GB2014783B - Solid-state image sensor - Google Patents

Solid-state image sensor

Info

Publication number
GB2014783B
GB2014783B GB7903077A GB7903077A GB2014783B GB 2014783 B GB2014783 B GB 2014783B GB 7903077 A GB7903077 A GB 7903077A GB 7903077 A GB7903077 A GB 7903077A GB 2014783 B GB2014783 B GB 2014783B
Authority
GB
United Kingdom
Prior art keywords
solid
image sensor
state image
state
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7903077A
Other languages
English (en)
Other versions
GB2014783A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP53010110A external-priority patent/JPS5846066B2/ja
Priority claimed from JP53010987A external-priority patent/JPS6042666B2/ja
Priority claimed from JP53074445A external-priority patent/JPS6055992B2/ja
Priority claimed from JP7444678A external-priority patent/JPS551152A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB2014783A publication Critical patent/GB2014783A/en
Application granted granted Critical
Publication of GB2014783B publication Critical patent/GB2014783B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
GB7903077A 1978-01-31 1979-01-29 Solid-state image sensor Expired GB2014783B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP53010110A JPS5846066B2 (ja) 1978-01-31 1978-01-31 光電変換装置
JP53010987A JPS6042666B2 (ja) 1978-02-01 1978-02-01 固体撮像装置
JP53074445A JPS6055992B2 (ja) 1978-06-19 1978-06-19 光導電素子
JP7444678A JPS551152A (en) 1978-06-19 1978-06-19 Method of fabricating photoconducting element

Publications (2)

Publication Number Publication Date
GB2014783A GB2014783A (en) 1979-08-30
GB2014783B true GB2014783B (en) 1982-05-06

Family

ID=27455325

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7903077A Expired GB2014783B (en) 1978-01-31 1979-01-29 Solid-state image sensor

Country Status (4)

Country Link
US (1) US4236829A (OSRAM)
DE (1) DE2903651C2 (OSRAM)
FR (1) FR2416554A1 (OSRAM)
GB (1) GB2014783B (OSRAM)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6033342B2 (ja) * 1979-06-04 1985-08-02 株式会社日立製作所 固体撮像装置
JPS5670673A (en) * 1979-11-14 1981-06-12 Hitachi Ltd Photoelectric converter
EP0029367B1 (en) * 1979-11-16 1986-03-05 Matsushita Electric Industrial Co., Ltd. Solid state imaging apparatus
US4500924A (en) * 1979-11-16 1985-02-19 Matsushita Electric Industrial Co., Ltd. Solid state imaging apparatus
JPS5689174A (en) * 1979-12-21 1981-07-20 Toshiba Corp Solid image pickup device
JPS56103578A (en) * 1980-01-23 1981-08-18 Hitachi Ltd Solid state pickup element
JPS56165473A (en) * 1980-05-24 1981-12-19 Semiconductor Res Found Semiconductor pickup device
US4568960A (en) * 1980-10-23 1986-02-04 Rockwell International Corporation Blocked impurity band detectors
US4412900A (en) * 1981-03-13 1983-11-01 Hitachi, Ltd. Method of manufacturing photosensors
DE3280262D1 (de) * 1981-05-25 1990-11-29 Toshiba Kawasaki Kk Festkoerper-bildsensor.
JPS5831670A (ja) * 1981-08-20 1983-02-24 Matsushita Electric Ind Co Ltd 固体撮像装置
US4571626A (en) * 1981-09-17 1986-02-18 Matsushita Electric Industrial Co., Ltd. Solid state area imaging apparatus
US4507674A (en) * 1982-06-07 1985-03-26 Hughes Aircraft Company Backside illuminated blocked impurity band infrared detector
JPS58221562A (ja) * 1982-06-18 1983-12-23 Fuji Xerox Co Ltd 原稿読取装置
JPS59107569A (ja) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd 一次元半導体撮像装置
JPS59108476A (ja) * 1982-12-14 1984-06-22 Junichi Nishizawa ２次元固体撮像装置及びその読出し方法
JPS59198084A (ja) * 1983-04-26 1984-11-09 Toshiba Corp 固体撮像装置の残像抑制方式
JPS6118183A (ja) * 1984-07-04 1986-01-27 Fuji Photo Film Co Ltd 固体光検出デバイス
US4694317A (en) * 1984-10-22 1987-09-15 Fuji Photo Film Co., Ltd. Solid state imaging device and process for fabricating the same
EP0186162B1 (en) * 1984-12-24 1989-05-31 Kabushiki Kaisha Toshiba Solid state image sensor
US4789645A (en) * 1987-04-20 1988-12-06 Eaton Corporation Method for fabrication of monolithic integrated circuits
US4912537A (en) * 1988-06-24 1990-03-27 Polaroid Corporation Image sensing array with charge isolation
US5396103A (en) * 1991-05-15 1995-03-07 Minnesota Mining And Manufacturing Company Graded composition ohmic contact for P-type II-VI semiconductors
US7253109B2 (en) 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
US6911124B2 (en) * 1998-09-24 2005-06-28 Applied Materials, Inc. Method of depositing a TaN seed layer
JP4530615B2 (ja) * 2002-01-22 2010-08-25 セイコーエプソン株式会社 圧電体素子および液体吐出ヘッド
JP2006261638A (ja) * 2005-02-21 2006-09-28 Sony Corp 固体撮像装置および固体撮像装置の駆動方法
JP2009182095A (ja) * 2008-01-30 2009-08-13 Fujifilm Corp 光電変換素子及び固体撮像素子
KR101654140B1 (ko) * 2010-03-30 2016-09-09 삼성전자주식회사 산화물 반도체 트랜지스터를 구비한 엑스선 검출기
KR101678671B1 (ko) 2010-04-01 2016-11-22 삼성전자주식회사 이중 포토컨덕터를 구비한 엑스선 검출기
KR101820843B1 (ko) 2011-02-18 2018-01-22 삼성전자주식회사 확산방지막을 구비한 엑스선 검출기

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2213580B1 (OSRAM) * 1972-10-12 1977-09-09 Matsushita Electric Ind Co Ltd
CA1024734A (en) * 1973-03-30 1978-01-24 Yukimasa Kuramoto Photoconductor element
JPS5619786B2 (OSRAM) * 1975-02-20 1981-05-09
JPS5345119A (en) * 1976-10-06 1978-04-22 Hitachi Ltd Solid state pickup element
US4112509A (en) * 1976-12-27 1978-09-05 Texas Instruments Incorporated Electrically alterable floating gate semiconductor memory device
GB1595253A (en) * 1977-01-24 1981-08-12 Hitachi Ltd Solid-state imaging devices

Also Published As

Publication number Publication date
FR2416554B1 (OSRAM) 1983-02-18
FR2416554A1 (fr) 1979-08-31
DE2903651A1 (de) 1979-08-02
DE2903651C2 (de) 1982-06-16
US4236829A (en) 1980-12-02
GB2014783A (en) 1979-08-30

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930129