DE2811760A1 - Thyristor - Google Patents
ThyristorInfo
- Publication number
- DE2811760A1 DE2811760A1 DE19782811760 DE2811760A DE2811760A1 DE 2811760 A1 DE2811760 A1 DE 2811760A1 DE 19782811760 DE19782811760 DE 19782811760 DE 2811760 A DE2811760 A DE 2811760A DE 2811760 A1 DE2811760 A1 DE 2811760A1
- Authority
- DE
- Germany
- Prior art keywords
- emitter
- region
- resistors
- thyristor
- inner edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
Landscapes
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/953,496 US4254570A (en) | 1977-10-22 | 1978-10-23 | Double barrelled firearm |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US77944777A | 1977-03-21 | 1977-03-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2811760A1 true DE2811760A1 (de) | 1978-09-28 |
Family
ID=25116481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19782811760 Withdrawn DE2811760A1 (de) | 1977-03-21 | 1978-03-17 | Thyristor |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS53116082A (enrdf_load_stackoverflow) |
BE (1) | BE865003A (enrdf_load_stackoverflow) |
BR (1) | BR7801555A (enrdf_load_stackoverflow) |
CA (1) | CA1108309A (enrdf_load_stackoverflow) |
DE (1) | DE2811760A1 (enrdf_load_stackoverflow) |
FR (1) | FR2385226A1 (enrdf_load_stackoverflow) |
GB (1) | GB1602216A (enrdf_load_stackoverflow) |
IN (1) | IN149647B (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58222571A (ja) * | 1982-06-19 | 1983-12-24 | Mitsubishi Electric Corp | サイリスタ |
JP3225334B2 (ja) * | 1995-06-14 | 2001-11-05 | 株式会社新川 | リードフレームの検出装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2254880B1 (enrdf_load_stackoverflow) * | 1973-12-12 | 1978-11-10 | Alsthom Cgee | |
JPS5155677A (ja) * | 1974-11-11 | 1976-05-15 | Hitachi Ltd | Handotaiseigyoseiryusochi |
GB1546094A (en) * | 1975-04-11 | 1979-05-16 | Aei Semiconductors Ltd | Thyristors |
DE2520134C3 (de) * | 1975-05-06 | 1978-10-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor mit einem rechteckigen Halbleiterelement |
-
1978
- 1978-02-07 IN IN139/CAL/78A patent/IN149647B/en unknown
- 1978-02-24 CA CA297,837A patent/CA1108309A/en not_active Expired
- 1978-03-13 GB GB9747/78A patent/GB1602216A/en not_active Expired
- 1978-03-15 BR BR7801555A patent/BR7801555A/pt unknown
- 1978-03-17 DE DE19782811760 patent/DE2811760A1/de not_active Withdrawn
- 1978-03-17 BE BE1008771A patent/BE865003A/xx not_active IP Right Cessation
- 1978-03-20 JP JP3118078A patent/JPS53116082A/ja active Pending
- 1978-03-20 FR FR7808033A patent/FR2385226A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
CA1108309A (en) | 1981-09-01 |
GB1602216A (en) | 1981-11-11 |
IN149647B (enrdf_load_stackoverflow) | 1982-02-27 |
BE865003A (fr) | 1978-09-18 |
FR2385226A1 (fr) | 1978-10-20 |
JPS53116082A (en) | 1978-10-11 |
BR7801555A (pt) | 1978-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69331793T2 (de) | Integriertes Leistungshalbleiterschaltkreisbauelement mit gleichförmiger elektrischer Feldverteilung | |
DE112017007068T5 (de) | Halbleitervorrichtung | |
DE3103444A1 (de) | Vertikal-mis-feldeffekttransistor mit kleinem durchlasswiderstand | |
DE112010005546T5 (de) | Halbleitervorrichtung | |
DE2500775C3 (de) | Hochspannungsfestes planeres Halbleiterbauelement | |
DE2205262A1 (de) | Integrierte Kippschaltung | |
DE69021915T2 (de) | MOS-Pilotstruktur für einen Transistor mit isolierter Steuerelektrode und Verfahren zur Versorgung eines solchen Transistors mit Pilotstrom. | |
DE2658090C2 (de) | Monolithisch integrierter bipolarer Transistor mit niedrigem Sättigungswiderstand | |
DE1789119A1 (de) | Halbleiteranordnung | |
DE2944069A1 (de) | Halbleiteranordnung | |
DE2811760A1 (de) | Thyristor | |
DE1212221B (de) | Halbleiterbauelement mit einem scheibenfoermigen Halbleiterkoerper und zwei sperrfreien Basiselektroden | |
DE2544907C2 (enrdf_load_stackoverflow) | ||
DE2607194C2 (de) | Halbleiteranordnung | |
DE3328958C2 (enrdf_load_stackoverflow) | ||
DE1514228C3 (de) | Feldeffekttransistor | |
DE2026036A1 (de) | pn-Planarhalbleiterelement für hohe Spannungen | |
DE112018007456B4 (de) | Halbleitervorrichtung, Halbleiterwafer und Verfahren zum Herstellen einer Halbleitervorrichtung | |
DE1166939B (de) | Spannungsregelnde Halbleiterdiode | |
DE1297239C2 (de) | Leistungstransistor | |
DE2732360A1 (de) | Hochspannungs-thyristor | |
DE19818296C1 (de) | Hochspannungs-Randabschluß für ein Halbleiterbauelement | |
DE2527191A1 (de) | Thyristor | |
DE1171992C2 (de) | Transistor mit Dotierung der Basiszone | |
DE1539694A1 (de) | Halbleiterelement mit vier Zonen abwechselnden Leitfaehigkeitstyps |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8139 | Disposal/non-payment of the annual fee |