DE3004710C2 - Verfahren und Vorrichtung zum Aufwachsen einer epitaktischen Schicht auf einem Scheibchen - Google Patents

Verfahren und Vorrichtung zum Aufwachsen einer epitaktischen Schicht auf einem Scheibchen

Info

Publication number
DE3004710C2
DE3004710C2 DE3004710A DE3004710A DE3004710C2 DE 3004710 C2 DE3004710 C2 DE 3004710C2 DE 3004710 A DE3004710 A DE 3004710A DE 3004710 A DE3004710 A DE 3004710A DE 3004710 C2 DE3004710 C2 DE 3004710C2
Authority
DE
Germany
Prior art keywords
wafer
reflector
coil
vessel
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3004710A
Other languages
German (de)
English (en)
Other versions
DE3004710A1 (de
Inventor
Dennis Dix Hills N.Y. Garbis
Robert Levittown N.Y. Heller
Lawrence Short Hills N.J. Hill
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Semiconductor Inc
Original Assignee
General Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Instrument Corp filed Critical General Instrument Corp
Publication of DE3004710A1 publication Critical patent/DE3004710A1/de
Application granted granted Critical
Publication of DE3004710C2 publication Critical patent/DE3004710C2/de
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/12Substrate holders or susceptors
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/10Heating of the reaction chamber or the substrate
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/10Heating of the reaction chamber or the substrate
    • C30B25/105Heating of the reaction chamber or the substrate by irradiation or electric discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE3004710A 1979-02-09 1980-02-08 Verfahren und Vorrichtung zum Aufwachsen einer epitaktischen Schicht auf einem Scheibchen Expired DE3004710C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/010,746 US4284867A (en) 1979-02-09 1979-02-09 Chemical vapor deposition reactor with infrared reflector

Publications (2)

Publication Number Publication Date
DE3004710A1 DE3004710A1 (de) 1980-09-04
DE3004710C2 true DE3004710C2 (de) 1987-02-19

Family

ID=21747201

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3004710A Expired DE3004710C2 (de) 1979-02-09 1980-02-08 Verfahren und Vorrichtung zum Aufwachsen einer epitaktischen Schicht auf einem Scheibchen

Country Status (3)

Country Link
US (1) US4284867A (US06252093-20010626-C00008.png)
JP (1) JPS5927755B2 (US06252093-20010626-C00008.png)
DE (1) DE3004710C2 (US06252093-20010626-C00008.png)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4579080A (en) * 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
US4858557A (en) * 1984-07-19 1989-08-22 L.P.E. Spa Epitaxial reactors
IT1209570B (it) * 1984-07-19 1989-08-30 Lpe Spa Perfezionamento nei reattori epitassiali.
US5259883A (en) * 1988-02-16 1993-11-09 Kabushiki Kaisha Toshiba Method of thermally processing semiconductor wafers and an apparatus therefor
TW289839B (US06252093-20010626-C00008.png) * 1993-02-09 1996-11-01 Gen Instrument Corp
IT1271233B (it) * 1994-09-30 1997-05-27 Lpe Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati
US6666924B1 (en) 2000-03-28 2003-12-23 Asm America Reaction chamber with decreased wall deposition
US6564810B1 (en) 2000-03-28 2003-05-20 Asm America Cleaning of semiconductor processing chambers
KR20030059745A (ko) * 2002-01-04 2003-07-10 주성엔지니어링(주) 반사기를 이용한 웨이퍼 온도 보상기
JP2006021978A (ja) * 2004-07-09 2006-01-26 Sumitomo Electric Ind Ltd ガラス体の加熱装置及びこれを用いた光ファイバ母材の製造方法
US8186301B2 (en) * 2005-05-27 2012-05-29 Kirin Beer Kabushiki Kaisha Apparatus for manufacturing gas barrier plastic container, method for manufacturing the container, and the container
DE502005001749D1 (de) * 2005-07-28 2007-11-29 Applied Materials Gmbh & Co Kg Bedampfervorrichtung
EP1752555A1 (de) * 2005-07-28 2007-02-14 Applied Materials GmbH & Co. KG Verdampfervorrichtung
US8104951B2 (en) * 2006-07-31 2012-01-31 Applied Materials, Inc. Temperature uniformity measurements during rapid thermal processing
US8975505B2 (en) * 2009-09-28 2015-03-10 Daniel Ray Ladner Concentrated solar thermoelectric power system and numerical design model

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1900116A1 (de) * 1969-01-02 1970-08-06 Siemens Ag Verfahren zum epitaktischen Abscheiden von Silicium bei niedrigen Temperaturen
DE2211795A1 (de) * 1971-03-12 1972-10-05 Unisearch Ltd Ofen zur Herstellung von Planar-Transi stören und integrierten Schaltungen
JPS5319131A (en) * 1976-08-06 1978-02-22 Mitsubishi Metal Corp Cu alloy for base material of composite electric contact

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL72675C (US06252093-20010626-C00008.png) * 1949-09-10
US3067278A (en) * 1959-10-30 1962-12-04 Ite Circuit Breaker Ltd Liquid cooled metal enclosed isolated phase bus
US3160517A (en) * 1961-11-13 1964-12-08 Union Carbide Corp Method of depositing metals and metallic compounds throughout the pores of a porous body
US3301213A (en) * 1962-10-23 1967-01-31 Ibm Epitaxial reactor apparatus
US3699298A (en) * 1971-12-23 1972-10-17 Western Electric Co Methods and apparatus for heating and/or coating articles
US3845738A (en) * 1973-09-12 1974-11-05 Rca Corp Vapor deposition apparatus with pyrolytic graphite heat shield
US4115163A (en) * 1976-01-08 1978-09-19 Yulia Ivanovna Gorina Method of growing epitaxial semiconductor films utilizing radiant heating

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1900116A1 (de) * 1969-01-02 1970-08-06 Siemens Ag Verfahren zum epitaktischen Abscheiden von Silicium bei niedrigen Temperaturen
DE2211795A1 (de) * 1971-03-12 1972-10-05 Unisearch Ltd Ofen zur Herstellung von Planar-Transi stören und integrierten Schaltungen
JPS5319131A (en) * 1976-08-06 1978-02-22 Mitsubishi Metal Corp Cu alloy for base material of composite electric contact

Also Published As

Publication number Publication date
JPS5927755B2 (ja) 1984-07-07
US4284867A (en) 1981-08-18
DE3004710A1 (de) 1980-09-04
JPS55109297A (en) 1980-08-22

Similar Documents

Publication Publication Date Title
DE3004710C2 (de) Verfahren und Vorrichtung zum Aufwachsen einer epitaktischen Schicht auf einem Scheibchen
EP0265797B1 (de) Synchrotron
DE3207250C2 (US06252093-20010626-C00008.png)
EP0128600A2 (de) Kalter Tiegel für das Erschmelzen und die Kristallisation nichtmetallischer anorganischer Verbindungen
DE69114652T2 (de) Mikrowellenofen mit Bräunungsgerät.
DE1937726A1 (de) Verfahren zum Erwaermen von Essensportionen und Vorrichtung zur Durchfuehrung des Verfahrens
DE4204938C1 (US06252093-20010626-C00008.png)
DE69706996T2 (de) Induktionsofen zum schmelzen von glas unter verwendung eines kalten tiegels
DE1941254B2 (de) Verfahren und vorrichtung zum vakuumbedampfen einer traegeroberflaeche
DE2812311C2 (de) Verfahren zum gleichzeitigen Vakuumaufdampfen dünner Schichten auf mehrere Substrate mittels Elektronenstrahlen und Anwendung auf die Bedampfung von Turbinenschaufeln
DE1621394A1 (de) Verfahren und Vorrichtung zum Erhitzen und/oder Beschichten von Werkstuecken
DE3639760C2 (US06252093-20010626-C00008.png)
DE2607141C2 (de) Verfahren zur Verbesserung der Beständigkeit eines langgestreckten Gegenstandes aus einer Zirkonlegierung
DE19609690C2 (de) Turbinenschaufel
DE2846338A1 (de) Kochtopf o.dgl.
DE1596602C3 (de) Gerat zur Steuerung der Bewegung des geschmolzenen Metalls bei der Her stellung von Flachglas nach dem Float glas Verfahren
DE2852440C3 (de) Verfahren zur Herstellung eines Eingangsbildschirms für einen Bildverstärker
DE68919743T2 (de) Schutzvorrichtung für Induktionspole und Induktor, welcher mit solch einer Vorrichtung versehen ist.
DE2449225C3 (de) Verdampfungstiegel für Vakuumbedampfungs anlagen
DE102004028714A1 (de) Thermische Behandlungsvorrichtung
DE1800307B1 (de) Verfahren zur Herstellung eines metallischen Mehrschichtenverbundrohres
EP0252279A2 (de) Verfahren und Vorrichtung zum Abtrennen von für Solarzellen verwendbaren scheibenförmigen Siliziumkörpern von einem nach dem sogenannten horizontalen Bandziehverfahren hergestellten Siliziumband
EP0020395A1 (de) Verfahren zum herstellen von halbleiterbauelementen
DE1000657B (de) Verfahren und Vorrichtung zur Durchfuehrung technischer Prozesse mittels Glimmentladung
DE1619998B2 (de) Vorrichtung zum thermischen behandeln von scheibenfoermigen halbleiterkoerpern

Legal Events

Date Code Title Description
OD Request for examination
D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: GENERAL SEMICONDUCTOR, INC., MELVILLE, N.Y., US