DE2917082C2 - - Google Patents

Info

Publication number
DE2917082C2
DE2917082C2 DE2917082A DE2917082A DE2917082C2 DE 2917082 C2 DE2917082 C2 DE 2917082C2 DE 2917082 A DE2917082 A DE 2917082A DE 2917082 A DE2917082 A DE 2917082A DE 2917082 C2 DE2917082 C2 DE 2917082C2
Authority
DE
Germany
Prior art keywords
gate electrode
field effect
semiconductor
effect transistor
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2917082A
Other languages
German (de)
English (en)
Other versions
DE2917082A1 (de
Inventor
Heinz Prof.Dr.Rer.Nat. 5100 Aachen De Beneking
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Telefunken Electronic GmbH
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Electronic GmbH, Licentia Patent Verwaltungs GmbH filed Critical Telefunken Electronic GmbH
Priority to DE19792917082 priority Critical patent/DE2917082A1/de
Publication of DE2917082A1 publication Critical patent/DE2917082A1/de
Application granted granted Critical
Publication of DE2917082C2 publication Critical patent/DE2917082C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE19792917082 1979-04-27 1979-04-27 Feldeffekttransistor Granted DE2917082A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19792917082 DE2917082A1 (de) 1979-04-27 1979-04-27 Feldeffekttransistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792917082 DE2917082A1 (de) 1979-04-27 1979-04-27 Feldeffekttransistor

Publications (2)

Publication Number Publication Date
DE2917082A1 DE2917082A1 (de) 1980-11-06
DE2917082C2 true DE2917082C2 (Sortimente) 1988-07-21

Family

ID=6069407

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19792917082 Granted DE2917082A1 (de) 1979-04-27 1979-04-27 Feldeffekttransistor

Country Status (1)

Country Link
DE (1) DE2917082A1 (Sortimente)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4494016A (en) * 1982-07-26 1985-01-15 Sperry Corporation High performance MESFET transistor for VLSI implementation
US4558509A (en) * 1984-06-29 1985-12-17 International Business Machines Corporation Method for fabricating a gallium arsenide semiconductor device

Also Published As

Publication number Publication date
DE2917082A1 (de) 1980-11-06

Similar Documents

Publication Publication Date Title
DE3853778T2 (de) Verfahren zur Herstellung eines Halbleiterbauelements.
EP0879481B1 (de) Durch feldeffekt steuerbares halbleiterbauelement
DE69119820T2 (de) Halbleiteranordnung mit verringten zeitabhängigen dielektrischen Fehlern
DE3011982C2 (Sortimente)
DE3901369A1 (de) Verfahren zur herstellung einer doppelt diffundierten metall-oxid-halbleiter-feldeffekt-transistorvorrichtung sowie durch dieses verfahren hergestellte vorrichtung
DE19744687A1 (de) Feldeffekttransistor und Herstellungsverfahren desselben
DE3326534A1 (de) Schottkybarrieren-mos-bauelemente
DE2655998C2 (de) Isolierschicht-Feldeffekttransistor mit zusammengesetztem Kanal und Verfahren zu seiner Herstellung
DE2547828B2 (de) Verfahren zur Herstellung eines Speicherelements mit einem Doppelgate-Isolierschicht-Feldeffekttransistor
DE1965799C3 (de) Verfahren zur Herstellung eines Halbleiterbauelementes
DE19640561A1 (de) Darin beabstandete epitaktische Sperrschichtfeldeffekttransistorbereiche ausweisende Isolierschichthalbleitervorrichtngen und ihre Herstellungsverfahren
DE2419019C3 (de) Verfahren zum Herstellen eines Sperrschichtfeldeffekttransistors
DE2160462C2 (de) Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE2432352C3 (de) MNOS-Halbleiterspeicherelement
DE19947020A1 (de) Kompensationsbauelement mit variabler Ladungsbilanz
DE102017201550B4 (de) Siliciumcarbid-halbleitervorrichtung und verfahren zum herstellen einer siliciumcarbid-halbleitervorrichtung
DE1614300B2 (de) Feldeffekttransistor mit isolierter Steuerelektrode
DE19818518C2 (de) Halbleitervorrichtung und Verfahren zu deren Herstellung
DE3650573T2 (de) Leitfähigkeitsmodulations-Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE3427293A1 (de) Vertikale mosfet-einrichtung
DE2500235C2 (de) Ein-PN-Übergang-Planartransistor
DE69025784T2 (de) Nichtflüchtige Speicher-Halbleiteranordnung
DE3408285C2 (Sortimente)
DE2917082C2 (Sortimente)
DE112006002377B4 (de) Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung

Legal Events

Date Code Title Description
OAM Search report available
OC Search report available
8127 New person/name/address of the applicant

Owner name: LICENTIA PATENT-VERWALTUNGS-GMBH, 6000 FRANKFURT,

8120 Willingness to grant licences paragraph 23
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee