IT7828167A0 - Semiconduttore. procedimento e dispositivo per la deposizione di materiale - Google Patents
Semiconduttore. procedimento e dispositivo per la deposizione di materialeInfo
- Publication number
- IT7828167A0 IT7828167A0 IT7828167A IT2816778A IT7828167A0 IT 7828167 A0 IT7828167 A0 IT 7828167A0 IT 7828167 A IT7828167 A IT 7828167A IT 2816778 A IT2816778 A IT 2816778A IT 7828167 A0 IT7828167 A0 IT 7828167A0
- Authority
- IT
- Italy
- Prior art keywords
- deposition
- semiconductor
- procedure
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19772743950 DE2743950A1 (de) | 1977-09-29 | 1977-09-29 | Verfahren und vorrichtung zum abscheiden von halbleitermaterial |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7828167A0 true IT7828167A0 (it) | 1978-09-28 |
IT1099206B IT1099206B (it) | 1985-09-18 |
Family
ID=6020264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT28167/78A IT1099206B (it) | 1977-09-29 | 1978-09-28 | Procedimento e dispositivo per la deposizione di materiale semiconduttore |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5458350A (it) |
BR (1) | BR7806432A (it) |
DE (1) | DE2743950A1 (it) |
IN (1) | IN149401B (it) |
IT (1) | IT1099206B (it) |
PL (1) | PL115365B1 (it) |
SU (1) | SU810086A3 (it) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3107421C2 (de) * | 1981-02-27 | 1985-02-14 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Glocke aus Quarzgut für die Abscheidung von Poly-Silizium |
JPH0239525A (ja) * | 1988-07-29 | 1990-02-08 | Hitachi Ltd | 半導体熱処理装置 |
US9656782B2 (en) | 2010-03-18 | 2017-05-23 | Jong Soo Park | Structure for detachable coupling of containers |
US8613358B2 (en) | 2010-03-18 | 2013-12-24 | Jong Soo Park | Structure for detachable coupling of containers |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1221612B (de) * | 1962-09-15 | 1966-07-28 | Siemens Ag | Vorrichtung zum Konstanthalten der Temperatur eines bei einer pyrolitischen Zersetzung einer Halbleiterverbindung benutzten Traegers |
GB1209580A (en) * | 1969-03-17 | 1970-10-21 | Hamco Mach & Elect Co | Automatic control for crystal growing apparatus |
DE2518853C3 (de) * | 1975-04-28 | 1979-03-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas |
-
1977
- 1977-09-29 DE DE19772743950 patent/DE2743950A1/de active Granted
-
1978
- 1978-08-31 IN IN958/CAL/78A patent/IN149401B/en unknown
- 1978-09-21 PL PL1978209746A patent/PL115365B1/pl unknown
- 1978-09-28 BR BR7806432A patent/BR7806432A/pt unknown
- 1978-09-28 IT IT28167/78A patent/IT1099206B/it active
- 1978-09-28 JP JP11986878A patent/JPS5458350A/ja active Granted
- 1978-09-29 SU SU2667252A patent/SU810086A3/ru active
Also Published As
Publication number | Publication date |
---|---|
IN149401B (it) | 1981-11-28 |
PL115365B1 (en) | 1981-03-31 |
IT1099206B (it) | 1985-09-18 |
BR7806432A (pt) | 1979-05-08 |
JPS5458350A (en) | 1979-05-11 |
PL209746A1 (pl) | 1979-06-04 |
SU810086A3 (ru) | 1981-02-28 |
JPS5639048B2 (it) | 1981-09-10 |
DE2743950A1 (de) | 1979-04-12 |
DE2743950C2 (it) | 1987-02-12 |
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