NL8000851A - Werkwijze en inrichting om kristallen te vervaardigen. - Google Patents
Werkwijze en inrichting om kristallen te vervaardigen. Download PDFInfo
- Publication number
- NL8000851A NL8000851A NL8000851A NL8000851A NL8000851A NL 8000851 A NL8000851 A NL 8000851A NL 8000851 A NL8000851 A NL 8000851A NL 8000851 A NL8000851 A NL 8000851A NL 8000851 A NL8000851 A NL 8000851A
- Authority
- NL
- Netherlands
- Prior art keywords
- capillary
- die
- mold
- melt
- top surface
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims description 47
- 238000000034 method Methods 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 53
- 229910052710 silicon Inorganic materials 0.000 claims description 53
- 239000010703 silicon Substances 0.000 claims description 53
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 39
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 38
- 230000012010 growth Effects 0.000 claims description 29
- 239000000155 melt Substances 0.000 claims description 27
- 230000005499 meniscus Effects 0.000 claims description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 25
- 229910002804 graphite Inorganic materials 0.000 claims description 21
- 239000010439 graphite Substances 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 19
- 239000012535 impurity Substances 0.000 claims description 18
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000002244 precipitate Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 11
- 238000009826 distribution Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000001627 detrimental effect Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000012768 molten material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000007773 growth pattern Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000951490 Hylocharis chrysura Species 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000009028 cell transition Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052909 inorganic silicate Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1152779 | 1979-02-12 | ||
| US06/011,527 US4430305A (en) | 1979-02-12 | 1979-02-12 | Displaced capillary dies |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8000851A true NL8000851A (nl) | 1980-08-14 |
Family
ID=21750772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8000851A NL8000851A (nl) | 1979-02-12 | 1980-02-11 | Werkwijze en inrichting om kristallen te vervaardigen. |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4430305A (ja) |
| JP (1) | JPS55109295A (ja) |
| AU (1) | AU530159B2 (ja) |
| CA (1) | CA1142418A (ja) |
| DE (1) | DE3005049A1 (ja) |
| FR (1) | FR2448586A1 (ja) |
| GB (1) | GB2041781B (ja) |
| IL (1) | IL59275A (ja) |
| IN (1) | IN153781B (ja) |
| NL (1) | NL8000851A (ja) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IN158092B (ja) * | 1981-01-12 | 1986-08-30 | Mobil Solar Energy Corp | |
| US4330359A (en) * | 1981-02-10 | 1982-05-18 | Lovelace Alan M Administrator | Electromigration process for the purification of molten silicon during crystal growth |
| US4469552A (en) * | 1982-04-23 | 1984-09-04 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Process and apparatus for growing a crystal ribbon |
| DE3231268A1 (de) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen |
| DE3231267A1 (de) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen |
| DE3231326A1 (de) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen |
| FR2769639B1 (fr) * | 1997-10-10 | 1999-11-12 | Commissariat Energie Atomique | Filiere pour le tirage de cristaux a partir d'un bain fondu |
| CN102002754B (zh) * | 2010-12-28 | 2012-07-04 | 上海应用技术学院 | 硅酸铋闪烁晶体的定形提拉生长方法 |
| WO2012125898A1 (en) * | 2011-03-17 | 2012-09-20 | Georgia Tech Research Corporation | Patterned graphene structures on silicon carbide |
| CN102560630A (zh) * | 2012-01-12 | 2012-07-11 | 徐州协鑫光电科技有限公司 | 导模法同步生长多条晶体的热场及方法 |
| TWI479055B (zh) * | 2012-09-30 | 2015-04-01 | Saint Gobain Ceramics | 用於晶體生長之模具、裝置及方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS535994B2 (ja) * | 1974-09-26 | 1978-03-03 | ||
