DE2654460A1 - Schaltung zur erhoehung der schreibgeschwindigkeit fuer speicherzellen - Google Patents
Schaltung zur erhoehung der schreibgeschwindigkeit fuer speicherzellenInfo
- Publication number
- DE2654460A1 DE2654460A1 DE19762654460 DE2654460A DE2654460A1 DE 2654460 A1 DE2654460 A1 DE 2654460A1 DE 19762654460 DE19762654460 DE 19762654460 DE 2654460 A DE2654460 A DE 2654460A DE 2654460 A1 DE2654460 A1 DE 2654460A1
- Authority
- DE
- Germany
- Prior art keywords
- write
- circuit according
- line
- word line
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000015654 memory Effects 0.000 title claims description 32
- 230000003111 delayed effect Effects 0.000 claims description 5
- 230000000295 complement effect Effects 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims description 2
- 230000000630 rising effect Effects 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 60
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 101150041156 CBL1 gene Proteins 0.000 description 1
- 240000005523 Peganum harmala Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7540418A FR2337398A1 (fr) | 1975-12-30 | 1975-12-30 | Dispositif d'ecriture rapide pour cellules de memoire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2654460A1 true DE2654460A1 (de) | 1977-07-07 |
Family
ID=9164452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762654460 Withdrawn DE2654460A1 (de) | 1975-12-30 | 1976-12-01 | Schaltung zur erhoehung der schreibgeschwindigkeit fuer speicherzellen |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE2654460A1 (enExample) |
| FR (1) | FR2337398A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2946803A1 (de) * | 1978-11-24 | 1980-06-04 | Hitachi Ltd | Speicherschaltung |
| WO1992002933A1 (en) * | 1990-08-02 | 1992-02-20 | Carlstedt Elektronik Ab | Bit storage cell |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2926094A1 (de) * | 1979-06-28 | 1981-01-08 | Ibm Deutschland | Verfahren und schaltungsanordnung zum entladen von bitleitungskapazitaeten eines integrierten halbleiterspeichers |
-
1975
- 1975-12-30 FR FR7540418A patent/FR2337398A1/fr active Granted
-
1976
- 1976-12-01 DE DE19762654460 patent/DE2654460A1/de not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2946803A1 (de) * | 1978-11-24 | 1980-06-04 | Hitachi Ltd | Speicherschaltung |
| WO1992002933A1 (en) * | 1990-08-02 | 1992-02-20 | Carlstedt Elektronik Ab | Bit storage cell |
| US5239502A (en) * | 1990-08-02 | 1993-08-24 | Carlstedt Elektronik Ab | Bit storage cell |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2337398B1 (enExample) | 1980-05-30 |
| FR2337398A1 (fr) | 1977-07-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |