DE3546717C2 - - Google Patents
Info
- Publication number
- DE3546717C2 DE3546717C2 DE3546717A DE3546717A DE3546717C2 DE 3546717 C2 DE3546717 C2 DE 3546717C2 DE 3546717 A DE3546717 A DE 3546717A DE 3546717 A DE3546717 A DE 3546717A DE 3546717 C2 DE3546717 C2 DE 3546717C2
- Authority
- DE
- Germany
- Prior art keywords
- light
- reading device
- layer
- photo semiconductor
- reading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010410 layer Substances 0.000 claims description 44
- 238000003860 storage Methods 0.000 claims description 26
- 239000003990 capacitor Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 25
- 239000011241 protective layer Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 6
- 239000012777 electrically insulating material Substances 0.000 claims description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 4
- 239000003566 sealing material Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 229920003002 synthetic resin Polymers 0.000 claims 1
- 239000000057 synthetic resin Substances 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 25
- 238000007740 vapor deposition Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 240000002635 Dendrocalamus asper Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
- H04N1/03—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array
- H04N1/031—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array the photodetectors having a one-to-one and optically positive correspondence with the scanned picture elements, e.g. linear contact sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/40—Picture signal circuits
- H04N1/40056—Circuits for driving or energising particular reading heads or original illumination means
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Facsimile Heads (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3546820A DE3546820C2 (de) | 1984-06-21 | 1985-06-21 | Leseeinrichtung |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59128530A JPS617766A (ja) | 1984-06-21 | 1984-06-21 | 読み取り装置 |
| JP60127499A JPH0712077B2 (ja) | 1985-06-11 | 1985-06-11 | 読み取り装置 |
| JP60129418A JPS61287167A (ja) | 1985-06-13 | 1985-06-13 | 読み取り装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3546717C2 true DE3546717C2 (OSRAM) | 1993-06-03 |
Family
ID=27315551
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19853522314 Granted DE3522314A1 (de) | 1984-06-21 | 1985-06-21 | Leseeinrichtung und herstellungsverfahren dafuer |
| DE3546717A Expired - Fee Related DE3546717C2 (OSRAM) | 1984-06-21 | 1985-06-21 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19853522314 Granted DE3522314A1 (de) | 1984-06-21 | 1985-06-21 | Leseeinrichtung und herstellungsverfahren dafuer |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US4703169A (OSRAM) |
| DE (2) | DE3522314A1 (OSRAM) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4894700A (en) * | 1985-04-09 | 1990-01-16 | Fuji Xerox Co., Ltd. | Image sensor |
| EP0228712B1 (en) * | 1986-01-06 | 1995-08-09 | Sel Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device with a high response speed and method for manufacturing the same |
| EP0257747A3 (en) * | 1986-07-15 | 1990-01-17 | OIS Optical Imaging Systems, Inc. | Photoelectric array for scanning large-area non-planar image-bearing surfaces |
| JP2584774B2 (ja) * | 1987-06-12 | 1997-02-26 | キヤノン株式会社 | 密着型光電変換装置 |
| US4943710A (en) * | 1987-06-25 | 1990-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Image sensor and manufacturing method for the same |
| US4943839A (en) * | 1987-08-19 | 1990-07-24 | Ricoh Company, Ltd. | Contact type image sensor |
| US4959533A (en) * | 1987-10-21 | 1990-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Photosensitive semiconductor contact image sensor |
| FR2627922B1 (fr) * | 1988-02-26 | 1990-06-22 | Thomson Csf | Matrice photosensible a deux diodes par point, sans conducteur specifique de remise a niveau |
| JPH088624B2 (ja) * | 1988-03-14 | 1996-01-29 | 株式会社日立製作所 | 完全密着型読取センサ及び読取センサアセンブリ |
| JPH0785568B2 (ja) * | 1989-04-05 | 1995-09-13 | 富士ゼロックス株式会社 | 密着型イメージセンサ装置 |
| JPH03120868A (ja) * | 1989-10-04 | 1991-05-23 | Fuji Xerox Co Ltd | イメージセンサ |
| US20010045508A1 (en) * | 1998-09-21 | 2001-11-29 | Bart Dierickx | Pixel structure for imaging devices |
| US6011251A (en) * | 1997-06-04 | 2000-01-04 | Imec | Method for obtaining a high dynamic range read-out signal of a CMOS-based pixel structure and such CMOS-based pixel structure |
| US6815791B1 (en) | 1997-02-10 | 2004-11-09 | Fillfactory | Buried, fully depletable, high fill factor photodiodes |
| JP3636579B2 (ja) * | 1997-11-04 | 2005-04-06 | キヤノン株式会社 | 光電変換装置、光電変換装置の駆動方法及びその光電変換装置を有するシステム |
| US7106373B1 (en) | 1998-02-09 | 2006-09-12 | Cypress Semiconductor Corporation (Belgium) Bvba | Method for increasing dynamic range of a pixel by multiple incomplete reset |
| US8063963B2 (en) * | 1998-02-09 | 2011-11-22 | On Semiconductor Image Sensor | Imaging device having a pixel structure with high dynamic range read-out signal |
| US7808022B1 (en) | 2005-03-28 | 2010-10-05 | Cypress Semiconductor Corporation | Cross talk reduction |
| US7750958B1 (en) | 2005-03-28 | 2010-07-06 | Cypress Semiconductor Corporation | Pixel structure |
| US7974805B2 (en) * | 2008-10-14 | 2011-07-05 | ON Semiconductor Trading, Ltd | Image sensor and method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4149197A (en) * | 1977-10-11 | 1979-04-10 | Northern Telecom Limited | Direct imaging apparatus for an electronic document transmitter utilizing a linear array of photo-detectors |
| US4419696A (en) * | 1980-12-10 | 1983-12-06 | Fuji Xerox Co., Ltd. | Elongate thin-film reader |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3504114A (en) * | 1969-02-24 | 1970-03-31 | Westinghouse Electric Corp | Photosensitive image system |
| JPS5226974B2 (OSRAM) * | 1973-02-14 | 1977-07-18 | ||
| US3969751A (en) * | 1974-12-18 | 1976-07-13 | Rca Corporation | Light shield for a semiconductor device comprising blackened photoresist |
| JPS56136076A (en) * | 1980-03-26 | 1981-10-23 | Hitachi Ltd | Photoelectric converter |
| US4441791A (en) * | 1980-09-02 | 1984-04-10 | Texas Instruments Incorporated | Deformable mirror light modulator |
| US4571626A (en) * | 1981-09-17 | 1986-02-18 | Matsushita Electric Industrial Co., Ltd. | Solid state area imaging apparatus |
| CA1177148A (en) * | 1981-10-06 | 1984-10-30 | Robert J. Mcintyre | Avalanche photodiode array |
| NL8200719A (nl) * | 1982-02-24 | 1983-09-16 | Hitachi Ltd | Foto-aftastinrichting. |
| US4527006A (en) * | 1982-11-24 | 1985-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| US4667214A (en) * | 1983-06-24 | 1987-05-19 | Canon Kabushiki Kaisha | Photosensor |
| JP3077407B2 (ja) * | 1992-08-28 | 2000-08-14 | 松下電器産業株式会社 | 電気掃除機用吸込具 |
-
1985
- 1985-06-21 DE DE19853522314 patent/DE3522314A1/de active Granted
- 1985-06-21 DE DE3546717A patent/DE3546717C2/de not_active Expired - Fee Related
-
1986
- 1986-12-18 US US06/945,072 patent/US4703169A/en not_active Expired - Fee Related
- 1986-12-18 US US06/944,833 patent/US4740710A/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4149197A (en) * | 1977-10-11 | 1979-04-10 | Northern Telecom Limited | Direct imaging apparatus for an electronic document transmitter utilizing a linear array of photo-detectors |
| US4149197B1 (OSRAM) * | 1977-10-11 | 1989-12-19 | ||
| US4419696A (en) * | 1980-12-10 | 1983-12-06 | Fuji Xerox Co., Ltd. | Elongate thin-film reader |
Non-Patent Citations (1)
| Title |
|---|
| Datenbuch: Optoelektronische Bauelemente 1977, AEG-Telefunken Serienprodukte AG, Heilbronn, S.29A * |
Also Published As
| Publication number | Publication date |
|---|---|
| US4740710A (en) | 1988-04-26 |
| US4703169A (en) | 1987-10-27 |
| DE3522314A1 (de) | 1986-01-02 |
| DE3522314C2 (OSRAM) | 1989-12-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| Q172 | Divided out of (supplement): |
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|
| 8110 | Request for examination paragraph 44 | ||
| AC | Divided out of |
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| 8172 | Supplementary division/partition in: |
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| Q171 | Divided out to: |
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| AC | Divided out of |
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| AH | Division in |
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| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| AH | Division in |
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| 8339 | Ceased/non-payment of the annual fee |