DE2857640C2 - Verfahren zum Dotieren eines Halbleiters - Google Patents
Verfahren zum Dotieren eines HalbleitersInfo
- Publication number
- DE2857640C2 DE2857640C2 DE2857640A DE2857640A DE2857640C2 DE 2857640 C2 DE2857640 C2 DE 2857640C2 DE 2857640 A DE2857640 A DE 2857640A DE 2857640 A DE2857640 A DE 2857640A DE 2857640 C2 DE2857640 C2 DE 2857640C2
- Authority
- DE
- Germany
- Prior art keywords
- mol
- source
- sio
- polycrystalline
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 36
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 229910052698 phosphorus Inorganic materials 0.000 claims description 21
- 239000011574 phosphorus Substances 0.000 claims description 20
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 19
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 18
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 17
- 239000002019 doping agent Substances 0.000 claims description 14
- 239000000155 melt Substances 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000012159 carrier gas Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims 1
- 239000000470 constituent Substances 0.000 claims 1
- 230000000717 retained effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 20
- 238000009792 diffusion process Methods 0.000 description 10
- 230000032683 aging Effects 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000004254 Ammonium phosphate Substances 0.000 description 3
- 229910019142 PO4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 3
- 235000019289 ammonium phosphates Nutrition 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 235000021317 phosphate Nutrition 0.000 description 3
- -1 phosphorus compound Chemical class 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000001506 calcium phosphate Substances 0.000 description 2
- 229910000389 calcium phosphate Inorganic materials 0.000 description 2
- 235000011010 calcium phosphates Nutrition 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 241000208152 Geranium Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- ILRRQNADMUWWFW-UHFFFAOYSA-K aluminium phosphate Chemical compound O1[Al]2OP1(=O)O2 ILRRQNADMUWWFW-UHFFFAOYSA-K 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000006092 crystalline glass-ceramic Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 235000015110 jellies Nutrition 0.000 description 1
- 239000008274 jelly Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 1
- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/16—Silica-free oxide glass compositions containing phosphorus
- C03C3/17—Silica-free oxide glass compositions containing phosphorus containing aluminium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0009—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing silica as main constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Glass Compositions (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/887,264 US4141738A (en) | 1978-03-16 | 1978-03-16 | Melt-formed polycrystalline ceramics and dopant hosts containing phosphorus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2857640C2 true DE2857640C2 (de) | 1983-03-17 |
Family
ID=25390790
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2857640A Expired DE2857640C2 (de) | 1978-03-16 | 1978-12-09 | Verfahren zum Dotieren eines Halbleiters |
| DE2857639A Expired DE2857639C2 (de) | 1978-03-16 | 1978-12-09 | Planare P↓2↓O↓5↓- und Al↓2↓O↓3↓-haltige Dotierstoffquelle |
| DE2853331A Expired DE2853331C2 (de) | 1978-03-16 | 1978-12-09 | Aus der Schmelze geformter polykristalliner keramischer Körper, der Phosphoroxid enthält |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2857639A Expired DE2857639C2 (de) | 1978-03-16 | 1978-12-09 | Planare P↓2↓O↓5↓- und Al↓2↓O↓3↓-haltige Dotierstoffquelle |
| DE2853331A Expired DE2853331C2 (de) | 1978-03-16 | 1978-12-09 | Aus der Schmelze geformter polykristalliner keramischer Körper, der Phosphoroxid enthält |
Country Status (7)
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4239560A (en) * | 1979-05-21 | 1980-12-16 | General Electric Company | Open tube aluminum oxide disc diffusion |
| US4523591A (en) * | 1982-10-22 | 1985-06-18 | Kaplan Donald S | Polymers for injection molding of absorbable surgical devices |
| JPS60210546A (ja) * | 1984-04-02 | 1985-10-23 | Ngk Spark Plug Co Ltd | 歯冠用結晶化ガラス |
| US4588455A (en) * | 1984-08-15 | 1986-05-13 | Emulsitone Company | Planar diffusion source |
| NZ224209A (en) * | 1987-05-18 | 1990-10-26 | Mobil Oil Corp | Amorphous refractory composition as support for catalyst and its use in upgrading feedstock of petroleum residues |
| US4800175A (en) * | 1987-05-29 | 1989-01-24 | Owens-Illinois Television Products Inc. | Phosphorous planar dopant source for low temperature applications |
| JPS63195842U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1987-06-04 | 1988-12-16 | ||
| US4846902A (en) * | 1988-05-19 | 1989-07-11 | Owens-Illinois Television Products Inc. | Solid diffusion source of GD oxide/P205 compound and method of making silicon wafer |
| US5350461A (en) * | 1992-12-08 | 1994-09-27 | Techneglas, Inc. | Low temperature P2 O5 oxide diffusion source |
| US5350460A (en) * | 1992-12-08 | 1994-09-27 | Techneglas, Inc. | High temperature phosphorus oxide diffusion source |
| AU2001290515B2 (en) | 2000-08-16 | 2007-02-01 | Covidien Lp | High consistency absorbable polymeric resin |
| US11168020B2 (en) | 2018-02-14 | 2021-11-09 | Corning Incorporated | Transparent tantalum oxide glass-ceramics and transparent aluminum tantalate glass-ceramics |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3998668A (en) * | 1973-12-21 | 1976-12-21 | Owens-Illinois, Inc. | Aluminum metaphosphate dopant sources |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1177799A (fr) * | 1956-06-04 | 1959-04-29 | Corning Glass Works | Procédé de fabrication de produits céramiques |
| DE1263236B (de) * | 1960-02-13 | 1968-03-14 | Leitz Ernst Gmbh | Glas, insbesondere als Werkstoff fuer optische Bauelemente |
| US3519445A (en) * | 1967-11-06 | 1970-07-07 | Corning Glass Works | Al2o3-p2o5-b2o3 glass-ceramic articles and methods |
| FR2087352A5 (en) * | 1970-05-15 | 1971-12-31 | Corning Glass Works | Transparent glass ceramic - based on alumina phosphorus pentoxide with boric oxide nucleating agent |
| US3997351A (en) * | 1974-01-07 | 1976-12-14 | Owens-Illinois, Inc. | Glass-ceramic dopant host for vapor phase transport of B2 O3 |
| US3961969A (en) * | 1974-01-07 | 1976-06-08 | Owens-Illinois, Inc. | Glass-ceramics for semiconductor doping |
| US3907618A (en) * | 1974-01-07 | 1975-09-23 | Owens Illinois Inc | Process for doping semiconductor employing glass-ceramic dopant |
| JPS51118960A (en) * | 1975-04-11 | 1976-10-19 | Denki Kagaku Kogyo Kk | Wafer form semiconductor doping material |
| US4047960A (en) * | 1976-06-18 | 1977-09-13 | Corning Glass Works | Refractory partially crystalline materials with good visible transparency |
-
1978
- 1978-03-16 US US05/887,264 patent/US4141738A/en not_active Expired - Lifetime
- 1978-11-21 NL NL7811440A patent/NL7811440A/xx not_active Application Discontinuation
- 1978-11-30 JP JP14731778A patent/JPS54125212A/ja active Granted
- 1978-12-09 DE DE2857640A patent/DE2857640C2/de not_active Expired
- 1978-12-09 DE DE2857639A patent/DE2857639C2/de not_active Expired
- 1978-12-09 DE DE2853331A patent/DE2853331C2/de not_active Expired
-
1979
- 1979-01-29 FR FR7902231A patent/FR2419922A1/fr not_active Withdrawn
- 1979-02-28 IT IT48159/79A patent/IT1116828B/it active
- 1979-03-15 GB GB7909236A patent/GB2016440B/en not_active Expired
-
1981
- 1981-11-04 JP JP56175838A patent/JPS57103315A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3998668A (en) * | 1973-12-21 | 1976-12-21 | Owens-Illinois, Inc. | Aluminum metaphosphate dopant sources |
Also Published As
| Publication number | Publication date |
|---|---|
| IT7948159A0 (it) | 1979-02-28 |
| DE2853331A1 (de) | 1979-10-04 |
| US4141738A (en) | 1979-02-27 |
| JPS6227726B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-06-16 |
| FR2419922A1 (fr) | 1979-10-12 |
| JPS5732026B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1982-07-08 |
| DE2853331C2 (de) | 1983-05-26 |
| GB2016440A (en) | 1979-09-26 |
| NL7811440A (nl) | 1979-09-18 |
| GB2016440B (en) | 1982-12-22 |
| JPS54125212A (en) | 1979-09-28 |
| JPS57103315A (en) | 1982-06-26 |
| DE2857639C2 (de) | 1983-02-03 |
| IT1116828B (it) | 1986-02-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OI | Miscellaneous see part 1 | ||
| OI | Miscellaneous see part 1 | ||
| OD | Request for examination | ||
| AC | Divided out of |
Ref country code: DE Ref document number: 2853331 Format of ref document f/p: P |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |