DE2658090C2 - Monolithisch integrierter bipolarer Transistor mit niedrigem Sättigungswiderstand - Google Patents

Monolithisch integrierter bipolarer Transistor mit niedrigem Sättigungswiderstand

Info

Publication number
DE2658090C2
DE2658090C2 DE2658090A DE2658090A DE2658090C2 DE 2658090 C2 DE2658090 C2 DE 2658090C2 DE 2658090 A DE2658090 A DE 2658090A DE 2658090 A DE2658090 A DE 2658090A DE 2658090 C2 DE2658090 C2 DE 2658090C2
Authority
DE
Germany
Prior art keywords
region
sections
epitaxial layer
conductivity type
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2658090A
Other languages
German (de)
English (en)
Other versions
DE2658090A1 (de
Inventor
Armand Pasquale Schenectady N.Y. Ferro
Elizabeth Schenectady N.Y. Kurs-Chinoy
Bruno Ferdinand Schenectady Kurz, (verstorben)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE2658090A1 publication Critical patent/DE2658090A1/de
Application granted granted Critical
Publication of DE2658090C2 publication Critical patent/DE2658090C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE2658090A 1975-12-24 1976-12-22 Monolithisch integrierter bipolarer Transistor mit niedrigem Sättigungswiderstand Expired DE2658090C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/644,338 US4047220A (en) 1975-12-24 1975-12-24 Bipolar transistor structure having low saturation resistance

Publications (2)

Publication Number Publication Date
DE2658090A1 DE2658090A1 (de) 1977-07-07
DE2658090C2 true DE2658090C2 (de) 1985-12-12

Family

ID=24584465

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2658090A Expired DE2658090C2 (de) 1975-12-24 1976-12-22 Monolithisch integrierter bipolarer Transistor mit niedrigem Sättigungswiderstand

Country Status (8)

Country Link
US (1) US4047220A (enExample)
JP (1) JPS5287376A (enExample)
DE (1) DE2658090C2 (enExample)
FI (1) FI66263C (enExample)
FR (1) FR2336800A1 (enExample)
GB (1) GB1562735A (enExample)
IT (1) IT1065584B (enExample)
MX (1) MX143444A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4117507A (en) * 1976-06-22 1978-09-26 Sgs-Ates Componeti Elettronici S.P.A. Diode formed in integrated-circuit structure
US4152715A (en) * 1977-11-28 1979-05-01 The United States Of America As Represented By The Secretary Of The Army Silicon base CCD-bipolar transistor compatible methods and products
US4236164A (en) * 1977-12-28 1980-11-25 Bell Telephone Laboratories, Incorporated Bipolar transistor stabilization structure
GB2023340B (en) * 1978-06-01 1982-09-02 Mitsubishi Electric Corp Integrated circuits
US4233618A (en) * 1978-07-31 1980-11-11 Sprague Electric Company Integrated circuit with power transistor
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US4412142A (en) * 1980-12-24 1983-10-25 General Electric Company Integrated circuit incorporating low voltage and high voltage semiconductor devices
US5068702A (en) * 1986-03-31 1991-11-26 Exar Corporation Programmable transistor
US5001538A (en) * 1988-12-28 1991-03-19 Synergy Semiconductor Corporation Bipolar sinker structure and process for forming same
EP0665597A1 (en) * 1994-01-27 1995-08-02 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe IGBT and manufacturing process therefore
JP3367500B2 (ja) * 2000-03-15 2003-01-14 日本電気株式会社 半導体装置
US9231403B2 (en) * 2014-03-24 2016-01-05 Texas Instruments Incorporated ESD protection circuit with plural avalanche diodes
US9312371B2 (en) * 2014-07-24 2016-04-12 Globalfoundries Inc. Bipolar junction transistors and methods of fabrication
CN111063723B (zh) * 2019-11-25 2021-12-28 深圳深爱半导体股份有限公司 开关集成控制器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL143074B (nl) * 1963-12-13 1974-08-15 Philips Nv Transistor.
US3460006A (en) * 1966-02-28 1969-08-05 Westinghouse Electric Corp Semiconductor integrated circuits with improved isolation
US3730787A (en) * 1970-08-26 1973-05-01 Bell Telephone Labor Inc Method of fabricating semiconductor integrated circuits using deposited doped oxides as a source of dopant impurities
US3665266A (en) * 1970-12-10 1972-05-23 Motorola Inc Low saturation resistance,low offset voltage,monolithic analog switch
FR2144595B1 (enExample) * 1971-07-07 1974-09-06 Radiotechnique Compelec
CA1056070A (en) * 1975-02-25 1979-06-05 General Electric Company Method of making an ic structure having both power and signal components

Also Published As

Publication number Publication date
MX143444A (es) 1981-05-12
JPS5551346B2 (enExample) 1980-12-23
US4047220A (en) 1977-09-06
FI66263C (fi) 1984-09-10
FR2336800B1 (enExample) 1982-11-05
IT1065584B (it) 1985-02-25
GB1562735A (en) 1980-03-12
FI763629A7 (enExample) 1977-06-25
DE2658090A1 (de) 1977-07-07
JPS5287376A (en) 1977-07-21
FI66263B (fi) 1984-05-31
FR2336800A1 (fr) 1977-07-22

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Legal Events

Date Code Title Description
OD Request for examination
8120 Willingness to grant licences paragraph 23
D2 Grant after examination
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: VOIGT, R., DIPL.-ING., PAT.-ANW., 6232 BAD SODEN