| US4036666A (en) * | 1975-12-05 | 1977-07-19 | Mobil Tyco Solar Energy Corporation | Manufacture of semiconductor ribbon |
| JPS5342559A (en) * | 1976-09-29 | 1978-04-18 | Nec Corp | Production of semiconductor elements |
| FR2376697A2 (fr) * | 1977-01-11 | 1978-08-04 | Ugine Kuhlmann | Dispositif de fabrication en continu de monocristaux preformes en forme de plaques |
| US4099924A (en) * | 1977-03-16 | 1978-07-11 | Rca Corporation | Apparatus improvements for growing single crystalline silicon sheets |
-
1979
- 1979-02-12 US US06/011,527 patent/US4430305A/en not_active Expired - Lifetime
-
1980
- 1980-01-25 IN IN53/DEL/80A patent/IN153781B/en unknown
- 1980-01-28 GB GB8002760A patent/GB2041781B/en not_active Expired
- 1980-01-31 AU AU55083/80A patent/AU530159B2/en not_active Ceased
- 1980-01-31 IL IL59275A patent/IL59275A/xx unknown
- 1980-02-11 DE DE19803005049 patent/DE3005049A1/de active Granted
- 1980-02-11 FR FR8002951A patent/FR2448586A1/fr active Granted
- 1980-02-11 NL NL8000851A patent/NL8000851A/nl not_active Application Discontinuation
- 1980-02-12 CA CA000345437A patent/CA1142418A/en not_active Expired
- 1980-02-12 JP JP1590180A patent/JPS55109295A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| AU530159B2 (en) | 1983-07-07 |
| GB2041781B (en) | 1982-10-27 |
| IN153781B (ja) | 1984-08-18 |
| CA1142418A (en) | 1983-03-08 |
| US4430305A (en) | 1984-02-07 |
| GB2041781A (en) | 1980-09-17 |
| DE3005049C2 (ja) | 1990-01-18 |
| FR2448586B1 (ja) | 1984-12-07 |
| JPS55109295A (en) | 1980-08-22 |
| AU5508380A (en) | 1980-08-21 |
| DE3005049A1 (de) | 1980-08-21 |
| FR2448586A1 (fr) | 1980-09-05 |
| IL59275A (en) | 1983-03-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| LaBelle Jr | EFG, the invention and application to sapphire growth | |
| US4661200A (en) | String stabilized ribbon growth | |
| US4329195A (en) | Lateral pulling growth of crystal ribbons | |
| US5102494A (en) | Wet-tip die for EFG cyrstal growth apparatus | |
| US4447289A (en) | Process for the manufacture of coarsely crystalline to monocrystalline sheets of semiconductor material | |
| US4075055A (en) | Method and apparatus for forming an elongated silicon crystalline body using a <110>{211}orientated seed crystal | |
| US7682452B2 (en) | Apparatus and methods of growing void-free crystalline ceramic products | |
| NL8000851A (nl) | Werkwijze en inrichting om kristallen te vervaardigen. | |
| EP0368586B1 (en) | Apparatus for manufacturing silicon single crystals | |
| Pollock | Filamentary sapphire: Part 1 Growth and microstructural characterisation | |
| NL8203116A (nl) | Werkwijze en apparaat voor het doen groeien van langgerekte kristallijne lichamen uit een smelt voor de vervaardiging van fotogalvanische zonnecellen. | |
| US4415401A (en) | Control of atmosphere surrounding crystal growth zone | |
| CA1081586A (en) | Method and apparatus for forming silicon crystalline bodies | |
| EP0340941A1 (en) | Method and apparatus for manufacturing silicon single crystals | |
| US5370078A (en) | Method and apparatus for crystal growth with shape and segregation control | |
| AU643798B2 (en) | Wet-tip die for EFG crystal growth apparatus | |
| US5114528A (en) | Edge-defined contact heater apparatus and method for floating zone crystal growth | |
| CA1172146A (en) | Method and apparatus for drawing monocrystalline ribbon from a melt | |
| US4157373A (en) | Apparatus for the production of ribbon shaped crystals | |
| JPS6140897A (ja) | リボン状シリコン結晶の製造方法と装置 | |
| US4721688A (en) | Method of growing crystals | |
| US4239734A (en) | Method and apparatus for forming silicon crystalline bodies | |
| US4353757A (en) | Displaced capillary dies | |
| US4304623A (en) | Method for forming silicon crystalline bodies | |
| JP3668276B2 (ja) | 酸化物単結晶の製造方法および装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| DNT | Communications of changes of names of applicants whose applications have been laid open to public inspection |
Free format text: MOBIL SOLAR ENERGY CORPORATION |
|
| A85 | Still pending on 85-01-01 | ||
| BC | A request for examination has been filed | ||
| BV | The patent application has lapsed |