MX143444A - Mejoras en transistor bipolar con baja resistencia de saturacion - Google Patents

Mejoras en transistor bipolar con baja resistencia de saturacion

Info

Publication number
MX143444A
MX143444A MX167459A MX16745976A MX143444A MX 143444 A MX143444 A MX 143444A MX 167459 A MX167459 A MX 167459A MX 16745976 A MX16745976 A MX 16745976A MX 143444 A MX143444 A MX 143444A
Authority
MX
Mexico
Prior art keywords
bipolar transistor
low saturation
saturation resistance
resistance
low
Prior art date
Application number
MX167459A
Other languages
English (en)
Spanish (es)
Inventor
Armand Pasquale Ferro
Bruno Ferdinand Kurz
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of MX143444A publication Critical patent/MX143444A/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
MX167459A 1975-12-24 1976-12-16 Mejoras en transistor bipolar con baja resistencia de saturacion MX143444A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/644,338 US4047220A (en) 1975-12-24 1975-12-24 Bipolar transistor structure having low saturation resistance

Publications (1)

Publication Number Publication Date
MX143444A true MX143444A (es) 1981-05-12

Family

ID=24584465

Family Applications (1)

Application Number Title Priority Date Filing Date
MX167459A MX143444A (es) 1975-12-24 1976-12-16 Mejoras en transistor bipolar con baja resistencia de saturacion

Country Status (8)

Country Link
US (1) US4047220A (enExample)
JP (1) JPS5287376A (enExample)
DE (1) DE2658090C2 (enExample)
FI (1) FI66263C (enExample)
FR (1) FR2336800A1 (enExample)
GB (1) GB1562735A (enExample)
IT (1) IT1065584B (enExample)
MX (1) MX143444A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4117507A (en) * 1976-06-22 1978-09-26 Sgs-Ates Componeti Elettronici S.P.A. Diode formed in integrated-circuit structure
US4152715A (en) * 1977-11-28 1979-05-01 The United States Of America As Represented By The Secretary Of The Army Silicon base CCD-bipolar transistor compatible methods and products
US4236164A (en) * 1977-12-28 1980-11-25 Bell Telephone Laboratories, Incorporated Bipolar transistor stabilization structure
GB2023340B (en) * 1978-06-01 1982-09-02 Mitsubishi Electric Corp Integrated circuits
US4233618A (en) * 1978-07-31 1980-11-11 Sprague Electric Company Integrated circuit with power transistor
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US4412142A (en) * 1980-12-24 1983-10-25 General Electric Company Integrated circuit incorporating low voltage and high voltage semiconductor devices
US5068702A (en) * 1986-03-31 1991-11-26 Exar Corporation Programmable transistor
US5001538A (en) * 1988-12-28 1991-03-19 Synergy Semiconductor Corporation Bipolar sinker structure and process for forming same
EP0665597A1 (en) * 1994-01-27 1995-08-02 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe IGBT and manufacturing process therefore
JP3367500B2 (ja) * 2000-03-15 2003-01-14 日本電気株式会社 半導体装置
US9231403B2 (en) * 2014-03-24 2016-01-05 Texas Instruments Incorporated ESD protection circuit with plural avalanche diodes
US9312371B2 (en) * 2014-07-24 2016-04-12 Globalfoundries Inc. Bipolar junction transistors and methods of fabrication
CN111063723B (zh) * 2019-11-25 2021-12-28 深圳深爱半导体股份有限公司 开关集成控制器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL143074B (nl) * 1963-12-13 1974-08-15 Philips Nv Transistor.
US3460006A (en) * 1966-02-28 1969-08-05 Westinghouse Electric Corp Semiconductor integrated circuits with improved isolation
US3730787A (en) * 1970-08-26 1973-05-01 Bell Telephone Labor Inc Method of fabricating semiconductor integrated circuits using deposited doped oxides as a source of dopant impurities
US3665266A (en) * 1970-12-10 1972-05-23 Motorola Inc Low saturation resistance,low offset voltage,monolithic analog switch
FR2144595B1 (enExample) * 1971-07-07 1974-09-06 Radiotechnique Compelec
CA1056070A (en) * 1975-02-25 1979-06-05 General Electric Company Method of making an ic structure having both power and signal components

Also Published As

Publication number Publication date
JPS5551346B2 (enExample) 1980-12-23
US4047220A (en) 1977-09-06
FI66263C (fi) 1984-09-10
FR2336800B1 (enExample) 1982-11-05
IT1065584B (it) 1985-02-25
DE2658090C2 (de) 1985-12-12
GB1562735A (en) 1980-03-12
FI763629A7 (enExample) 1977-06-25
DE2658090A1 (de) 1977-07-07
JPS5287376A (en) 1977-07-21
FI66263B (fi) 1984-05-31
FR2336800A1 (fr) 1977-07-22

Similar Documents

Publication Publication Date Title
MX143761A (es) Mejoras en turbo-bombas
IT1053366B (it) Dispositivo di aereazione
NL7604493A (nl) Bipolaire halfgeleiderinrichting.
NL7609801A (nl) Veldeffecttransistor met grote drempelstabili- teit.
BE843622A (fr) Circuit integre bipolaire
MX143444A (es) Mejoras en transistor bipolar con baja resistencia de saturacion
SE413216B (sv) Sammansatt transistorkrets
NL7609052A (nl) Veldeffekttransistor.
BE824887A (fr) Transistor bipolaire
SE396866B (sv) Krets med sammansatt transistor
DD128662A5 (de) Estergemische mit schmiermittelwirkung
BR7603951A (pt) Aperfeicoamento em aparelho de reproducao
SE407630B (sv) Anordning for metning av radioaktivitet i innehallet av flera kerl
MX144462A (es) Mejoras en dirigible
IT1123010B (it) Perfezionamento nei carburatori
BR7600765A (pt) Aperfeicoamento em colhedeira combinada
FR2301925A1 (fr) Transistor planar inverse
NL7805874A (nl) Schakelinrichting met bipolaire transistoren.
SE405697B (sv) Monteringsdistans i notspont
NL7614428A (nl) Geintegreerde schakeling met komplementaire bipolaire transistoren.
FR2301924A1 (fr) Transistor planar inverse
SE7510422L (sv) Brytarkrets med bipolert tverfelt
IT1070809B (it) Transistore bipolare laterale
SE380633B (sv) Anordning for strommetning i stromriktare
FR1297417A (fr) Perfectionnement aux résistances électriques