DE2656532A1 - Verfahren zur herstellung einer heterostrukturhalbleiter-wellenleiteranordnung - Google Patents

Verfahren zur herstellung einer heterostrukturhalbleiter-wellenleiteranordnung

Info

Publication number
DE2656532A1
DE2656532A1 DE19762656532 DE2656532A DE2656532A1 DE 2656532 A1 DE2656532 A1 DE 2656532A1 DE 19762656532 DE19762656532 DE 19762656532 DE 2656532 A DE2656532 A DE 2656532A DE 2656532 A1 DE2656532 A1 DE 2656532A1
Authority
DE
Germany
Prior art keywords
layer
groove
refractive index
higher refractive
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19762656532
Other languages
German (de)
English (en)
Inventor
Paul Anthony Kirkby
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Publication of DE2656532A1 publication Critical patent/DE2656532A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
DE19762656532 1975-12-22 1976-12-14 Verfahren zur herstellung einer heterostrukturhalbleiter-wellenleiteranordnung Withdrawn DE2656532A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB52490/75A GB1530323A (en) 1975-12-22 1975-12-22 Semiconductor waveguide structures

Publications (1)

Publication Number Publication Date
DE2656532A1 true DE2656532A1 (de) 1977-07-07

Family

ID=10464116

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762656532 Withdrawn DE2656532A1 (de) 1975-12-22 1976-12-14 Verfahren zur herstellung einer heterostrukturhalbleiter-wellenleiteranordnung

Country Status (6)

Country Link
AU (1) AU500265B2 (https=)
CA (1) CA1070029A (https=)
CH (1) CH609488A5 (https=)
DE (1) DE2656532A1 (https=)
FR (1) FR2336797A1 (https=)
GB (1) GB1530323A (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2834922A1 (de) * 1977-08-15 1979-03-01 Ibm Heterouebergangs-diodenlaser
DE2920454A1 (de) * 1978-05-22 1979-11-29 Matsushita Electric Ind Co Ltd Halbleiterlaser und verfahren zu dessen herstellung
DE2933149A1 (de) * 1978-08-18 1980-02-21 Int Standard Electric Corp Wellenleitendes halbleiterbauteil
DE3001843A1 (de) * 1979-01-18 1980-08-07 Nippon Electric Co Halbleiterlaser
US4329658A (en) * 1978-06-30 1982-05-11 Hitachi, Ltd. Semiconductor laser device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2123604B (en) * 1982-06-29 1985-12-18 Standard Telephones Cables Ltd Injection laser manufacture
FR2548220B1 (fr) * 1983-07-01 1987-07-31 Labo Electronique Physique Guide d'onde lumineuse sur materiau semi-conducteur
WO1995005616A1 (en) * 1993-08-13 1995-02-23 Telstra Corporation Limited A method of forming an optical waveguide device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1065460A (en) * 1975-06-23 1979-10-30 Robert D. Burnham Buried-heterostructure diode injection laser

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
Appl. Phys. Lett., Vol. 27, Nr. 9, 1975, S. 510-511 *
IEEE J. Quant. Electronics, Vol. QE-11, Nr. 7, 1975, S. 413-420
IEEE J. Quant. Electronics, Vol. QE-11, Nr. 7, 1975, S. 432-435
IEEE J. Quant. Electronics, Vol. QE-11, Nr. 7, 1975, S. 432-435, IEEE J. Quant. Electronics, Vol. QE-11, Nr. 7, 1975, S. 413-420 *
J. Appl. Phys., Vol. 45, Nr. 11, 1974, S. 4899-4906 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2834922A1 (de) * 1977-08-15 1979-03-01 Ibm Heterouebergangs-diodenlaser
DE2920454A1 (de) * 1978-05-22 1979-11-29 Matsushita Electric Ind Co Ltd Halbleiterlaser und verfahren zu dessen herstellung
US4329658A (en) * 1978-06-30 1982-05-11 Hitachi, Ltd. Semiconductor laser device
DE2933149A1 (de) * 1978-08-18 1980-02-21 Int Standard Electric Corp Wellenleitendes halbleiterbauteil
DE3001843A1 (de) * 1979-01-18 1980-08-07 Nippon Electric Co Halbleiterlaser
US4321556A (en) * 1979-01-18 1982-03-23 Nippon Electric Co., Ltd. Semiconductor laser

Also Published As

Publication number Publication date
FR2336797B1 (https=) 1982-05-21
GB1530323A (en) 1978-10-25
AU500265B2 (en) 1979-05-17
CH609488A5 (en) 1979-02-28
FR2336797A1 (fr) 1977-07-22
AU2031676A (en) 1978-06-15
CA1070029A (en) 1980-01-15

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8130 Withdrawal