DE2909996C2 - Nur-Lese-Speicher und Verfahren zu seiner Herstellung - Google Patents

Nur-Lese-Speicher und Verfahren zu seiner Herstellung

Info

Publication number
DE2909996C2
DE2909996C2 DE2909996A DE2909996A DE2909996C2 DE 2909996 C2 DE2909996 C2 DE 2909996C2 DE 2909996 A DE2909996 A DE 2909996A DE 2909996 A DE2909996 A DE 2909996A DE 2909996 C2 DE2909996 C2 DE 2909996C2
Authority
DE
Germany
Prior art keywords
insulating film
read
openings
film
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2909996A
Other languages
German (de)
English (en)
Other versions
DE2909996A1 (de
Inventor
Yasushi Okuyama
Tsuyoshi Kumamoto Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Publication of DE2909996A1 publication Critical patent/DE2909996A1/de
Application granted granted Critical
Publication of DE2909996C2 publication Critical patent/DE2909996C2/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE2909996A 1978-03-14 1979-03-14 Nur-Lese-Speicher und Verfahren zu seiner Herstellung Expired DE2909996C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2961678A JPS54121685A (en) 1978-03-14 1978-03-14 Ic and method of fabricating same

Publications (2)

Publication Number Publication Date
DE2909996A1 DE2909996A1 (de) 1979-09-27
DE2909996C2 true DE2909996C2 (de) 1984-05-10

Family

ID=12280998

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2909996A Expired DE2909996C2 (de) 1978-03-14 1979-03-14 Nur-Lese-Speicher und Verfahren zu seiner Herstellung

Country Status (3)

Country Link
US (1) US4255210A (enExample)
JP (1) JPS54121685A (enExample)
DE (1) DE2909996C2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030170A (ja) * 1983-07-29 1985-02-15 Hitachi Ltd 高集積読み出し専用メモリ
JPS60163455A (ja) * 1984-02-03 1985-08-26 Toshiba Corp 読み出し専用記憶装置及びその製造方法
US5200355A (en) * 1990-12-10 1993-04-06 Samsung Electronics Co., Ltd. Method for manufacturing a mask read only memory device
TW287313B (enExample) * 1995-02-20 1996-10-01 Matsushita Electric Industrial Co Ltd
TW313706B (en) * 1997-01-10 1997-08-21 United Microelectronics Corp Read only memory structure and manufacturing method thereof
US5956610A (en) * 1997-05-22 1999-09-21 Advanced Micro Devices, Inc. Method and system for providing electrical insulation for local interconnect in a logic circuit
KR100301801B1 (ko) * 1997-12-30 2001-10-27 김영환 마스크롬 셀의 제조방법
DE10045192A1 (de) * 2000-09-13 2002-04-04 Siemens Ag Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers
JP2002343893A (ja) * 2001-05-15 2002-11-29 Sanyo Electric Co Ltd 半導体装置の製造方法
US8320153B2 (en) 2008-06-20 2012-11-27 Infineon Technologies Ag Semiconductor device and method for making same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode
US3756876A (en) * 1970-10-27 1973-09-04 Cogar Corp Fabrication process for field effect and bipolar transistor devices
US3914855A (en) * 1974-05-09 1975-10-28 Bell Telephone Labor Inc Methods for making MOS read-only memories
JPS605062B2 (ja) * 1974-09-26 1985-02-08 株式会社東芝 半導体論理回路装置
JPS51111020A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Semiconductor fixing memory equipment
JPS5232270A (en) * 1975-09-05 1977-03-11 Hitachi Ltd Passivation film formaion by sputtering

Also Published As

Publication number Publication date
JPS6237533B2 (enExample) 1987-08-13
DE2909996A1 (de) 1979-09-27
US4255210A (en) 1981-03-10
JPS54121685A (en) 1979-09-20

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Legal Events

Date Code Title Description
OAR Request for search filed
OB Request for examination as to novelty
OC Search report available
OD Request for examination
8125 Change of the main classification

Ipc: G11C 17/06

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee