DE2646404A1 - Verfahren zur herstellung von halbleitervorrichtungen mit hoher waermeleitfaehigkeit - Google Patents

Verfahren zur herstellung von halbleitervorrichtungen mit hoher waermeleitfaehigkeit

Info

Publication number
DE2646404A1
DE2646404A1 DE19762646404 DE2646404A DE2646404A1 DE 2646404 A1 DE2646404 A1 DE 2646404A1 DE 19762646404 DE19762646404 DE 19762646404 DE 2646404 A DE2646404 A DE 2646404A DE 2646404 A1 DE2646404 A1 DE 2646404A1
Authority
DE
Germany
Prior art keywords
substrate
active part
layer
semiconductor
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19762646404
Other languages
German (de)
English (en)
Inventor
Jean Victor Bouvet
Raymond Henry
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of DE2646404A1 publication Critical patent/DE2646404A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01087—Francium [Fr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19762646404 1975-10-14 1976-10-14 Verfahren zur herstellung von halbleitervorrichtungen mit hoher waermeleitfaehigkeit Withdrawn DE2646404A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7531411A FR2328286A1 (fr) 1975-10-14 1975-10-14 Procede de fabrication de dispositifs a semiconducteurs, presentant une tres faible resistance thermique, et dispositifs obtenus par ledit procede

Publications (1)

Publication Number Publication Date
DE2646404A1 true DE2646404A1 (de) 1977-04-28

Family

ID=9161165

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762646404 Withdrawn DE2646404A1 (de) 1975-10-14 1976-10-14 Verfahren zur herstellung von halbleitervorrichtungen mit hoher waermeleitfaehigkeit

Country Status (5)

Country Link
US (1) US4141135A (enExample)
DE (1) DE2646404A1 (enExample)
FR (1) FR2328286A1 (enExample)
GB (1) GB1552860A (enExample)
SE (1) SE7611351L (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2517122A1 (fr) * 1981-11-23 1983-05-27 Raytheon Co Dispositif semi-conducteur, notamment diode micro-ondes et son procede de fabrication

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1982002798A1 (en) * 1981-01-30 1982-08-19 Inc Motorola Button rectifier package for non-planar die
US4620215A (en) * 1982-04-16 1986-10-28 Amdahl Corporation Integrated circuit packaging systems with double surface heat dissipation
US4616403A (en) * 1984-08-31 1986-10-14 Texas Instruments Incorporated Configuration of a metal insulator semiconductor with a processor based gate
US4771018A (en) * 1986-06-12 1988-09-13 Intel Corporation Process of attaching a die to a substrate using gold/silicon seed
US4810671A (en) * 1986-06-12 1989-03-07 Intel Corporation Process for bonding die to substrate using a gold/silicon seed
CA2002213C (en) * 1988-11-10 1999-03-30 Iwona Turlik High performance integrated circuit chip package and method of making same
US6498074B2 (en) 1996-10-29 2002-12-24 Tru-Si Technologies, Inc. Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners
US6882030B2 (en) 1996-10-29 2005-04-19 Tru-Si Technologies, Inc. Integrated circuit structures with a conductor formed in a through hole in a semiconductor substrate and protruding from a surface of the substrate
JP3537447B2 (ja) * 1996-10-29 2004-06-14 トル‐シ・テクノロジーズ・インコーポレイテッド 集積回路及びその製造方法
US5895312A (en) * 1996-10-30 1999-04-20 International Business Machines Corporation Apparatus for removing surface irregularities from a flat workpiece
FR2758888B1 (fr) * 1997-01-27 1999-04-23 Thomson Csf Procede de modelisation fine du fouillis de sol recu par un radar
US5891754A (en) * 1997-02-11 1999-04-06 Delco Electronics Corp. Method of inspecting integrated circuit solder joints with x-ray detectable encapsulant
FR2793953B1 (fr) * 1999-05-21 2002-08-09 Thomson Csf Capacite thermique pour composant electronique fonctionnant en impulsions longues
US6588217B2 (en) * 2000-12-11 2003-07-08 International Business Machines Corporation Thermoelectric spot coolers for RF and microwave communication integrated circuits
US6717254B2 (en) 2001-02-22 2004-04-06 Tru-Si Technologies, Inc. Devices having substrates with opening passing through the substrates and conductors in the openings, and methods of manufacture
US6787916B2 (en) 2001-09-13 2004-09-07 Tru-Si Technologies, Inc. Structures having a substrate with a cavity and having an integrated circuit bonded to a contact pad located in the cavity
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US20030189215A1 (en) 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
FR2857781B1 (fr) * 2003-07-15 2005-09-30 Thales Sa Transistor bipolaire a heterojonction a transfert thermique ameliore

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99599C (enExample) 1955-04-04 1900-01-01
BE557842A (enExample) 1956-06-01
NL125803C (enExample) 1961-01-16
NL129867C (enExample) 1964-08-07 1900-01-01
DE1439737B2 (de) * 1964-10-31 1970-05-06 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zum Herstellen einer Halblei teranordnung
DE1286511B (de) 1964-12-19 1969-01-09 Telefunken Patent Verfahren zum Herstellen eines Halbleiterkoerpers mit einem niederohmigen Substrat
US3343255A (en) * 1965-06-14 1967-09-26 Westinghouse Electric Corp Structures for semiconductor integrated circuits and methods of forming them
US3445925A (en) * 1967-04-25 1969-05-27 Motorola Inc Method for making thin semiconductor dice
FR2000604A1 (enExample) * 1968-01-23 1969-09-12 Mitsubishi Electric Corp
GB1281010A (en) 1968-12-31 1972-07-12 Associated Semiconductor Mft Improvements in and relating to methods of manufacturing semiconductor devices
US3609474A (en) * 1969-11-10 1971-09-28 Texas Instruments Inc Semiconductor with improved heat dissipation characteristics
GB1295892A (enExample) 1970-03-02 1972-11-08
NL167277C (nl) * 1970-08-29 1981-11-16 Philips Nv Halfgeleiderinrichting met een plaatvorming half- geleiderlichaam met over althans een deel van de dikte van het halfgeleiderlichaam afgeschuinde randen, dat is voorzien van een metalen elektrode die een gelijkrichtende overgang vormt met het halfgeleider- lichaam en werkwijze ter vervaardiging van de halfgeleiderinrichting.
US3689993A (en) * 1971-07-26 1972-09-12 Texas Instruments Inc Fabrication of semiconductor devices having low thermal inpedance bonds to heat sinks
US3908187A (en) * 1973-01-02 1975-09-23 Gen Electric High voltage power transistor and method for making
FR2232081A1 (en) * 1973-05-29 1974-12-27 Thomson Csf Soldering of mesa type semi-conductors - is particularly for interconnection of diodes and for attachment of heat sinks
US4035830A (en) * 1974-04-29 1977-07-12 Raytheon Company Composite semiconductor circuit and method of manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2517122A1 (fr) * 1981-11-23 1983-05-27 Raytheon Co Dispositif semi-conducteur, notamment diode micro-ondes et son procede de fabrication

Also Published As

Publication number Publication date
US4141135A (en) 1979-02-27
FR2328286B1 (enExample) 1979-04-27
FR2328286A1 (fr) 1977-05-13
GB1552860A (en) 1979-09-19
SE7611351L (sv) 1977-04-15

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee