JPS52104091A - Light-emitting semiconductor - Google Patents

Light-emitting semiconductor

Info

Publication number
JPS52104091A
JPS52104091A JP2000776A JP2000776A JPS52104091A JP S52104091 A JPS52104091 A JP S52104091A JP 2000776 A JP2000776 A JP 2000776A JP 2000776 A JP2000776 A JP 2000776A JP S52104091 A JPS52104091 A JP S52104091A
Authority
JP
Japan
Prior art keywords
light
emitting semiconductor
providing
type layer
emitted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000776A
Other languages
English (en)
Japanese (ja)
Inventor
Yuichi Ono
Makoto Morioka
Kazuhiro Ito
Mitsuhiro Mori
Masahiko Kawada
Kazuhiro Kurata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000776A priority Critical patent/JPS52104091A/ja
Priority to DE19772702935 priority patent/DE2702935A1/de
Priority to FR7703129A priority patent/FR2342560A1/fr
Priority to NL7701379A priority patent/NL7701379A/xx
Priority to US05/771,576 priority patent/US4122486A/en
Priority to GB8086/77A priority patent/GB1540004A/en
Publication of JPS52104091A publication Critical patent/JPS52104091A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Led Devices (AREA)
JP2000776A 1976-02-27 1976-02-27 Light-emitting semiconductor Pending JPS52104091A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000776A JPS52104091A (en) 1976-02-27 1976-02-27 Light-emitting semiconductor
DE19772702935 DE2702935A1 (de) 1976-02-27 1977-01-25 Licht emittierendes halbleiterelement
FR7703129A FR2342560A1 (fr) 1976-02-27 1977-02-04 Element electroluminescent a semi-conducteur
NL7701379A NL7701379A (nl) 1976-02-27 1977-02-09 Licht-uitzendend halfgeleiderelement.
US05/771,576 US4122486A (en) 1976-02-27 1977-02-24 Semiconductor light-emitting element
GB8086/77A GB1540004A (en) 1976-02-27 1977-02-25 Semiconductor light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000776A JPS52104091A (en) 1976-02-27 1976-02-27 Light-emitting semiconductor

Publications (1)

Publication Number Publication Date
JPS52104091A true JPS52104091A (en) 1977-09-01

Family

ID=12015056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000776A Pending JPS52104091A (en) 1976-02-27 1976-02-27 Light-emitting semiconductor

Country Status (6)

Country Link
US (1) US4122486A (enExample)
JP (1) JPS52104091A (enExample)
DE (1) DE2702935A1 (enExample)
FR (1) FR2342560A1 (enExample)
GB (1) GB1540004A (enExample)
NL (1) NL7701379A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111276A (en) * 1980-02-07 1981-09-02 Semiconductor Res Found Luminous semiconductor device
JPS57178386A (en) * 1981-04-27 1982-11-02 Stanley Electric Co Ltd Light emitting diode

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS546787A (en) * 1977-06-17 1979-01-19 Matsushita Electric Ind Co Ltd Luminous element
US4354140A (en) * 1979-05-28 1982-10-12 Zaidan Hojin Handotai Kenkyu Shinkokai Light-emitting semiconductor
GB2070859B (en) * 1980-02-07 1984-03-21 Stanley Electric Co Ltd Hetero-junction light-emitting diode
DE3041358A1 (de) * 1980-11-03 1982-06-09 Siemens AG, 1000 Berlin und 8000 München Lichtreflektirender ohmscher kontakt fuer bauelemente
US4477824A (en) * 1982-03-04 1984-10-16 At&T Bell Laboratories Light emitting device for optical switching
US4870468A (en) * 1986-09-12 1989-09-26 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method of manufacturing the same
US4966862A (en) * 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
GB2252871B (en) * 1991-02-16 1994-11-02 Robin Mukerjee Wide surface LED
DE10234977A1 (de) * 2002-07-31 2004-02-12 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Dünnschicht-Halbleiterbauelement auf GaN-Basis
EP1668687A4 (en) * 2003-09-19 2007-11-07 Tinggi Tech Private Ltd FABRICATION OF A CONDUCTIVE METAL LAYER ON SEMICONDUCTOR COMPONENTS
CN100442557C (zh) * 2004-06-30 2008-12-10 奥斯兰姆奥普托半导体有限责任公司 用于施加到ⅲ/ⅴ化合物半导体材料上的具有多个层的反射层系统
DE102004040277B4 (de) * 2004-06-30 2015-07-30 Osram Opto Semiconductors Gmbh Reflektierendes Schichtsystem mit einer Mehrzahl von Schichten zur Aufbringung auf ein III/V-Verbindungshalbleitermaterial
EP2387081B1 (en) * 2010-05-11 2015-09-30 Samsung Electronics Co., Ltd. Semiconductor light emitting device and method for fabricating the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4866384A (enExample) * 1971-12-14 1973-09-11
JPS5057189A (enExample) * 1973-09-17 1975-05-19
JPS5115983A (en) * 1974-07-31 1976-02-07 Hitachi Ltd Handotaisochino seizohoho

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5734671B2 (enExample) * 1974-09-20 1982-07-24

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4866384A (enExample) * 1971-12-14 1973-09-11
JPS5057189A (enExample) * 1973-09-17 1975-05-19
JPS5115983A (en) * 1974-07-31 1976-02-07 Hitachi Ltd Handotaisochino seizohoho

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111276A (en) * 1980-02-07 1981-09-02 Semiconductor Res Found Luminous semiconductor device
JPS57178386A (en) * 1981-04-27 1982-11-02 Stanley Electric Co Ltd Light emitting diode

Also Published As

Publication number Publication date
NL7701379A (nl) 1977-08-30
FR2342560B1 (enExample) 1979-10-05
US4122486A (en) 1978-10-24
GB1540004A (en) 1979-02-07
FR2342560A1 (fr) 1977-09-23
DE2702935A1 (de) 1977-09-01

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