DE2757931A1 - Verfahren zum herstellen von positiven aetzresistenten masken - Google Patents

Verfahren zum herstellen von positiven aetzresistenten masken

Info

Publication number
DE2757931A1
DE2757931A1 DE19772757931 DE2757931A DE2757931A1 DE 2757931 A1 DE2757931 A1 DE 2757931A1 DE 19772757931 DE19772757931 DE 19772757931 DE 2757931 A DE2757931 A DE 2757931A DE 2757931 A1 DE2757931 A1 DE 2757931A1
Authority
DE
Germany
Prior art keywords
radiation
copolymers
methacrylic acid
positive
meth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19772757931
Other languages
German (de)
English (en)
Other versions
DE2757931C2 (enExample
Inventor
Juergen Dr Ing Hersener
Alfred Wilhalm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE19772757931 priority Critical patent/DE2757931A1/de
Priority to JP15502678A priority patent/JPS5489949A/ja
Publication of DE2757931A1 publication Critical patent/DE2757931A1/de
Application granted granted Critical
Publication of DE2757931C2 publication Critical patent/DE2757931C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • ing And Chemical Polishing (AREA)
DE19772757931 1977-12-24 1977-12-24 Verfahren zum herstellen von positiven aetzresistenten masken Granted DE2757931A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE19772757931 DE2757931A1 (de) 1977-12-24 1977-12-24 Verfahren zum herstellen von positiven aetzresistenten masken
JP15502678A JPS5489949A (en) 1977-12-24 1978-12-18 Method of making antiicorrosive positive mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772757931 DE2757931A1 (de) 1977-12-24 1977-12-24 Verfahren zum herstellen von positiven aetzresistenten masken

Publications (2)

Publication Number Publication Date
DE2757931A1 true DE2757931A1 (de) 1979-07-12
DE2757931C2 DE2757931C2 (enExample) 1989-09-21

Family

ID=6027223

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772757931 Granted DE2757931A1 (de) 1977-12-24 1977-12-24 Verfahren zum herstellen von positiven aetzresistenten masken

Country Status (2)

Country Link
JP (1) JPS5489949A (enExample)
DE (1) DE2757931A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5695659A (en) * 1995-11-27 1997-12-09 United Technologies Corporation Process for removing a protective coating from a surface of an airfoil

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649393A (en) * 1970-06-12 1972-03-14 Ibm Variable depth etching of film layers using variable exposures of photoresists
DE2363092A1 (de) * 1972-12-21 1974-07-04 Philips Nv Positiv wirkende elektronenreserve
DE2610301A1 (de) * 1975-03-20 1976-09-30 Philips Nv Positiv wirkender photolack
DE2642269A1 (de) * 1975-09-26 1977-03-31 Ibm Verfahren zur herstellung eines positiven resistbildes

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649393A (en) * 1970-06-12 1972-03-14 Ibm Variable depth etching of film layers using variable exposures of photoresists
DE2363092A1 (de) * 1972-12-21 1974-07-04 Philips Nv Positiv wirkende elektronenreserve
DE2610301A1 (de) * 1975-03-20 1976-09-30 Philips Nv Positiv wirkender photolack
DE2642269A1 (de) * 1975-09-26 1977-03-31 Ibm Verfahren zur herstellung eines positiven resistbildes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DE-Z.: Galvanotechnik 65, 1974, Nr. 2, S.94 *

Also Published As

Publication number Publication date
JPS5489949A (en) 1979-07-17
DE2757931C2 (enExample) 1989-09-21

Similar Documents

Publication Publication Date Title
EP0026820B1 (de) Verfahren zur Herstellung hochwärmebeständiger Reliefstrukturen, danach hergestellte Reliefstrukturen und deren Verwendung
EP0143437B1 (de) Verfahren zur Herstellung von Resistmustern und für dieses Verfahren geeigneter Trockenresist
US3987215A (en) Resist mask formation process
DE2735377A1 (de) Verfahren zur herstellung modifizierter substrate sowie zwischenprodukte dieses verfahrens
DE2314124B2 (de) Verfahren zur Herstellung eines Polymermusters unter Verwendung von Elektronenstrahl-empfindlichem Polymermaterial
EP0368800A2 (de) Positiv-Fotoresists vom Polyimid-Typ
EP0157930B1 (de) Verfahren zur Herstellung von Polyimid- und Polyisoindolochinazolindion-Reliefstrukturen
DE2313467A1 (de) Verfahren zur erzeugung eines gemusterten reliefbildes
EP0048899B1 (de) Verfahren zur Herstellung von Resiststrukturen
EP0333655A2 (de) Negativ-Fotoresists vom Polyimid-Typ mit 1,2-Disulfonen
US3794510A (en) Electron beam masking method
DE2819482A1 (de) Elektrolithographisches verfahren
US4346163A (en) Resist for use in forming a positive pattern with a radiation and process for forming a positive pattern with radiation
EP0271010B1 (de) Copolymerisate mit 0-Nitrocarbinolestergruppierungen und deren Verwendung
DE2757931A1 (de) Verfahren zum herstellen von positiven aetzresistenten masken
EP0143380B1 (de) Fotoresist-Zusammensetzungen
DE3411714A1 (de) Verfahren zur herstellung von polyimidazol- und polyimidazopyrrolon-reliefstrukturen
US3985915A (en) Use of nitrocellulose containing 10.5 to 12% nitrogen as electron beam positive resists
DE2642269C2 (de) Aufzeichnungsmaterial zur Herstellung eines positiven Resistbildes
DE2321684C3 (de) Verfahren zum Erzeugen von Mustern
US4243742A (en) Radiation-sensitive positively acting materials
DE2933871A1 (de) Verfahren zur herstellung hochwaermebestaendiger reliefstrukturen und deren verwendung.
DE2828128A1 (de) Strahlungsempfindliche positiv arbeitende materialien
EP0330209B1 (de) Photoreaktive Polymere und Verfahren zur Herstellung eines Zweilagenresists
EP0111799A1 (de) Verfahren zur Entwicklung von Reliefstrukturen auf der Basis von strahlungsvernetzten Polymervorstufen hochwärmebeständiger Polymere

Legal Events

Date Code Title Description
OAR Request for search filed
OB Request for examination as to novelty
OF Willingness to grant licences before publication of examined application
OC Search report available
8110 Request for examination paragraph 44
8181 Inventor (new situation)

Free format text: HERSENER, JUERGEN, DR.-ING. WILHELM, ALFRED, 7900 ULM, DE

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee