DE2730373C2 - - Google Patents

Info

Publication number
DE2730373C2
DE2730373C2 DE2730373A DE2730373A DE2730373C2 DE 2730373 C2 DE2730373 C2 DE 2730373C2 DE 2730373 A DE2730373 A DE 2730373A DE 2730373 A DE2730373 A DE 2730373A DE 2730373 C2 DE2730373 C2 DE 2730373C2
Authority
DE
Germany
Prior art keywords
zone
semiconductor
transistor
type semiconductor
inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE2730373A
Other languages
German (de)
English (en)
Other versions
DE2730373A1 (de
Inventor
Jun-Ichi Sendai Miyagi Jp Nishizawa
Yasunori Mochida
Terumoto Nonaka
Takashi Hamamatsu Shizuoka Jp Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yamaha Corp
Original Assignee
Yamaha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamaha Corp filed Critical Yamaha Corp
Publication of DE2730373A1 publication Critical patent/DE2730373A1/de
Application granted granted Critical
Publication of DE2730373C2 publication Critical patent/DE2730373C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Logic Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19772730373 1976-07-05 1977-07-05 Integrierte halbleiter-logikschaltung Granted DE2730373A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51079578A JPS608628B2 (ja) 1976-07-05 1976-07-05 半導体集積回路装置

Publications (2)

Publication Number Publication Date
DE2730373A1 DE2730373A1 (de) 1978-01-19
DE2730373C2 true DE2730373C2 (fr) 1992-04-30

Family

ID=13693860

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772730373 Granted DE2730373A1 (de) 1976-07-05 1977-07-05 Integrierte halbleiter-logikschaltung

Country Status (7)

Country Link
US (1) US4700213A (fr)
JP (1) JPS608628B2 (fr)
CA (1) CA1118531A (fr)
DE (1) DE2730373A1 (fr)
FR (1) FR2358025A1 (fr)
GB (1) GB1580471A (fr)
NL (1) NL7707382A (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5838938B2 (ja) * 1976-08-03 1983-08-26 財団法人半導体研究振興会 半導体集積回路
CH631298A5 (de) * 1977-01-10 1982-07-30 Kremlev V J Integrierte logische schaltung.
JPS5389687A (en) * 1977-01-18 1978-08-07 Handotai Kenkyu Shinkokai Electrostatic induction transistor ic
NL191525C (nl) 1977-02-02 1995-08-21 Shinkokai Zaidan Hojin Handot Halfgeleiderinrichting omvattende een stroomkanaalgebied van een eerste geleidingstype dat wordt omsloten door een van een stuurelektrode voorzien stuurgebied van het tweede geleidingstype.
DE2858820C2 (de) * 1977-02-02 1996-09-19 Zaidan Hojin Handotai Kenkyu I·2·L-Schaltungsstruktur
JPS5466080A (en) * 1977-11-05 1979-05-28 Nippon Gakki Seizo Kk Semiconductor device
JPS5546548A (en) * 1978-09-28 1980-04-01 Semiconductor Res Found Electrostatic induction integrated circuit
FR2457605A2 (fr) * 1979-05-21 1980-12-19 France Etat Perfectionnements aux portes logiques a transistors mos multidrains
JPS607228A (ja) * 1983-06-25 1985-01-16 Toshiba Corp 半導体論理回路
JPS6453443A (en) * 1988-07-30 1989-03-01 Semiconductor Res Found Gaas semiconductor device
FR2640829B1 (fr) * 1988-12-20 1991-02-08 Thomson Hybrides Microondes Dispositif pour la modulation ou la demodulation directe en hyperfrequences
JP3086713B2 (ja) * 1991-05-10 2000-09-11 株式会社豊田自動織機製作所 静電誘導形半導体装置
US5321283A (en) * 1991-07-30 1994-06-14 Microwave Technology, Inc. High frequency JFET
EP0654827A1 (fr) * 1993-05-26 1995-05-24 Texas Instruments Incorporated Cascode intégré de puissance
FI20160183L (fi) * 2016-07-14 2016-07-15 Artto Mikael Aurola Parannettu puolijohdekokoonpano

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU47903A1 (ru) * 1935-07-13 1936-07-31 Н.И. Жохов Лыжные шасси дл самолета
US3401319A (en) * 1966-03-08 1968-09-10 Gen Micro Electronics Inc Integrated latch circuit
NL7107040A (fr) * 1971-05-22 1972-11-24
US3969632A (en) * 1971-07-06 1976-07-13 Thomson-Csf Logic circuits-employing junction-type field-effect transistors
JPS5217720B1 (fr) * 1971-07-31 1977-05-17
US3924265A (en) * 1973-08-29 1975-12-02 American Micro Syst Low capacitance V groove MOS NOR gate and method of manufacture
JPS5811102B2 (ja) * 1975-12-09 1983-03-01 ザイダンホウジン ハンドウタイケンキユウシンコウカイ 半導体集積回路
JPS52128082A (en) * 1976-04-20 1977-10-27 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture
JPS5923114B2 (ja) * 1976-06-17 1984-05-30 松下電器産業株式会社 半導体装置
JPS6022504B2 (ja) * 1976-06-18 1985-06-03 松下電器産業株式会社 半導体装置の製造方法
JPS5325375A (en) * 1976-07-31 1978-03-09 Nippon Gakki Seizo Kk Semiconductor integrated circuit devi ce

Also Published As

Publication number Publication date
FR2358025B1 (fr) 1983-04-01
CA1118531A (fr) 1982-02-16
JPS608628B2 (ja) 1985-03-04
US4700213A (en) 1987-10-13
FR2358025A1 (fr) 1978-02-03
DE2730373A1 (de) 1978-01-19
JPS535585A (en) 1978-01-19
NL7707382A (nl) 1978-01-09
GB1580471A (en) 1980-12-03

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