DE2819420C2 - Verfahren zum Vorbereiten eines Einkristall-Rohlings, der mittels einer Innenlochsäge in Scheiben zersägt wird - Google Patents
Verfahren zum Vorbereiten eines Einkristall-Rohlings, der mittels einer Innenlochsäge in Scheiben zersägt wirdInfo
- Publication number
- DE2819420C2 DE2819420C2 DE2819420A DE2819420A DE2819420C2 DE 2819420 C2 DE2819420 C2 DE 2819420C2 DE 2819420 A DE2819420 A DE 2819420A DE 2819420 A DE2819420 A DE 2819420A DE 2819420 C2 DE2819420 C2 DE 2819420C2
- Authority
- DE
- Germany
- Prior art keywords
- blank
- sawn
- hole saw
- slices
- internal hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title claims description 16
- 238000000034 method Methods 0.000 title claims description 15
- 230000007547 defect Effects 0.000 description 3
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
- B28D5/028—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a ring blade having an inside cutting edge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/003—Multipurpose machines; Equipment therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mining & Mineral Resources (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/803,082 US4084354A (en) | 1977-06-03 | 1977-06-03 | Process for slicing boules of single crystal material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2819420A1 DE2819420A1 (de) | 1978-12-14 |
| DE2819420C2 true DE2819420C2 (de) | 1987-05-14 |
Family
ID=25185528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2819420A Expired DE2819420C2 (de) | 1977-06-03 | 1978-05-03 | Verfahren zum Vorbereiten eines Einkristall-Rohlings, der mittels einer Innenlochsäge in Scheiben zersägt wird |
Country Status (12)
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4344260A (en) * | 1979-07-13 | 1982-08-17 | Nagano Electronics Industrial Co., Ltd. | Method for precision shaping of wafer materials |
| JPS56105638A (en) * | 1980-01-26 | 1981-08-22 | Sumitomo Electric Ind Ltd | Manufacture of circular gallium arsenide wafer |
| DE3036829A1 (de) * | 1980-09-30 | 1982-05-13 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zum aufnehmen von kristallscheiben |
| JPS6213305A (ja) * | 1985-07-12 | 1987-01-22 | 株式会社日立製作所 | ワ−ク回転式切断法およびその装置 |
| JPS6296400A (ja) * | 1985-10-23 | 1987-05-02 | Mitsubishi Metal Corp | ウエハの製造方法 |
| DE3716943A1 (de) * | 1987-05-20 | 1988-12-08 | Hans J Scheel | Verfahren und vorrichtung zum trennen von insbesondere stabfoermigem material |
| US4852304A (en) * | 1987-10-29 | 1989-08-01 | Tokyo Seimtsu Co., Ltd. | Apparatus and method for slicing a wafer |
| US5111622A (en) * | 1989-05-18 | 1992-05-12 | Silicon Technology Corporation | Slicing and grinding system for a wafer slicing machine |
| US5095664A (en) * | 1990-01-30 | 1992-03-17 | Massachusetts Institute Of Technology | Optical surface polishing method |
| JP3060445B2 (ja) * | 1992-07-16 | 2000-07-10 | 株式会社東京精密 | 半導体ウエハのスライシング方法及びその装置 |
| JP2903916B2 (ja) * | 1992-11-30 | 1999-06-14 | 信越半導体株式会社 | 半導体インゴット加工方法 |
| EP0604061A1 (en) * | 1992-12-24 | 1994-06-29 | AT&T Corp. | Semiconductor fabrication |
| JP2789983B2 (ja) * | 1993-01-28 | 1998-08-27 | 信越半導体株式会社 | 加工誤差補正装置 |
| CH690845A5 (de) * | 1994-05-19 | 2001-02-15 | Tokyo Seimitsu Co Ltd | Verfahren zum Positionieren eines Werkstücks und Vorrichtung hierfür. |
| CZ283541B6 (cs) * | 1996-03-06 | 1998-04-15 | Trimex Tesla, S.R.O. | Způsob řezání ingotů z tvrdých materiálů na desky a pila k provádění tohoto způsobu |
| JP3213563B2 (ja) * | 1997-03-11 | 2001-10-02 | 株式会社スーパーシリコン研究所 | ノッチレスウェーハの製造方法 |
| US7007855B1 (en) * | 2000-03-17 | 2006-03-07 | International Business Machines Corporation | Wafer identification mark |
| DE10019601B4 (de) | 2000-04-20 | 2006-09-14 | Wacker Chemie Ag | Verfahren zur Herstellung eines polykristallinen Siliciumstabes |
| JP3649393B2 (ja) * | 2000-09-28 | 2005-05-18 | シャープ株式会社 | シリコンウエハの加工方法、シリコンウエハおよびシリコンブロック |
| US7637801B2 (en) * | 2000-09-28 | 2009-12-29 | Sharp Kabushiki Kaisha | Method of making solar cell |
| DE10103592B4 (de) * | 2001-01-26 | 2006-07-13 | Ernst Spielvogel | Säge zum Zerteilen von Materialien in dünne Scheiben, insbesondere zum Zerteilen von Wafern aus Silizium |
| KR100810058B1 (ko) * | 2003-06-10 | 2008-03-05 | 에이디이 코포레이션 | 멀티-채널 데이터의 그래픽 표현을 이용하여 기판의표면에서 발생하는 결함을 분류하는 방법 및 시스템 |
| US20100300259A1 (en) * | 2009-05-29 | 2010-12-02 | Applied Materials, Inc. | Substrate side marking and identification |
| CN108523329A (zh) * | 2018-02-07 | 2018-09-14 | 上海黛恩妠珠宝有限公司 | 一种碳硅石圆钻 |
| CN111775354B (zh) * | 2020-06-19 | 2021-10-01 | 山东省科学院新材料研究所 | 一种钽铌酸钾单晶基片元件的加工制作方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL105904C (US20030186963A1-20031002-C00026.png) * | 1955-12-30 | |||
| DE1145989B (de) * | 1959-10-29 | 1963-03-21 | Intermetall | Vorrichtung zum Saegen von kleinen stabfoermigen Objekten, insbesondere Halbleiter-Einkristallen |
| US3039235A (en) * | 1961-01-31 | 1962-06-19 | Hamco Mach & Elect Co | Cutting apparatus |
| DE1427716A1 (de) * | 1964-01-20 | 1969-01-16 | Halbleiterwerk Frankfurt Oder | Verfahren und Vorrichtung zum Abtrennen duenner Kristallscheiben aus Halbleitermaterial von Einkristallstaeben |
| DE1752443A1 (de) * | 1968-05-27 | 1971-05-27 | Helmut Willems | Innenlochsaege |
| US3626644A (en) * | 1969-07-17 | 1971-12-14 | John A Cupler | Method of making solid diamond drills |
| US3662733A (en) * | 1969-10-12 | 1972-05-16 | Yoji Hattori | Annular cutting apparatus with work removal means |
| JPS5243189A (en) * | 1975-10-03 | 1977-04-04 | Hitachi Ltd | Method for cutting crystal |
-
1977
- 1977-06-03 US US05/803,082 patent/US4084354A/en not_active Expired - Lifetime
-
1978
- 1978-03-31 CA CA300,171A patent/CA1084172A/en not_active Expired
- 1978-04-06 AU AU34831/78A patent/AU516065B2/en not_active Expired
- 1978-04-18 CH CH411078A patent/CH633744A5/de not_active IP Right Cessation
- 1978-04-21 NL NL7804265A patent/NL7804265A/xx not_active Application Discontinuation
- 1978-04-26 GB GB16574/78A patent/GB1555299A/en not_active Expired
- 1978-04-27 FR FR7813285A patent/FR2392793A1/fr active Granted
- 1978-05-03 DE DE2819420A patent/DE2819420C2/de not_active Expired
- 1978-05-24 SE SE7805925A patent/SE429313B/sv not_active IP Right Cessation
- 1978-05-26 IT IT23831/78A patent/IT1111182B/it active
- 1978-06-01 JP JP6500078A patent/JPS542585A/ja active Granted
- 1978-06-01 BR BR7803511A patent/BR7803511A/pt unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BR7803511A (pt) | 1979-04-24 |
| CH633744A5 (de) | 1982-12-31 |
| AU516065B2 (en) | 1981-05-14 |
| IT1111182B (it) | 1986-01-13 |
| SE429313B (sv) | 1983-08-29 |
| FR2392793B1 (US20030186963A1-20031002-C00026.png) | 1982-05-14 |
| FR2392793A1 (fr) | 1978-12-29 |
| GB1555299A (en) | 1979-11-07 |
| JPS6159889B2 (US20030186963A1-20031002-C00026.png) | 1986-12-18 |
| AU3483178A (en) | 1979-10-11 |
| IT7823831A0 (it) | 1978-05-26 |
| NL7804265A (nl) | 1978-12-05 |
| CA1084172A (en) | 1980-08-19 |
| US4084354A (en) | 1978-04-18 |
| DE2819420A1 (de) | 1978-12-14 |
| SE7805925L (sv) | 1978-12-04 |
| JPS542585A (en) | 1979-01-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |