DE2903651C2 - Festkörper-Bildabtastvorrichtung - Google Patents
Festkörper-BildabtastvorrichtungInfo
- Publication number
- DE2903651C2 DE2903651C2 DE2903651A DE2903651A DE2903651C2 DE 2903651 C2 DE2903651 C2 DE 2903651C2 DE 2903651 A DE2903651 A DE 2903651A DE 2903651 A DE2903651 A DE 2903651A DE 2903651 C2 DE2903651 C2 DE 2903651C2
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- state image
- solid
- layer
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007787 solid Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 238000012546 transfer Methods 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 4
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 238000000889 atomisation Methods 0.000 claims 1
- 210000004027 cell Anatomy 0.000 claims 1
- 210000000352 storage cell Anatomy 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000003595 spectral effect Effects 0.000 description 10
- 230000000903 blocking effect Effects 0.000 description 8
- 230000005669 field effect Effects 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229910004613 CdTe Inorganic materials 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005243 fluidization Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53010110A JPS5846066B2 (ja) | 1978-01-31 | 1978-01-31 | 光電変換装置 |
| JP53010987A JPS6042666B2 (ja) | 1978-02-01 | 1978-02-01 | 固体撮像装置 |
| JP53074445A JPS6055992B2 (ja) | 1978-06-19 | 1978-06-19 | 光導電素子 |
| JP7444678A JPS551152A (en) | 1978-06-19 | 1978-06-19 | Method of fabricating photoconducting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2903651A1 DE2903651A1 (de) | 1979-08-02 |
| DE2903651C2 true DE2903651C2 (de) | 1982-06-16 |
Family
ID=27455325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2903651A Expired DE2903651C2 (de) | 1978-01-31 | 1979-01-31 | Festkörper-Bildabtastvorrichtung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4236829A (OSRAM) |
| DE (1) | DE2903651C2 (OSRAM) |
| FR (1) | FR2416554A1 (OSRAM) |
| GB (1) | GB2014783B (OSRAM) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6033342B2 (ja) * | 1979-06-04 | 1985-08-02 | 株式会社日立製作所 | 固体撮像装置 |
| JPS5670673A (en) * | 1979-11-14 | 1981-06-12 | Hitachi Ltd | Photoelectric converter |
| EP0029367B1 (en) * | 1979-11-16 | 1986-03-05 | Matsushita Electric Industrial Co., Ltd. | Solid state imaging apparatus |
| US4500924A (en) * | 1979-11-16 | 1985-02-19 | Matsushita Electric Industrial Co., Ltd. | Solid state imaging apparatus |
| JPS5689174A (en) * | 1979-12-21 | 1981-07-20 | Toshiba Corp | Solid image pickup device |
| JPS56103578A (en) * | 1980-01-23 | 1981-08-18 | Hitachi Ltd | Solid state pickup element |
| JPS56165473A (en) * | 1980-05-24 | 1981-12-19 | Semiconductor Res Found | Semiconductor pickup device |
| US4568960A (en) * | 1980-10-23 | 1986-02-04 | Rockwell International Corporation | Blocked impurity band detectors |
| US4412900A (en) * | 1981-03-13 | 1983-11-01 | Hitachi, Ltd. | Method of manufacturing photosensors |
| DE3280262D1 (de) * | 1981-05-25 | 1990-11-29 | Toshiba Kawasaki Kk | Festkoerper-bildsensor. |
| JPS5831670A (ja) * | 1981-08-20 | 1983-02-24 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
| US4571626A (en) * | 1981-09-17 | 1986-02-18 | Matsushita Electric Industrial Co., Ltd. | Solid state area imaging apparatus |
| US4507674A (en) * | 1982-06-07 | 1985-03-26 | Hughes Aircraft Company | Backside illuminated blocked impurity band infrared detector |
