DE2634427B2 - Eindiffundieren von arsen in siliciumplaettchen - Google Patents

Eindiffundieren von arsen in siliciumplaettchen

Info

Publication number
DE2634427B2
DE2634427B2 DE19762634427 DE2634427A DE2634427B2 DE 2634427 B2 DE2634427 B2 DE 2634427B2 DE 19762634427 DE19762634427 DE 19762634427 DE 2634427 A DE2634427 A DE 2634427A DE 2634427 B2 DE2634427 B2 DE 2634427B2
Authority
DE
Germany
Prior art keywords
arsenic
capsule
source
silicon
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19762634427
Other languages
German (de)
English (en)
Other versions
DE2634427A1 (de
Inventor
Saburo Tokio; Sudo Ichiro Higashi Tokio; Ishiguro (Japan)
Original Assignee
Furukawa Co, Ltd, Tokio
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Co, Ltd, Tokio filed Critical Furukawa Co, Ltd, Tokio
Publication of DE2634427A1 publication Critical patent/DE2634427A1/de
Publication of DE2634427B2 publication Critical patent/DE2634427B2/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE19762634427 1975-07-31 1976-07-30 Eindiffundieren von arsen in siliciumplaettchen Ceased DE2634427B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50094073A JPS5217765A (en) 1975-07-31 1975-07-31 Method to diffuse arsenic in a silicone wafer

Publications (2)

Publication Number Publication Date
DE2634427A1 DE2634427A1 (de) 1977-02-17
DE2634427B2 true DE2634427B2 (de) 1978-01-05

Family

ID=14100318

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762634427 Ceased DE2634427B2 (de) 1975-07-31 1976-07-30 Eindiffundieren von arsen in siliciumplaettchen

Country Status (2)

Country Link
JP (1) JPS5217765A (https=)
DE (1) DE2634427B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62119109U (https=) * 1986-01-17 1987-07-29

Also Published As

Publication number Publication date
JPS5344789B2 (https=) 1978-12-01
JPS5217765A (en) 1977-02-09
DE2634427A1 (de) 1977-02-17

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Legal Events

Date Code Title Description
BHV Refusal