DE2856692A1 - Verfahren zur herstellung von nichtfluechtigen halbleiterspeichern - Google Patents

Verfahren zur herstellung von nichtfluechtigen halbleiterspeichern

Info

Publication number
DE2856692A1
DE2856692A1 DE19782856692 DE2856692A DE2856692A1 DE 2856692 A1 DE2856692 A1 DE 2856692A1 DE 19782856692 DE19782856692 DE 19782856692 DE 2856692 A DE2856692 A DE 2856692A DE 2856692 A1 DE2856692 A1 DE 2856692A1
Authority
DE
Germany
Prior art keywords
silicon
layer
doping
chip
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19782856692
Other languages
German (de)
English (en)
Other versions
DE2856692C2 (OSRAM
Inventor
Hans-Eberhard Ing Grad Longo
Gunther Dipl Phys Plasa
Jacobus W Dipl Ing Scholtens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE19782856692 priority Critical patent/DE2856692A1/de
Publication of DE2856692A1 publication Critical patent/DE2856692A1/de
Application granted granted Critical
Publication of DE2856692C2 publication Critical patent/DE2856692C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83135—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different gate conductor materials or different gate conductor implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8314—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having gate insulating layers with different properties
    • H10P76/40—
    • H10W10/012—
    • H10W10/13—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
DE19782856692 1978-12-29 1978-12-29 Verfahren zur herstellung von nichtfluechtigen halbleiterspeichern Granted DE2856692A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19782856692 DE2856692A1 (de) 1978-12-29 1978-12-29 Verfahren zur herstellung von nichtfluechtigen halbleiterspeichern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782856692 DE2856692A1 (de) 1978-12-29 1978-12-29 Verfahren zur herstellung von nichtfluechtigen halbleiterspeichern

Publications (2)

Publication Number Publication Date
DE2856692A1 true DE2856692A1 (de) 1980-07-10
DE2856692C2 DE2856692C2 (OSRAM) 1988-02-18

Family

ID=6058679

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782856692 Granted DE2856692A1 (de) 1978-12-29 1978-12-29 Verfahren zur herstellung von nichtfluechtigen halbleiterspeichern

Country Status (1)

Country Link
DE (1) DE2856692A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984004852A1 (en) * 1983-05-27 1984-12-06 Ncr Co Process for fabricating complementary and nonvolatile type devices on a common substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Philips Research Reports 25, 1970, S. 118-132 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984004852A1 (en) * 1983-05-27 1984-12-06 Ncr Co Process for fabricating complementary and nonvolatile type devices on a common substrate

Also Published As

Publication number Publication date
DE2856692C2 (OSRAM) 1988-02-18

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: G11C 17/00

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee