DE2835950A1 - Ladungsuebertragungsspeichereinrichtung - Google Patents

Ladungsuebertragungsspeichereinrichtung

Info

Publication number
DE2835950A1
DE2835950A1 DE19782835950 DE2835950A DE2835950A1 DE 2835950 A1 DE2835950 A1 DE 2835950A1 DE 19782835950 DE19782835950 DE 19782835950 DE 2835950 A DE2835950 A DE 2835950A DE 2835950 A1 DE2835950 A1 DE 2835950A1
Authority
DE
Germany
Prior art keywords
electrode
shift register
electrodes
stage
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19782835950
Other languages
German (de)
English (en)
Other versions
DE2835950C2 (enExample
Inventor
Donald John Mac Lennan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/825,924 external-priority patent/US4125786A/en
Priority claimed from US05/878,427 external-priority patent/US4125785A/en
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE2835950A1 publication Critical patent/DE2835950A1/de
Application granted granted Critical
Publication of DE2835950C2 publication Critical patent/DE2835950C2/de
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287Organisation of a multiplicity of shift registers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/38Digital stores in which the information is moved stepwise, e.g. shift registers two-dimensional, e.g. horizontal and vertical shift registers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04Shift registers

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Measurement And Recording Of Electrical Phenomena And Electrical Characteristics Of The Living Body (AREA)
DE19782835950 1977-08-19 1978-08-17 Ladungsuebertragungsspeichereinrichtung Granted DE2835950A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/825,924 US4125786A (en) 1977-08-19 1977-08-19 Charge transfer memory apparatus
US05/878,427 US4125785A (en) 1978-02-16 1978-02-16 Charge transfer memory apparatus

Publications (2)

Publication Number Publication Date
DE2835950A1 true DE2835950A1 (de) 1979-07-05
DE2835950C2 DE2835950C2 (enExample) 1989-10-05

Family

ID=27124958

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19782835950 Granted DE2835950A1 (de) 1977-08-19 1978-08-17 Ladungsuebertragungsspeichereinrichtung
DE19787824494U Expired DE7824494U1 (de) 1977-08-19 1978-08-17 Ladungsuebertragungsspeichereinrichtung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19787824494U Expired DE7824494U1 (de) 1977-08-19 1978-08-17 Ladungsuebertragungsspeichereinrichtung

Country Status (3)

Country Link
DE (2) DE2835950A1 (enExample)
GB (1) GB2002960B (enExample)
IL (1) IL55367A (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953837A (en) * 1974-11-27 1976-04-27 Texas Instruments Incorporated Dual serial-parallel-serial analog memory
DE2604449A1 (de) * 1975-02-05 1976-08-19 Rca Corp Analog-digital-umsetzer
US4001878A (en) * 1975-11-19 1977-01-04 Rca Corporation Charge transfer color imagers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953837A (en) * 1974-11-27 1976-04-27 Texas Instruments Incorporated Dual serial-parallel-serial analog memory
DE2604449A1 (de) * 1975-02-05 1976-08-19 Rca Corp Analog-digital-umsetzer
US4001878A (en) * 1975-11-19 1977-01-04 Rca Corporation Charge transfer color imagers

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
SEquin, Carlo Two-Dimensional Charge-Transfer Arrays in: IEEE Journal of Solid-State Circuits, Vol. SC-9, No. 3, Juni 1974, S. 134-142 *
Séquin, Carlo Two-Dimensional Charge-Transfer Arrays in: IEEE Journal of Solid-State Circuits, Vol. SC-9, No. 3, Juni 1974, S. 134-142

Also Published As

Publication number Publication date
IL55367A0 (en) 1978-10-31
GB2002960A (en) 1979-02-28
DE2835950C2 (enExample) 1989-10-05
IL55367A (en) 1981-07-31
DE7824494U1 (de) 1979-01-18
GB2002960B (en) 1982-01-13

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Legal Events

Date Code Title Description
OAM Search report available
OC Search report available
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee