FR2336797B1 - - Google Patents
Info
- Publication number
- FR2336797B1 FR2336797B1 FR7638714A FR7638714A FR2336797B1 FR 2336797 B1 FR2336797 B1 FR 2336797B1 FR 7638714 A FR7638714 A FR 7638714A FR 7638714 A FR7638714 A FR 7638714A FR 2336797 B1 FR2336797 B1 FR 2336797B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2907—Materials being Group IIIA-VA materials
- H10P14/2911—Arsenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2924—Structures
- H10P14/2925—Surface structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3421—Arsenides
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB52490/75A GB1530323A (en) | 1975-12-22 | 1975-12-22 | Semiconductor waveguide structures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2336797A1 FR2336797A1 (fr) | 1977-07-22 |
| FR2336797B1 true FR2336797B1 (https=) | 1982-05-21 |
Family
ID=10464116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7638714A Granted FR2336797A1 (fr) | 1975-12-22 | 1976-12-22 | Methode de fabrication de guides d'ondes semi-conducteurs a heterojonctions |
Country Status (6)
| Country | Link |
|---|---|
| AU (1) | AU500265B2 (https=) |
| CA (1) | CA1070029A (https=) |
| CH (1) | CH609488A5 (https=) |
| DE (1) | DE2656532A1 (https=) |
| FR (1) | FR2336797A1 (https=) |
| GB (1) | GB1530323A (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4166253A (en) * | 1977-08-15 | 1979-08-28 | International Business Machines Corporation | Heterostructure diode injection laser having a constricted active region |
| CA1127282A (en) * | 1978-05-22 | 1982-07-06 | Takashi Sugino | Semiconductor laser and method of making the same |
| JPS5522807A (en) * | 1978-06-30 | 1980-02-18 | Hitachi Ltd | Semiconductor laser element and manufacturing of the same |
| GB2029083B (en) * | 1978-08-18 | 1982-08-11 | Standard Telephones Cables Ltd | Semiconductor waveguide devices |
| GB2046983B (en) * | 1979-01-18 | 1983-03-16 | Nippon Electric Co | Semiconductor lasers |
| GB2123604B (en) * | 1982-06-29 | 1985-12-18 | Standard Telephones Cables Ltd | Injection laser manufacture |
| FR2548220B1 (fr) * | 1983-07-01 | 1987-07-31 | Labo Electronique Physique | Guide d'onde lumineuse sur materiau semi-conducteur |
| WO1995005616A1 (en) * | 1993-08-13 | 1995-02-23 | Telstra Corporation Limited | A method of forming an optical waveguide device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1065460A (en) * | 1975-06-23 | 1979-10-30 | Robert D. Burnham | Buried-heterostructure diode injection laser |
-
1975
- 1975-12-22 GB GB52490/75A patent/GB1530323A/en not_active Expired
-
1976
- 1976-12-07 AU AU20316/76A patent/AU500265B2/en not_active Expired
- 1976-12-14 DE DE19762656532 patent/DE2656532A1/de not_active Withdrawn
- 1976-12-15 CA CA267,912A patent/CA1070029A/en not_active Expired
- 1976-12-17 CH CH1589176A patent/CH609488A5/xx not_active IP Right Cessation
- 1976-12-22 FR FR7638714A patent/FR2336797A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB1530323A (en) | 1978-10-25 |
| DE2656532A1 (de) | 1977-07-07 |
| AU500265B2 (en) | 1979-05-17 |
| CH609488A5 (en) | 1979-02-28 |
| FR2336797A1 (fr) | 1977-07-22 |
| AU2031676A (en) | 1978-06-15 |
| CA1070029A (en) | 1980-01-15 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TP | Transmission of property | ||
| ST | Notification of lapse |