DE2743950C2 - Vorrichtung zum Abscheiden von Halbleitermaterial - Google Patents
Vorrichtung zum Abscheiden von HalbleitermaterialInfo
- Publication number
- DE2743950C2 DE2743950C2 DE2743950A DE2743950A DE2743950C2 DE 2743950 C2 DE2743950 C2 DE 2743950C2 DE 2743950 A DE2743950 A DE 2743950A DE 2743950 A DE2743950 A DE 2743950A DE 2743950 C2 DE2743950 C2 DE 2743950C2
- Authority
- DE
- Germany
- Prior art keywords
- tube
- base plate
- observation window
- gas
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000000151 deposition Methods 0.000 title claims description 11
- 239000000463 material Substances 0.000 title claims description 9
- 239000010453 quartz Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 229910000831 Steel Inorganic materials 0.000 claims description 9
- 239000010959 steel Substances 0.000 claims description 9
- 239000012495 reaction gas Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 230000008021 deposition Effects 0.000 description 7
- 238000009529 body temperature measurement Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005494 tarnishing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2743950A DE2743950C2 (de) | 1977-09-29 | 1977-09-29 | Vorrichtung zum Abscheiden von Halbleitermaterial |
| IN958/CAL/78A IN149401B (US20090163788A1-20090625-C00002.png) | 1977-09-29 | 1978-08-31 | |
| PL1978209746A PL115365B1 (en) | 1977-09-29 | 1978-09-21 | Apparatus for manufacturing a semiconductive material |
| JP11986878A JPS5458350A (en) | 1977-09-29 | 1978-09-28 | Device for depositing semiconductor material |
| BR7806432A BR7806432A (pt) | 1977-09-29 | 1978-09-28 | Processo e instalacao para deposicao de material semicondutor |
| IT28167/78A IT1099206B (it) | 1977-09-29 | 1978-09-28 | Procedimento e dispositivo per la deposizione di materiale semiconduttore |
| SU2667252A SU810086A3 (ru) | 1977-09-29 | 1978-09-29 | Устройство дл получени полупроводниковогоМАТЕРиАлА |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2743950A DE2743950C2 (de) | 1977-09-29 | 1977-09-29 | Vorrichtung zum Abscheiden von Halbleitermaterial |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2743950A1 DE2743950A1 (de) | 1979-04-12 |
| DE2743950C2 true DE2743950C2 (de) | 1987-02-12 |
Family
ID=6020264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2743950A Expired DE2743950C2 (de) | 1977-09-29 | 1977-09-29 | Vorrichtung zum Abscheiden von Halbleitermaterial |
Country Status (7)
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3107421C2 (de) * | 1981-02-27 | 1985-02-14 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Glocke aus Quarzgut für die Abscheidung von Poly-Silizium |
| JPH0239525A (ja) * | 1988-07-29 | 1990-02-08 | Hitachi Ltd | 半導体熱処理装置 |
| US8613358B2 (en) | 2010-03-18 | 2013-12-24 | Jong Soo Park | Structure for detachable coupling of containers |
| US9656782B2 (en) | 2010-03-18 | 2017-05-23 | Jong Soo Park | Structure for detachable coupling of containers |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1221612B (de) * | 1962-09-15 | 1966-07-28 | Siemens Ag | Vorrichtung zum Konstanthalten der Temperatur eines bei einer pyrolitischen Zersetzung einer Halbleiterverbindung benutzten Traegers |
| GB1209580A (en) * | 1969-03-17 | 1970-10-21 | Hamco Mach & Elect Co | Automatic control for crystal growing apparatus |
| DE2518853C3 (de) * | 1975-04-28 | 1979-03-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas |
-
1977
- 1977-09-29 DE DE2743950A patent/DE2743950C2/de not_active Expired
-
1978
- 1978-08-31 IN IN958/CAL/78A patent/IN149401B/en unknown
- 1978-09-21 PL PL1978209746A patent/PL115365B1/pl unknown
- 1978-09-28 BR BR7806432A patent/BR7806432A/pt unknown
- 1978-09-28 IT IT28167/78A patent/IT1099206B/it active
- 1978-09-28 JP JP11986878A patent/JPS5458350A/ja active Granted
- 1978-09-29 SU SU2667252A patent/SU810086A3/ru active
Also Published As
| Publication number | Publication date |
|---|---|
| IT7828167A0 (it) | 1978-09-28 |
| BR7806432A (pt) | 1979-05-08 |
| IT1099206B (it) | 1985-09-18 |
| JPS5639048B2 (US20090163788A1-20090625-C00002.png) | 1981-09-10 |
| JPS5458350A (en) | 1979-05-11 |
| PL209746A1 (pl) | 1979-06-04 |
| DE2743950A1 (de) | 1979-04-12 |
| IN149401B (US20090163788A1-20090625-C00002.png) | 1981-11-28 |
| PL115365B1 (en) | 1981-03-31 |
| SU810086A3 (ru) | 1981-02-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |