DE2642687A1 - Photokatode - Google Patents
PhotokatodeInfo
- Publication number
- DE2642687A1 DE2642687A1 DE19762642687 DE2642687A DE2642687A1 DE 2642687 A1 DE2642687 A1 DE 2642687A1 DE 19762642687 DE19762642687 DE 19762642687 DE 2642687 A DE2642687 A DE 2642687A DE 2642687 A1 DE2642687 A1 DE 2642687A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- conversion layer
- carrier
- photocathode
- photocathode according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims description 30
- 230000004913 activation Effects 0.000 claims description 13
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 6
- 229910052792 caesium Inorganic materials 0.000 claims description 5
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- KOPBYBDAPCDYFK-UHFFFAOYSA-N caesium oxide Chemical compound [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 claims description 3
- 229910001942 caesium oxide Inorganic materials 0.000 claims description 3
- 239000003574 free electron Substances 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 58
- 229910017214 AsGa Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 238000007496 glass forming Methods 0.000 description 2
- 238000001534 heteroepitaxy Methods 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/38—Photoelectric screens; Charge-storage screens not using charge storage, e.g. photo-emissive screen, extended cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
Landscapes
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7529608A FR2326031A1 (fr) | 1975-09-26 | 1975-09-26 | Photocathode en couches minces, utilisee en transmission, et tube electronique comportant une telle photocathode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2642687A1 true DE2642687A1 (de) | 1977-03-31 |
Family
ID=9160512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762642687 Pending DE2642687A1 (de) | 1975-09-26 | 1976-09-22 | Photokatode |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5242360A (https=) |
| DE (1) | DE2642687A1 (https=) |
| FR (1) | FR2326031A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3242737A1 (de) * | 1982-11-19 | 1984-05-24 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen einer halbleiter-photokathode |
-
1975
- 1975-09-26 FR FR7529608A patent/FR2326031A1/fr active Granted
-
1976
- 1976-09-22 DE DE19762642687 patent/DE2642687A1/de active Pending
- 1976-09-24 JP JP11376676A patent/JPS5242360A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3242737A1 (de) * | 1982-11-19 | 1984-05-24 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen einer halbleiter-photokathode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5242360A (en) | 1977-04-01 |
| FR2326031A1 (fr) | 1977-04-22 |
| FR2326031B1 (https=) | 1978-09-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHN | Withdrawal |