DE2632194C2 - Aktivgas-Reaktionsvorrichtung - Google Patents
Aktivgas-ReaktionsvorrichtungInfo
- Publication number
- DE2632194C2 DE2632194C2 DE2632194A DE2632194A DE2632194C2 DE 2632194 C2 DE2632194 C2 DE 2632194C2 DE 2632194 A DE2632194 A DE 2632194A DE 2632194 A DE2632194 A DE 2632194A DE 2632194 C2 DE2632194 C2 DE 2632194C2
- Authority
- DE
- Germany
- Prior art keywords
- gas
- chamber
- activation
- activation chamber
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 57
- 230000004913 activation Effects 0.000 claims description 51
- 230000005684 electric field Effects 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 2
- 239000007789 gas Substances 0.000 description 76
- 239000000463 material Substances 0.000 description 26
- 229920002120 photoresistant polymer Polymers 0.000 description 20
- 229910052760 oxygen Inorganic materials 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- 239000000126 substance Substances 0.000 description 11
- 150000002926 oxygen Chemical class 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004435 EPR spectroscopy Methods 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
- B01J19/122—Incoherent waves
- B01J19/126—Microwaves
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/80—Apparatus for specific applications
- H05B6/802—Apparatus for specific applications for heating fluids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/12—Processes employing electromagnetic waves
- B01J2219/1203—Incoherent waves
- B01J2219/1206—Microwaves
- B01J2219/1209—Features relating to the reactor or vessel
- B01J2219/1212—Arrangements of the reactor or the reactors
- B01J2219/1215—Single reactor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/12—Processes employing electromagnetic waves
- B01J2219/1203—Incoherent waves
- B01J2219/1206—Microwaves
- B01J2219/1209—Features relating to the reactor or vessel
- B01J2219/1221—Features relating to the reactor or vessel the reactor per se
- B01J2219/1224—Form of the reactor
- B01J2219/1227—Reactors comprising tubes with open ends
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50087235A JPS5211175A (en) | 1975-07-18 | 1975-07-18 | Activated gas reacting apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2632194A1 DE2632194A1 (de) | 1977-01-20 |
| DE2632194C2 true DE2632194C2 (de) | 1987-03-12 |
Family
ID=13909163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2632194A Expired DE2632194C2 (de) | 1975-07-18 | 1976-07-16 | Aktivgas-Reaktionsvorrichtung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4065369A (enExample) |
| JP (1) | JPS5211175A (enExample) |
| DE (1) | DE2632194C2 (enExample) |
| GB (1) | GB1537100A (enExample) |
Families Citing this family (75)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5378170A (en) * | 1976-12-22 | 1978-07-11 | Toshiba Corp | Continuous processor for gas plasma etching |
| JPS5329076A (en) * | 1976-08-31 | 1978-03-17 | Toshiba Corp | Plasma treating apparatus of semiconductor substrates |
| US4138306A (en) * | 1976-08-31 | 1979-02-06 | Tokyo Shibaura Electric Co., Ltd. | Apparatus for the treatment of semiconductors |
| JPS53121469A (en) * | 1977-03-31 | 1978-10-23 | Toshiba Corp | Gas etching unit |
| JPS5449073A (en) * | 1977-09-26 | 1979-04-18 | Mitsubishi Electric Corp | Plasma processing unit |
| JPS54184070U (enExample) * | 1978-06-19 | 1979-12-27 | ||
| DE2965333D1 (en) * | 1978-12-29 | 1983-06-09 | Ncr Co | Process and apparatus for cleaning wall deposits from a film deposition furnace tube |
| JPS55131175A (en) * | 1979-03-30 | 1980-10-11 | Toshiba Corp | Surface treatment apparatus with microwave plasma |
| CA1159012A (en) * | 1980-05-02 | 1983-12-20 | Seitaro Matsuo | Plasma deposition apparatus |
| US4423303A (en) * | 1980-05-06 | 1983-12-27 | Tokyo Shibaura Denki Kabushiki Kaisha | Apparatus for treating powdery materials utilizing microwave plasma |
| JPS5740586A (en) * | 1980-08-22 | 1982-03-06 | Toshiba Corp | Treatment of fluorescent substance and its device |
| US4431898A (en) * | 1981-09-01 | 1984-02-14 | The Perkin-Elmer Corporation | Inductively coupled discharge for plasma etching and resist stripping |
| AU549376B2 (en) * | 1983-02-25 | 1986-01-23 | Toyota Jidosha Kabushiki Kaisha | Plasma treatment |
| JPS59155440A (ja) * | 1983-02-25 | 1984-09-04 | Toyota Motor Corp | プラズマ処理装置 |
| AU548915B2 (en) * | 1983-02-25 | 1986-01-09 | Toyota Jidosha Kabushiki Kaisha | Plasma treatment |
| JPS59231817A (ja) * | 1983-06-13 | 1984-12-26 | Fujitsu Ltd | マイクロ波プラズマ処理装置 |
| AU544534B2 (en) * | 1983-06-14 | 1985-06-06 | Toyota Jidosha Kabushiki Kaisha | Plasma coating |
| US4690097A (en) * | 1984-02-04 | 1987-09-01 | Toyota Jidosha Kabushiki Kaisha | Apparatus and method for plasma treatment of resin material |
| US4851295A (en) * | 1984-03-16 | 1989-07-25 | Genus, Inc. | Low resistivity tungsten silicon composite film |
| US4629635A (en) * | 1984-03-16 | 1986-12-16 | Genus, Inc. | Process for depositing a low resistivity tungsten silicon composite film on a substrate |
| US4559099A (en) * | 1984-08-24 | 1985-12-17 | Technics Gmbh Europa | Etching device |
| JPS61225819A (ja) * | 1985-03-29 | 1986-10-07 | Fuji Electric Co Ltd | レ−ザｃｖｄ装置 |
| US4673456A (en) * | 1985-09-17 | 1987-06-16 | Machine Technology, Inc. | Microwave apparatus for generating plasma afterglows |
| US4796562A (en) * | 1985-12-03 | 1989-01-10 | Varian Associates, Inc. | Rapid thermal cvd apparatus |
| US4709655A (en) * | 1985-12-03 | 1987-12-01 | Varian Associates, Inc. | Chemical vapor deposition apparatus |
| JPS62213126A (ja) * | 1986-03-13 | 1987-09-19 | Fujitsu Ltd | マイクロ波プラズマ処理装置 |
| DE3786364T2 (de) * | 1986-04-14 | 1993-11-18 | Canon Kk | Verfahren zur Herstellung einer niedergeschlagenen Schicht. |
| US4776923A (en) * | 1987-01-20 | 1988-10-11 | Machine Technology, Inc. | Plasma product treatment apparatus and methods and gas transport systems for use therein |
| US4883570A (en) * | 1987-06-08 | 1989-11-28 | Research-Cottrell, Inc. | Apparatus and method for enhanced chemical processing in high pressure and atmospheric plasmas produced by high frequency electromagnetic waves |
| FR2616614B1 (fr) * | 1987-06-10 | 1989-10-20 | Air Liquide | Torche a plasma micro-onde, dispositif comportant une telle torche et procede pour la fabrication de poudre les mettant en oeuvre |
| US4778561A (en) * | 1987-10-30 | 1988-10-18 | Veeco Instruments, Inc. | Electron cyclotron resonance plasma source |
| DE3803355A1 (de) * | 1988-02-05 | 1989-08-17 | Leybold Ag | Teilchenquelle fuer eine reaktive ionenstrahlaetz- oder plasmadepositionsanlage |
| US5015330A (en) * | 1989-02-28 | 1991-05-14 | Kabushiki Kaisha Toshiba | Film forming method and film forming device |
| US5413760A (en) * | 1989-03-08 | 1995-05-09 | Abtox, Inc. | Plasma sterilizer and method |
| JPH02279160A (ja) * | 1989-03-08 | 1990-11-15 | Abtox Inc | プラズマ滅菌方法及び滅菌装置 |
| US5650693A (en) * | 1989-03-08 | 1997-07-22 | Abtox, Inc. | Plasma sterilizer apparatus using a non-flammable mixture of hydrogen and oxygen |
| US5472664A (en) * | 1989-03-08 | 1995-12-05 | Abtox, Inc. | Plasma gas mixture for sterilizer and method |
| US5288460A (en) * | 1989-03-08 | 1994-02-22 | Abtox, Inc. | Plasma cycling sterilizing process |
| US5593649A (en) * | 1989-03-08 | 1997-01-14 | Abtox, Inc. | Canister with plasma gas mixture for sterilizer |
| US5413759A (en) * | 1989-03-08 | 1995-05-09 | Abtox, Inc. | Plasma sterilizer and method |
| DE3935002A1 (de) * | 1989-10-20 | 1991-04-25 | Plasonic Oberflaechentechnik G | Verfahren und vorrichtung zur kontinuierlichen bearbeitung von substraten |
| US5141806A (en) * | 1989-10-31 | 1992-08-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Microporous structure with layered interstitial surface treatment, and method and apparatus for preparation thereof |
| US5244629A (en) * | 1990-08-31 | 1993-09-14 | Caputo Ross A | Plasma sterilizing process with pulsed antimicrobial agent pretreatment |
| US5645796A (en) | 1990-08-31 | 1997-07-08 | Abtox, Inc. | Process for plasma sterilizing with pulsed antimicrobial agent treatment |
| US5325020A (en) * | 1990-09-28 | 1994-06-28 | Abtox, Inc. | Circular waveguide plasma microwave sterilizer apparatus |
| US5376332A (en) * | 1991-02-06 | 1994-12-27 | Abtox, Inc. | Plasma sterilizing with downstream oxygen addition |
| EP0526657A4 (en) * | 1991-02-26 | 1995-12-13 | Idemitsu Petrochemical Co | Microwave plasma cvd device, and method for synthesizing diamond by device thereof |
| US5336366A (en) * | 1993-04-05 | 1994-08-09 | Vlsi Technology, Inc. | New dry etch technique |
| US5470541A (en) * | 1993-12-28 | 1995-11-28 | E. I. Du Pont De Nemours And Company | Apparatus and process for the preparation of hydrogen cyanide |
| US6124211A (en) * | 1994-06-14 | 2000-09-26 | Fsi International, Inc. | Cleaning method |
| JPH0864559A (ja) * | 1994-06-14 | 1996-03-08 | Fsi Internatl Inc | 基板面から不要な物質を除去する方法 |
| US5534107A (en) * | 1994-06-14 | 1996-07-09 | Fsi International | UV-enhanced dry stripping of silicon nitride films |
| US5635102A (en) | 1994-09-28 | 1997-06-03 | Fsi International | Highly selective silicon oxide etching method |
| US5844195A (en) * | 1996-11-18 | 1998-12-01 | Applied Materials, Inc. | Remote plasma source |
| US6152070A (en) | 1996-11-18 | 2000-11-28 | Applied Materials, Inc. | Tandem process chamber |
| US5958348A (en) * | 1997-02-28 | 1999-09-28 | Nanogram Corporation | Efficient production of particles by chemical reaction |
| US6026896A (en) * | 1997-04-10 | 2000-02-22 | Applied Materials, Inc. | Temperature control system for semiconductor processing facilities |
| US6388226B1 (en) | 1997-06-26 | 2002-05-14 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
| US6815633B1 (en) | 1997-06-26 | 2004-11-09 | Applied Science & Technology, Inc. | Inductively-coupled toroidal plasma source |
| US8779322B2 (en) | 1997-06-26 | 2014-07-15 | Mks Instruments Inc. | Method and apparatus for processing metal bearing gases |
| US7166816B1 (en) | 1997-06-26 | 2007-01-23 | Mks Instruments, Inc. | Inductively-coupled torodial plasma source |
| US6150628A (en) | 1997-06-26 | 2000-11-21 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
| US7569790B2 (en) | 1997-06-26 | 2009-08-04 | Mks Instruments, Inc. | Method and apparatus for processing metal bearing gases |
| US6919054B2 (en) * | 2002-04-10 | 2005-07-19 | Neophotonics Corporation | Reactant nozzles within flowing reactors |
| US20010051118A1 (en) * | 1999-07-21 | 2001-12-13 | Ronald J. Mosso | Particle production apparatus |
| EP1166286A4 (en) | 1999-03-10 | 2005-08-10 | Neophotonics Corp | ZINC OXIDE PARTICLES |
| JP2001244249A (ja) * | 2000-03-01 | 2001-09-07 | Speedfam Co Ltd | 局部エッチング装置の放電管及びテーパ型放電管を用いた局部エッチング装置 |
| DE10143375C1 (de) * | 2001-09-05 | 2002-11-07 | Deutsch Zentr Luft & Raumfahrt | Pyrolysevorrichtung und Pyrolyseverfahren |
| US20040159335A1 (en) * | 2002-05-17 | 2004-08-19 | P.C.T. Systems, Inc. | Method and apparatus for removing organic layers |
| US20060027539A1 (en) * | 2003-05-02 | 2006-02-09 | Czeslaw Golkowski | Non-thermal plasma generator device |
| CN101954266B (zh) * | 2009-07-20 | 2013-03-20 | 北京思践通科技发展有限公司 | 一种化学反应设备及该设备在化学反应中的应用 |
| GB2553752A (en) * | 2016-07-01 | 2018-03-21 | Arcs Energy Ltd | Fluid treatment apparatus and method |
| CN108878248B (zh) * | 2017-05-16 | 2020-03-17 | 东京毅力科创株式会社 | 等离子体处理装置 |
| JP7058485B2 (ja) * | 2017-05-16 | 2022-04-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP7572702B2 (ja) * | 2018-09-06 | 2024-10-24 | 国立研究開発法人産業技術総合研究所 | マイクロ波処理装置、マイクロ波処理方法及び化学反応方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3428548A (en) * | 1966-09-27 | 1969-02-18 | Lab For Electronics Inc | Plasma reaction system for reacting a gas with a non-gaseous material |
| US3837856A (en) * | 1967-04-04 | 1974-09-24 | Signetics Corp | Method for removing photoresist in manufacture of semiconductor devices |
| US3577207A (en) * | 1969-05-07 | 1971-05-04 | Vladimir Pavlovich Kirjushin | Microwave plasmatron |
| US3775621A (en) * | 1972-12-29 | 1973-11-27 | Lfe Corp | Gas reaction apparatus |
-
1975
- 1975-07-18 JP JP50087235A patent/JPS5211175A/ja active Granted
-
1976
- 1976-07-06 GB GB28102/76A patent/GB1537100A/en not_active Expired
- 1976-07-15 US US05/705,694 patent/US4065369A/en not_active Expired - Lifetime
- 1976-07-16 DE DE2632194A patent/DE2632194C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4065369A (en) | 1977-12-27 |
| JPS5324779B2 (enExample) | 1978-07-22 |
| GB1537100A (en) | 1978-12-29 |
| JPS5211175A (en) | 1977-01-27 |
| DE2632194A1 (de) | 1977-01-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8128 | New person/name/address of the agent |
Representative=s name: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZ |
|
| 8125 | Change of the main classification |
Ipc: H05H 1/46 |
|
| D2 | Grant after examination | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP |
|
| 8364 | No opposition during term of opposition |