DE2702935A1 - Licht emittierendes halbleiterelement - Google Patents
Licht emittierendes halbleiterelementInfo
- Publication number
- DE2702935A1 DE2702935A1 DE19772702935 DE2702935A DE2702935A1 DE 2702935 A1 DE2702935 A1 DE 2702935A1 DE 19772702935 DE19772702935 DE 19772702935 DE 2702935 A DE2702935 A DE 2702935A DE 2702935 A1 DE2702935 A1 DE 2702935A1
- Authority
- DE
- Germany
- Prior art keywords
- light
- layer
- emitting
- junction
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 150000001875 compounds Chemical class 0.000 claims description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 11
- 125000005842 heteroatom Chemical group 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 17
- 239000013078 crystal Substances 0.000 description 13
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 230000012010 growth Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000004891 communication Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000013307 optical fiber Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000000155 melt Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000776A JPS52104091A (en) | 1976-02-27 | 1976-02-27 | Light-emitting semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2702935A1 true DE2702935A1 (de) | 1977-09-01 |
Family
ID=12015056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19772702935 Pending DE2702935A1 (de) | 1976-02-27 | 1977-01-25 | Licht emittierendes halbleiterelement |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4122486A (enExample) |
| JP (1) | JPS52104091A (enExample) |
| DE (1) | DE2702935A1 (enExample) |
| FR (1) | FR2342560A1 (enExample) |
| GB (1) | GB1540004A (enExample) |
| NL (1) | NL7701379A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0051172A1 (de) * | 1980-11-03 | 1982-05-12 | Siemens Aktiengesellschaft | Ohmscher Kontakt auf einem lichtdurchlässigen Substrat eines Bauelements |
| US4354140A (en) * | 1979-05-28 | 1982-10-12 | Zaidan Hojin Handotai Kenkyu Shinkokai | Light-emitting semiconductor |
| EP0260909A3 (en) * | 1986-09-12 | 1988-06-01 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method of manufacturing the same |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS546787A (en) * | 1977-06-17 | 1979-01-19 | Matsushita Electric Ind Co Ltd | Luminous element |
| JPS56111276A (en) * | 1980-02-07 | 1981-09-02 | Semiconductor Res Found | Luminous semiconductor device |
| GB2070859B (en) * | 1980-02-07 | 1984-03-21 | Stanley Electric Co Ltd | Hetero-junction light-emitting diode |
| JPS57178386A (en) * | 1981-04-27 | 1982-11-02 | Stanley Electric Co Ltd | Light emitting diode |
| US4477824A (en) * | 1982-03-04 | 1984-10-16 | At&T Bell Laboratories | Light emitting device for optical switching |
| US4966862A (en) * | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
| GB2252871B (en) * | 1991-02-16 | 1994-11-02 | Robin Mukerjee | Wide surface LED |
| DE10234977A1 (de) * | 2002-07-31 | 2004-02-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Dünnschicht-Halbleiterbauelement auf GaN-Basis |
| EP1668687A4 (en) * | 2003-09-19 | 2007-11-07 | Tinggi Tech Private Ltd | FABRICATION OF A CONDUCTIVE METAL LAYER ON SEMICONDUCTOR COMPONENTS |
| CN100442557C (zh) * | 2004-06-30 | 2008-12-10 | 奥斯兰姆奥普托半导体有限责任公司 | 用于施加到ⅲ/ⅴ化合物半导体材料上的具有多个层的反射层系统 |
| DE102004040277B4 (de) * | 2004-06-30 | 2015-07-30 | Osram Opto Semiconductors Gmbh | Reflektierendes Schichtsystem mit einer Mehrzahl von Schichten zur Aufbringung auf ein III/V-Verbindungshalbleitermaterial |
| EP2387081B1 (en) * | 2010-05-11 | 2015-09-30 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device and method for fabricating the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4866384A (enExample) * | 1971-12-14 | 1973-09-11 | ||
| JPS5057189A (enExample) * | 1973-09-17 | 1975-05-19 | ||
| JPS5115983A (en) * | 1974-07-31 | 1976-02-07 | Hitachi Ltd | Handotaisochino seizohoho |
| JPS5734671B2 (enExample) * | 1974-09-20 | 1982-07-24 |
-
1976
- 1976-02-27 JP JP2000776A patent/JPS52104091A/ja active Pending
-
1977
- 1977-01-25 DE DE19772702935 patent/DE2702935A1/de active Pending
- 1977-02-04 FR FR7703129A patent/FR2342560A1/fr active Granted
- 1977-02-09 NL NL7701379A patent/NL7701379A/xx not_active Application Discontinuation
- 1977-02-24 US US05/771,576 patent/US4122486A/en not_active Expired - Lifetime
- 1977-02-25 GB GB8086/77A patent/GB1540004A/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4354140A (en) * | 1979-05-28 | 1982-10-12 | Zaidan Hojin Handotai Kenkyu Shinkokai | Light-emitting semiconductor |
| EP0051172A1 (de) * | 1980-11-03 | 1982-05-12 | Siemens Aktiengesellschaft | Ohmscher Kontakt auf einem lichtdurchlässigen Substrat eines Bauelements |
| EP0260909A3 (en) * | 1986-09-12 | 1988-06-01 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method of manufacturing the same |
| US4870468A (en) * | 1986-09-12 | 1989-09-26 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7701379A (nl) | 1977-08-30 |
| FR2342560B1 (enExample) | 1979-10-05 |
| US4122486A (en) | 1978-10-24 |
| JPS52104091A (en) | 1977-09-01 |
| GB1540004A (en) | 1979-02-07 |
| FR2342560A1 (fr) | 1977-09-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHN | Withdrawal |