal body
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1590180A
Other languages
English (en)
Inventor
Pii Keerujiyusu Jiyurisu
Chiyarumaasu Buruusu
Shiyuretsuku Toomasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott Solar CSP Inc
Original Assignee
Mobil Tyco Solar Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mobil Tyco Solar Energy Corp filed Critical Mobil Tyco Solar Energy Corp
Publication of JPS55109295A publication Critical patent/JPS55109295A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
JP1590180A 1979-02-12 1980-02-12 Growth of crystal body and its device Pending JPS55109295A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/011,527 US4430305A (en) 1979-02-12 1979-02-12 Displaced capillary dies

Publications (1)

Publication Number Publication Date
JPS55109295A true JPS55109295A (en) 1980-08-22

Family

ID=21750772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1590180A Pending JPS55109295A (en) 1979-02-12 1980-02-12 Growth of crystal body and its device

Country Status (10)

Country Link
US (1) US4430305A (ja)
JP (1) JPS55109295A (ja)
AU (1) AU530159B2 (ja)
CA (1) CA1142418A (ja)
DE (1) DE3005049A1 (ja)
FR (1) FR2448586A1 (ja)
GB (1) GB2041781B (ja)
IL (1) IL59275A (ja)
IN (1) IN153781B (ja)
NL (1) NL8000851A (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN158092B (ja) * 1981-01-12 1986-08-30 Mobil Solar Energy Corp
US4330359A (en) * 1981-02-10 1982-05-18 Lovelace Alan M Administrator Electromigration process for the purification of molten silicon during crystal growth
US4469552A (en) * 1982-04-23 1984-09-04 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Process and apparatus for growing a crystal ribbon
DE3231268A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen
DE3231267A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen
DE3231326A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
FR2769639B1 (fr) 1997-10-10 1999-11-12 Commissariat Energie Atomique Filiere pour le tirage de cristaux a partir d'un bain fondu
CN102002754B (zh) * 2010-12-28 2012-07-04 上海应用技术学院 硅酸铋闪烁晶体的定形提拉生长方法
WO2012125898A1 (en) * 2011-03-17 2012-09-20 Georgia Tech Research Corporation Patterned graphene structures on silicon carbide
CN102560630A (zh) * 2012-01-12 2012-07-11 徐州协鑫光电科技有限公司 导模法同步生长多条晶体的热场及方法
TWI479055B (zh) * 2012-09-30 2015-04-01 Saint Gobain Ceramics 用於晶體生長之模具、裝置及方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342559A (en) * 1976-09-29 1978-04-18 Nec Corp Production of semiconductor elements

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS535994B2 (ja) * 1974-09-26 1978-03-03
US4036666A (en) * 1975-12-05 1977-07-19 Mobil Tyco Solar Energy Corporation Manufacture of semiconductor ribbon
FR2376697A2 (fr) * 1977-01-11 1978-08-04 Ugine Kuhlmann Dispositif de fabrication en continu de monocristaux preformes en forme de plaques
US4099924A (en) * 1977-03-16 1978-07-11 Rca Corporation Apparatus improvements for growing single crystalline silicon sheets

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342559A (en) * 1976-09-29 1978-04-18 Nec Corp Production of semiconductor elements

Also Published As

Publication number Publication date
FR2448586B1 (ja) 1984-12-07
US4430305A (en) 1984-02-07
CA1142418A (en) 1983-03-08
FR2448586A1 (fr) 1980-09-05
AU530159B2 (en) 1983-07-07
IN153781B (ja) 1984-08-18
IL59275A (en) 1983-03-31
GB2041781A (en) 1980-09-17
AU5508380A (en) 1980-08-21
DE3005049A1 (de) 1980-08-21
GB2041781B (en) 1982-10-27
NL8000851A (nl) 1980-08-14
DE3005049C2 (ja) 1990-01-18

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