FR2336797A1 - Methode de fabrication de guides d'ondes semi-conducteurs a heterojonctions - Google Patents

Methode de fabrication de guides d'ondes semi-conducteurs a heterojonctions

Info

Publication number
FR2336797A1
FR2336797A1 FR7638714A FR7638714A FR2336797A1 FR 2336797 A1 FR2336797 A1 FR 2336797A1 FR 7638714 A FR7638714 A FR 7638714A FR 7638714 A FR7638714 A FR 7638714A FR 2336797 A1 FR2336797 A1 FR 2336797A1
Authority
FR
France
Prior art keywords
heterojunctions
manufacturing
wave guides
semiconductor wave
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7638714A
Other languages
English (en)
French (fr)
Other versions
FR2336797B1 (https=
Inventor
Paul Anthony Kirkby
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Publication of FR2336797A1 publication Critical patent/FR2336797A1/fr
Application granted granted Critical
Publication of FR2336797B1 publication Critical patent/FR2336797B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
FR7638714A 1975-12-22 1976-12-22 Methode de fabrication de guides d'ondes semi-conducteurs a heterojonctions Granted FR2336797A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB52490/75A GB1530323A (en) 1975-12-22 1975-12-22 Semiconductor waveguide structures

Publications (2)

Publication Number Publication Date
FR2336797A1 true FR2336797A1 (fr) 1977-07-22
FR2336797B1 FR2336797B1 (https=) 1982-05-21

Family

ID=10464116

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7638714A Granted FR2336797A1 (fr) 1975-12-22 1976-12-22 Methode de fabrication de guides d'ondes semi-conducteurs a heterojonctions

Country Status (6)

Country Link
AU (1) AU500265B2 (https=)
CA (1) CA1070029A (https=)
CH (1) CH609488A5 (https=)
DE (1) DE2656532A1 (https=)
FR (1) FR2336797A1 (https=)
GB (1) GB1530323A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0130650A1 (fr) * 1983-07-01 1985-01-09 ALCATEL ALSTHOM RECHERCHE Société Anonyme Dispositif semi-conducteur comportant un guide d'onde lumineuse et procédé de réalisation d'un tel dispositif

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166253A (en) * 1977-08-15 1979-08-28 International Business Machines Corporation Heterostructure diode injection laser having a constricted active region
CA1127282A (en) * 1978-05-22 1982-07-06 Takashi Sugino Semiconductor laser and method of making the same
JPS5522807A (en) * 1978-06-30 1980-02-18 Hitachi Ltd Semiconductor laser element and manufacturing of the same
GB2029083B (en) * 1978-08-18 1982-08-11 Standard Telephones Cables Ltd Semiconductor waveguide devices
GB2046983B (en) * 1979-01-18 1983-03-16 Nippon Electric Co Semiconductor lasers
GB2123604B (en) * 1982-06-29 1985-12-18 Standard Telephones Cables Ltd Injection laser manufacture
WO1995005616A1 (en) * 1993-08-13 1995-02-23 Telstra Corporation Limited A method of forming an optical waveguide device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2315785A1 (fr) * 1975-06-23 1977-01-21 Xerox Corp Laser a injection comprenant une diode a heterostructure enterree

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2315785A1 (fr) * 1975-06-23 1977-01-21 Xerox Corp Laser a injection comprenant une diode a heterostructure enterree

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *
EXBK/76 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0130650A1 (fr) * 1983-07-01 1985-01-09 ALCATEL ALSTHOM RECHERCHE Société Anonyme Dispositif semi-conducteur comportant un guide d'onde lumineuse et procédé de réalisation d'un tel dispositif

Also Published As

Publication number Publication date
FR2336797B1 (https=) 1982-05-21
GB1530323A (en) 1978-10-25
DE2656532A1 (de) 1977-07-07
AU500265B2 (en) 1979-05-17
CH609488A5 (en) 1979-02-28
AU2031676A (en) 1978-06-15
CA1070029A (en) 1980-01-15

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse