DE2752448C2 - Elektronenstrahl-Lithographieverfahren - Google Patents
Elektronenstrahl-LithographieverfahrenInfo
- Publication number
- DE2752448C2 DE2752448C2 DE2752448A DE2752448A DE2752448C2 DE 2752448 C2 DE2752448 C2 DE 2752448C2 DE 2752448 A DE2752448 A DE 2752448A DE 2752448 A DE2752448 A DE 2752448A DE 2752448 C2 DE2752448 C2 DE 2752448C2
- Authority
- DE
- Germany
- Prior art keywords
- pattern
- areas
- electron beam
- irradiated
- irradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 22
- 238000000609 electron-beam lithography Methods 0.000 title claims description 8
- 230000005855 radiation Effects 0.000 claims description 13
- 238000010894 electron beam technology Methods 0.000 claims description 12
- 239000004922 lacquer Substances 0.000 claims description 10
- 239000003973 paint Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 2
- AOGQPLXWSUTHQB-UHFFFAOYSA-N hexyl acetate Chemical compound CCCCCCOC(C)=O AOGQPLXWSUTHQB-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 150000003459 sulfonic acid esters Chemical class 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31793—Problems associated with lithography
- H01J2237/31796—Problems associated with lithography affecting resists
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Manufacture Or Reproduction Of Printing Formes (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/754,310 US4099062A (en) | 1976-12-27 | 1976-12-27 | Electron beam lithography process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2752448A1 DE2752448A1 (de) | 1978-06-29 |
| DE2752448C2 true DE2752448C2 (de) | 1984-08-30 |
Family
ID=25034242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2752448A Expired DE2752448C2 (de) | 1976-12-27 | 1977-11-24 | Elektronenstrahl-Lithographieverfahren |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4099062A (en:Method) |
| JP (1) | JPS5382176A (en:Method) |
| DE (1) | DE2752448C2 (en:Method) |
| FR (1) | FR2375665A1 (en:Method) |
| GB (1) | GB1590071A (en:Method) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5463681A (en) * | 1977-10-29 | 1979-05-22 | Nippon Aviotronics Kk | Electron beam exposure device |
| DE3175019D1 (en) * | 1980-04-02 | 1986-09-04 | Hitachi Ltd | Method of forming patterns |
| US4494004A (en) * | 1980-11-28 | 1985-01-15 | International Business Machines Corporation | Electron beam system |
| JPS5834918A (ja) * | 1981-08-26 | 1983-03-01 | Fujitsu Ltd | 電子ビ−ム露光方法 |
| JPS58210617A (ja) * | 1982-05-31 | 1983-12-07 | Toshiba Corp | 電子ビ−ム描画方法 |
| JPS58210616A (ja) * | 1982-05-31 | 1983-12-07 | Toshiba Corp | 電子ビ−ム描画方法 |
| JPS593923A (ja) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | 電子ビ−ム露光方法 |
| JPS594017A (ja) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | 電子ビ−ム露光方法 |
| US4712013A (en) * | 1984-09-29 | 1987-12-08 | Kabushiki Kaisha Toshiba | Method of forming a fine pattern with a charged particle beam |
| US4816692A (en) * | 1987-07-08 | 1989-03-28 | International Business Machines Corporation | Pattern splicing system and method for scanning of electron beam system |
| DE3744308A1 (de) * | 1987-12-28 | 1989-07-06 | Bbc Brown Boveri & Cie | Leistungshalbleiter-bauelement sowie verfahren zu dessen herstellung |
| KR920004910B1 (ko) * | 1988-09-16 | 1992-06-22 | 삼성전자 주식회사 | 반도체 장치의 최소 접속창 형성방법 |
| US5051598A (en) * | 1990-09-12 | 1991-09-24 | International Business Machines Corporation | Method for correcting proximity effects in electron beam lithography |
| US5309354A (en) * | 1991-10-30 | 1994-05-03 | International Business Machines Corporation | Electron beam exposure method |
| EP0608657A1 (en) * | 1993-01-29 | 1994-08-03 | International Business Machines Corporation | Apparatus and method for preparing shape data for proximity correction |
| JP3085454B2 (ja) * | 1997-03-13 | 2000-09-11 | 日本電気株式会社 | 荷電粒子線露光方法 |
| CN101421667B (zh) * | 2006-01-30 | 2013-06-05 | 3Dcd有限责任公司 | 光学可变器件母版制作系统、利用该系统鉴别物品的方法以及得到的物品 |
| US8530148B2 (en) * | 2006-12-25 | 2013-09-10 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
| JP4554665B2 (ja) * | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液 |
| US8637229B2 (en) * | 2006-12-25 | 2014-01-28 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
| EP2138898B1 (en) | 2007-04-13 | 2014-05-21 | FUJIFILM Corporation | Method for pattern formation, and use of resist composition in said method |
| US8034547B2 (en) * | 2007-04-13 | 2011-10-11 | Fujifilm Corporation | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method |
| US8603733B2 (en) | 2007-04-13 | 2013-12-10 | Fujifilm Corporation | Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method |
| US8476001B2 (en) | 2007-05-15 | 2013-07-02 | Fujifilm Corporation | Pattern forming method |
| JP4558064B2 (ja) * | 2007-05-15 | 2010-10-06 | 富士フイルム株式会社 | パターン形成方法 |
| US8632942B2 (en) | 2007-06-12 | 2014-01-21 | Fujifilm Corporation | Method of forming patterns |
| JP4590431B2 (ja) * | 2007-06-12 | 2010-12-01 | 富士フイルム株式会社 | パターン形成方法 |
| JP4617337B2 (ja) * | 2007-06-12 | 2011-01-26 | 富士フイルム株式会社 | パターン形成方法 |
| JP4783853B2 (ja) * | 2007-06-12 | 2011-09-28 | 富士フイルム株式会社 | ネガ型現像用レジスト組成物を用いたパターン形成方法 |
| US8617794B2 (en) | 2007-06-12 | 2013-12-31 | Fujifilm Corporation | Method of forming patterns |
| JP5767919B2 (ja) * | 2010-09-17 | 2015-08-26 | 富士フイルム株式会社 | パターン形成方法 |
| US8539392B2 (en) | 2011-02-24 | 2013-09-17 | National Taiwan University | Method for compensating proximity effects of particle beam lithography processes |
| JP6025600B2 (ja) * | 2013-02-19 | 2016-11-16 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜及びパターン形成方法 |
| JP2015050439A (ja) * | 2013-09-04 | 2015-03-16 | 株式会社東芝 | 描画データの補正方法、描画方法、及びリソグラフィ用のマスク又はテンプレートの製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3535137A (en) * | 1967-01-13 | 1970-10-20 | Ibm | Method of fabricating etch resistant masks |
| DE1960463A1 (de) * | 1969-12-02 | 1971-06-09 | Licentia Gmbh | Verfahren zum fehlerfreien fotografischen UEbertragen |
| US3644700A (en) * | 1969-12-15 | 1972-02-22 | Ibm | Method and apparatus for controlling an electron beam |
| DE2143737A1 (de) * | 1971-09-01 | 1973-03-08 | Ibm Deutschland | Photoaetzverfahren |
| US3949228A (en) * | 1973-09-19 | 1976-04-06 | Ibm Corporation | Method for controlling an electron beam |
| US3866013A (en) * | 1973-09-19 | 1975-02-11 | Ibm | Method and apparatus for controlling movable means such as an electron beam |
| US3987215A (en) * | 1974-04-22 | 1976-10-19 | International Business Machines Corporation | Resist mask formation process |
| DE2421079A1 (de) * | 1974-05-02 | 1975-11-13 | Licentia Gmbh | Verfahren zur bearbeitung mit einem elektronen- oder ionenstrahl |
-
1976
- 1976-12-27 US US05/754,310 patent/US4099062A/en not_active Expired - Lifetime
-
1977
- 1977-11-08 GB GB46400/77A patent/GB1590071A/en not_active Expired
- 1977-11-15 JP JP13635777A patent/JPS5382176A/ja active Granted
- 1977-11-21 FR FR7735962A patent/FR2375665A1/fr active Granted
- 1977-11-24 DE DE2752448A patent/DE2752448C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4099062A (en) | 1978-07-04 |
| FR2375665A1 (fr) | 1978-07-21 |
| FR2375665B1 (en:Method) | 1980-08-22 |
| DE2752448A1 (de) | 1978-06-29 |
| JPS5343017B2 (en:Method) | 1978-11-16 |
| GB1590071A (en) | 1981-05-28 |
| JPS5382176A (en) | 1978-07-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |