DE2743641A1 - Verfahren und vorrichtung zum herstellen von amorphen halbleitervorrichtungen - Google Patents

Verfahren und vorrichtung zum herstellen von amorphen halbleitervorrichtungen

Info

Publication number
DE2743641A1
DE2743641A1 DE19772743641 DE2743641A DE2743641A1 DE 2743641 A1 DE2743641 A1 DE 2743641A1 DE 19772743641 DE19772743641 DE 19772743641 DE 2743641 A DE2743641 A DE 2743641A DE 2743641 A1 DE2743641 A1 DE 2743641A1
Authority
DE
Germany
Prior art keywords
layer
electrode
active
amorphous
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19772743641
Other languages
German (de)
English (en)
Inventor
Pierre Kumurdjian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7629105A external-priority patent/FR2365888A1/fr
Priority claimed from FR7712750A external-priority patent/FR2389239A2/fr
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE2743641A1 publication Critical patent/DE2743641A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/90—Bulk effect device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Secondary Cells (AREA)
DE19772743641 1976-09-28 1977-09-28 Verfahren und vorrichtung zum herstellen von amorphen halbleitervorrichtungen Withdrawn DE2743641A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7629105A FR2365888A1 (fr) 1976-09-28 1976-09-28 Procede de realisation de dispositifs semi-conducteurs amorphes et dispositifs en faisant application
FR7712750A FR2389239A2 (fr) 1977-04-27 1977-04-27 Procede de realisation de dispositifs semiconducteurs amorphes et dispositifs en faisant application

Publications (1)

Publication Number Publication Date
DE2743641A1 true DE2743641A1 (de) 1978-03-30

Family

ID=26219643

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772743641 Withdrawn DE2743641A1 (de) 1976-09-28 1977-09-28 Verfahren und vorrichtung zum herstellen von amorphen halbleitervorrichtungen

Country Status (4)

Country Link
US (1) US4167806A (enExample)
JP (1) JPS5342573A (enExample)
DE (1) DE2743641A1 (enExample)
GB (1) GB1592304A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683050A (en) * 1979-12-12 1981-07-07 Toshiba Corp Semiconductor device
FR2478879A1 (fr) * 1980-03-24 1981-09-25 Commissariat Energie Atomique Procede de realisation de dispositifs a effet memoire a semi-conducteurs amorphes
JPS5766674A (en) * 1980-10-09 1982-04-22 Toshiba Corp Semiconductor device
US4433342A (en) * 1981-04-06 1984-02-21 Harris Corporation Amorphous switching device with residual crystallization retardation
FR2533072B1 (fr) * 1982-09-14 1986-07-18 Coissard Pierre Procede de fabrication de circuits electroniques a base de transistors en couches minces et de condensateurs
JPS61216360A (ja) * 1985-03-20 1986-09-26 Fuji Electric Co Ltd 密着型イメ−ジセンサ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3346788A (en) * 1965-06-15 1967-10-10 Texas Instruments Inc Gallium arsenide transistor and methods of making same
US3590479A (en) * 1968-10-28 1971-07-06 Texas Instruments Inc Method for making ambient atmosphere isolated semiconductor devices
US3893229A (en) * 1973-10-29 1975-07-08 Gen Electric Mounting for light-emitting diode pellet and method for the fabrication thereof
US4095330A (en) * 1976-08-30 1978-06-20 Raytheon Company Composite semiconductor integrated circuit and method of manufacture

Also Published As

Publication number Publication date
US4167806A (en) 1979-09-18
GB1592304A (en) 1981-07-01
JPS6123678B2 (enExample) 1986-06-06
JPS5342573A (en) 1978-04-18

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Legal Events

Date Code Title Description
8141 Disposal/no request for examination