AU2031676A - Epitaxially formed heterostructure optical waveguide structure - Google Patents
Epitaxially formed heterostructure optical waveguide structureInfo
- Publication number
- AU2031676A AU2031676A AU20316/76A AU2031676A AU2031676A AU 2031676 A AU2031676 A AU 2031676A AU 20316/76 A AU20316/76 A AU 20316/76A AU 2031676 A AU2031676 A AU 2031676A AU 2031676 A AU2031676 A AU 2031676A
- Authority
- AU
- Australia
- Prior art keywords
- optical waveguide
- waveguide structure
- epitaxially formed
- heterostructure optical
- formed heterostructure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB5249075A GB1530323A (en) | 1975-12-22 | 1975-12-22 | Semiconductor waveguide structures |
GBGB52490/75 | 1975-12-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
AU2031676A true AU2031676A (en) | 1978-06-15 |
AU500265B2 AU500265B2 (en) | 1979-05-17 |
Family
ID=10464116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU20316/76A Expired AU500265B2 (en) | 1975-12-22 | 1976-12-07 | Epitaxially formed heterostructure optical waveguide structure |
Country Status (6)
Country | Link |
---|---|
AU (1) | AU500265B2 (en) |
CA (1) | CA1070029A (en) |
CH (1) | CH609488A5 (en) |
DE (1) | DE2656532A1 (en) |
FR (1) | FR2336797A1 (en) |
GB (1) | GB1530323A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995005616A1 (en) * | 1993-08-13 | 1995-02-23 | Telstra Corporation Limited | A method of forming an optical waveguide device |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4166253A (en) * | 1977-08-15 | 1979-08-28 | International Business Machines Corporation | Heterostructure diode injection laser having a constricted active region |
CA1127282A (en) * | 1978-05-22 | 1982-07-06 | Takashi Sugino | Semiconductor laser and method of making the same |
JPS5522807A (en) * | 1978-06-30 | 1980-02-18 | Hitachi Ltd | Semiconductor laser element and manufacturing of the same |
GB2029083B (en) * | 1978-08-18 | 1982-08-11 | Standard Telephones Cables Ltd | Semiconductor waveguide devices |
GB2046983B (en) * | 1979-01-18 | 1983-03-16 | Nippon Electric Co | Semiconductor lasers |
GB2123604B (en) * | 1982-06-29 | 1985-12-18 | Standard Telephones Cables Ltd | Injection laser manufacture |
FR2548220B1 (en) * | 1983-07-01 | 1987-07-31 | Labo Electronique Physique | LIGHT WAVEGUIDE ON SEMICONDUCTOR MATERIAL |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1065460A (en) * | 1975-06-23 | 1979-10-30 | Robert D. Burnham | Buried-heterostructure diode injection laser |
-
1975
- 1975-12-22 GB GB5249075A patent/GB1530323A/en not_active Expired
-
1976
- 1976-12-07 AU AU20316/76A patent/AU500265B2/en not_active Expired
- 1976-12-14 DE DE19762656532 patent/DE2656532A1/en not_active Withdrawn
- 1976-12-15 CA CA267,912A patent/CA1070029A/en not_active Expired
- 1976-12-17 CH CH1589176A patent/CH609488A5/en not_active IP Right Cessation
- 1976-12-22 FR FR7638714A patent/FR2336797A1/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995005616A1 (en) * | 1993-08-13 | 1995-02-23 | Telstra Corporation Limited | A method of forming an optical waveguide device |
Also Published As
Publication number | Publication date |
---|---|
DE2656532A1 (en) | 1977-07-07 |
FR2336797B1 (en) | 1982-05-21 |
AU500265B2 (en) | 1979-05-17 |
CA1070029A (en) | 1980-01-15 |
CH609488A5 (en) | 1979-02-28 |
GB1530323A (en) | 1978-10-25 |
FR2336797A1 (en) | 1977-07-22 |
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