| JPS58221562A (ja) * | 1982-06-18 | 1983-12-23 | Fuji Xerox Co Ltd | 原稿読取装置 |
| JPS59107569A (ja) * | 1982-12-13 | 1984-06-21 | Fuji Photo Film Co Ltd | 一次元半導体撮像装置 |
| JPS59108476A (ja) * | 1982-12-14 | 1984-06-22 | Junichi Nishizawa | ２次元固体撮像装置及びその読出し方法 |
| JPS59198084A (ja) * | 1983-04-26 | 1984-11-09 | Toshiba Corp | 固体撮像装置の残像抑制方式 |
| JPS6118183A (ja) * | 1984-07-04 | 1986-01-27 | Fuji Photo Film Co Ltd | 固体光検出デバイス |
| US4694317A (en) * | 1984-10-22 | 1987-09-15 | Fuji Photo Film Co., Ltd. | Solid state imaging device and process for fabricating the same |
| EP0186162B1 (en) * | 1984-12-24 | 1989-05-31 | Kabushiki Kaisha Toshiba | Solid state image sensor |
| US4789645A (en) * | 1987-04-20 | 1988-12-06 | Eaton Corporation | Method for fabrication of monolithic integrated circuits |
| US4912537A (en) * | 1988-06-24 | 1990-03-27 | Polaroid Corporation | Image sensing array with charge isolation |
| US5396103A (en) * | 1991-05-15 | 1995-03-07 | Minnesota Mining And Manufacturing Company | Graded composition ohmic contact for P-type II-VI semiconductors |
| US7253109B2 (en) | 1997-11-26 | 2007-08-07 | Applied Materials, Inc. | Method of depositing a tantalum nitride/tantalum diffusion barrier layer system |
| US6911124B2 (en) * | 1998-09-24 | 2005-06-28 | Applied Materials, Inc. | Method of depositing a TaN seed layer |
| JP4530615B2 (ja) * | 2002-01-22 | 2010-08-25 | セイコーエプソン株式会社 | 圧電体素子および液体吐出ヘッド |
| JP2006261638A (ja) * | 2005-02-21 | 2006-09-28 | Sony Corp | 固体撮像装置および固体撮像装置の駆動方法 |
| JP2009182095A (ja) * | 2008-01-30 | 2009-08-13 | Fujifilm Corp | 光電変換素子及び固体撮像素子 |
| KR101654140B1 (ko) * | 2010-03-30 | 2016-09-09 | 삼성전자주식회사 | 산화물 반도체 트랜지스터를 구비한 엑스선 검출기 |
| KR101678671B1 (ko) | 2010-04-01 | 2016-11-22 | 삼성전자주식회사 | 이중 포토컨덕터를 구비한 엑스선 검출기 |
| KR101820843B1 (ko) | 2011-02-18 | 2018-01-22 | 삼성전자주식회사 | 확산방지막을 구비한 엑스선 검출기 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2213580B1 (OSRAM) * | 1972-10-12 | 1977-09-09 | Matsushita Electric Ind Co Ltd | |
| CA1024734A (en) * | 1973-03-30 | 1978-01-24 | Yukimasa Kuramoto | Photoconductor element |
| JPS5619786B2 (OSRAM) * | 1975-02-20 | 1981-05-09 | ||
| JPS5345119A (en) * | 1976-10-06 | 1978-04-22 | Hitachi Ltd | Solid state pickup element |
| US4112509A (en) * | 1976-12-27 | 1978-09-05 | Texas Instruments Incorporated | Electrically alterable floating gate semiconductor memory device |
| GB1595253A (en) * | 1977-01-24 | 1981-08-12 | Hitachi Ltd | Solid-state imaging devices |
-
1979
- 1979-01-24 US US06/006,129 patent/US4236829A/en not_active Expired - Lifetime
- 1979-01-29 GB GB7903077A patent/GB2014783B/en not_active Expired
- 1979-01-31 DE DE2903651A patent/DE2903651C2/de not_active Expired
- 1979-01-31 FR FR7902477A patent/FR2416554A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2416554B1 (OSRAM) | 1983-02-18 |
| FR2416554A1 (fr) | 1979-08-31 |
| DE2903651A1 (de) | 1979-08-02 |
| US4236829A (en) | 1980-12-02 |
| GB2014783B (en) | 1982-05-06 |
| GB2014783A (en) | 1979-08-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAP | Request for examination filed | ||
| OD | Request for examination | ||
| 8126 | Change of the secondary classification |
Free format text: H04N 3/15 H01L 27/14 H01J 29/45 H01L 29/66 |
|
| D2 | Grant after examination | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: SCHWABE, H., DIPL.-ING. SANDMAIR, K., DIPL.-CHEM. DR.JUR. DR.RER.NAT., PAT.-ANW., 8000 MUENCHEN |
|
| 8339 | Ceased/non-payment of the annual fee |