GB2002960A - Charge transfer memory apparatus - Google Patents

Charge transfer memory apparatus

Info

Publication number
GB2002960A
GB2002960A GB7833698A GB7833698A GB2002960A GB 2002960 A GB2002960 A GB 2002960A GB 7833698 A GB7833698 A GB 7833698A GB 7833698 A GB7833698 A GB 7833698A GB 2002960 A GB2002960 A GB 2002960A
Authority
GB
United Kingdom
Prior art keywords
rows
column
charge packets
ctd
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7833698A
Other versions
GB2002960B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/825,924 external-priority patent/US4125786A/en
Priority claimed from US05/878,427 external-priority patent/US4125785A/en
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB2002960A publication Critical patent/GB2002960A/en
Application granted granted Critical
Publication of GB2002960B publication Critical patent/GB2002960B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287—Organisation of a multiplicity of shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/38—Digital stores in which the information is moved stepwise, e.g. shift registers two-dimensional, e.g. horizontal and vertical shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement And Recording Of Electrical Phenomena And Electrical Characteristics Of The Living Body (AREA)

Abstract

In a CTD, M(eg3) rows of charge transfer channels 11-13 each have identical sets of r(eg4) electrodes 31-34. In response to a first set of clocking voltages, N(eg4) charge packets, each of which is a sampled analog signal, are initially entered in parallel from an input shift register 45 vertically into the N successive stages contained in a first one 11 of the M horizontal rows, and concurrently the charge packets just previously stored in the first to (M-1)<th> rows, are transferred vertically for storage in the respectively like-numbered ones of the N stages, of the second to M<th> rows, respectively. This transfer is effected through channels 36c,36d connecting the (r-1)<th> electrode 33 of one row to the first electrode 31 of the next row. The entry and shifting continues in successive steps, until M such sequences, each containing N charge packets, are loaded in the array. Then, in response to a second set of clocking voltages applied to the sets of r electrodes 31-34, transfers are made horizontally in repeated steps, such that in each step the contents of the N<th> column are shifted out of the array and are read, those of the (N-1)<th> column are shifted into the N<th> column, etc. The CTD is suitable for integrated circuit fabrication and is usable for re-sorting the order of analog signal samples, such as in radar, colour television, image display, or medical electronics applications. <IMAGE>
GB7833698A 1977-08-19 1978-08-17 Charge transfer memory apparatus Expired GB2002960B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/825,924 US4125786A (en) 1977-08-19 1977-08-19 Charge transfer memory apparatus
US05/878,427 US4125785A (en) 1978-02-16 1978-02-16 Charge transfer memory apparatus

Publications (2)

Publication Number Publication Date
GB2002960A true GB2002960A (en) 1979-02-28
GB2002960B GB2002960B (en) 1982-01-13

Family

ID=27124958

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7833698A Expired GB2002960B (en) 1977-08-19 1978-08-17 Charge transfer memory apparatus

Country Status (3)

Country Link
DE (2) DE2835950A1 (en)
GB (1) GB2002960B (en)
IL (1) IL55367A (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953837A (en) * 1974-11-27 1976-04-27 Texas Instruments Incorporated Dual serial-parallel-serial analog memory
US3958210A (en) * 1975-02-05 1976-05-18 Rca Corporation Charge coupled device systems
US4001878A (en) * 1975-11-19 1977-01-04 Rca Corporation Charge transfer color imagers

Also Published As

Publication number Publication date
DE2835950A1 (en) 1979-07-05
IL55367A (en) 1981-07-31
DE7824494U1 (en) 1979-01-18
IL55367A0 (en) 1978-10-31
GB2002960B (en) 1982-01-13
DE2835950C2 (en) 1989-10-05

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee