DE2749207C2 - Anordnung zum Aufbringen einer Substanzschicht auf einem Substrat mittels Mulekularstrahlen - Google Patents
Anordnung zum Aufbringen einer Substanzschicht auf einem Substrat mittels MulekularstrahlenInfo
- Publication number
- DE2749207C2 DE2749207C2 DE2749207A DE2749207A DE2749207C2 DE 2749207 C2 DE2749207 C2 DE 2749207C2 DE 2749207 A DE2749207 A DE 2749207A DE 2749207 A DE2749207 A DE 2749207A DE 2749207 C2 DE2749207 C2 DE 2749207C2
- Authority
- DE
- Germany
- Prior art keywords
- evaporation
- molecules
- molecular beams
- applying
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000126 substance Substances 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 title claims description 7
- 238000001704 evaporation Methods 0.000 claims description 26
- 230000008020 evaporation Effects 0.000 claims description 25
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 238000010606 normalization Methods 0.000 claims description 3
- 230000008016 vaporization Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 6
- 239000000523 sample Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910017214 AsGa Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S118/00—Coating apparatus
- Y10S118/90—Semiconductor vapor doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/006—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7633471A FR2370320A1 (fr) | 1976-11-05 | 1976-11-05 | Systeme de regulation de flux moleculaires, et son application aux techniques de co-evaporation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2749207A1 DE2749207A1 (de) | 1978-05-18 |
| DE2749207C2 true DE2749207C2 (de) | 1984-06-14 |
Family
ID=9179603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2749207A Expired DE2749207C2 (de) | 1976-11-05 | 1977-11-03 | Anordnung zum Aufbringen einer Substanzschicht auf einem Substrat mittels Mulekularstrahlen |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4160166A (https=) |
| DE (1) | DE2749207C2 (https=) |
| FR (1) | FR2370320A1 (https=) |
| GB (1) | GB1545666A (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4172020A (en) * | 1978-05-24 | 1979-10-23 | Gould Inc. | Method and apparatus for monitoring and controlling sputter deposition processes |
| JPS60225422A (ja) * | 1984-04-24 | 1985-11-09 | Hitachi Ltd | 薄膜形成方法およびその装置 |
| GB2158843A (en) * | 1984-05-14 | 1985-11-20 | Philips Electronic Associated | Method of manufacturing a semiconductor device by molecular beam epitaxy |
| GB2162207B (en) * | 1984-07-26 | 1989-05-10 | Japan Res Dev Corp | Semiconductor crystal growth apparatus |
| US5099557A (en) * | 1988-07-08 | 1992-03-31 | Engelsberg Audrey C | Removal of surface contaminants by irradiation from a high-energy source |
| US5821175A (en) * | 1988-07-08 | 1998-10-13 | Cauldron Limited Partnership | Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface |
| US5531857A (en) * | 1988-07-08 | 1996-07-02 | Cauldron Limited Partnership | Removal of surface contaminants by irradiation from a high energy source |
| AU7682594A (en) * | 1993-09-08 | 1995-03-27 | Uvtech Systems, Inc. | Surface processing |
| US5814156A (en) * | 1993-09-08 | 1998-09-29 | Uvtech Systems Inc. | Photoreactive surface cleaning |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3316386A (en) * | 1964-05-20 | 1967-04-25 | Bendix Corp | Multiple evaporation rate monitor and control |
| US3654109A (en) * | 1968-04-25 | 1972-04-04 | Ibm | Apparatus and method for measuring rate in flow processes |
-
1976
- 1976-11-05 FR FR7633471A patent/FR2370320A1/fr active Granted
-
1977
- 1977-11-02 US US05/847,907 patent/US4160166A/en not_active Expired - Lifetime
- 1977-11-02 GB GB45646/77A patent/GB1545666A/en not_active Expired
- 1977-11-03 DE DE2749207A patent/DE2749207C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1545666A (en) | 1979-05-10 |
| FR2370320A1 (fr) | 1978-06-02 |
| DE2749207A1 (de) | 1978-05-18 |
| FR2370320B1 (https=) | 1979-03-30 |
| US4160166A (en) | 1979-07-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8125 | Change of the main classification |
Ipc: H01J 49/26 |
|
| D2 | Grant after examination | ||
| 8363 | Opposition against the patent | ||
| 8331 | Complete revocation |