IN149647B - - Google Patents

Info

Publication number
IN149647B
IN149647B IN139/CAL/78A IN139CA1978A IN149647B IN 149647 B IN149647 B IN 149647B IN 139CA1978 A IN139CA1978 A IN 139CA1978A IN 149647 B IN149647 B IN 149647B
Authority
IN
India
Application number
IN139/CAL/78A
Inventor
Yu Chang Kao
L Saxon
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of IN149647B publication Critical patent/IN149647B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839Cathode regions of thyristors
IN139/CAL/78A 1977-03-21 1978-02-07 IN149647B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77944777A 1977-03-21 1977-03-21

Publications (1)

Publication Number Publication Date
IN149647B true IN149647B (en) 1982-02-27

Family

ID=25116481

Family Applications (1)

Application Number Title Priority Date Filing Date
IN139/CAL/78A IN149647B (en) 1977-03-21 1978-02-07

Country Status (8)

Country Link
JP (1) JPS53116082A (en)
BE (1) BE865003A (en)
BR (1) BR7801555A (en)
CA (1) CA1108309A (en)
DE (1) DE2811760A1 (en)
FR (1) FR2385226A1 (en)
GB (1) GB1602216A (en)
IN (1) IN149647B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222571A (en) * 1982-06-19 1983-12-24 Mitsubishi Electric Corp Thyristor
JP3225334B2 (en) * 1995-06-14 2001-11-05 株式会社新川 Lead frame detection device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2254880B1 (en) * 1973-12-12 1978-11-10 Alsthom Cgee
JPS5155677A (en) * 1974-11-11 1976-05-15 Hitachi Ltd HANDOTAISEIGYOSEIRYUSOCHI
GB1546094A (en) * 1975-04-11 1979-05-16 Aei Semiconductors Ltd Thyristors
DE2520134C3 (en) * 1975-05-06 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor with a rectangular semiconductor element

Also Published As

Publication number Publication date
CA1108309A (en) 1981-09-01
DE2811760A1 (en) 1978-09-28
JPS53116082A (en) 1978-10-11
GB1602216A (en) 1981-11-11
BR7801555A (en) 1978-10-31
FR2385226A1 (en) 1978-10-20
BE865003A (en) 1978-09-18

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