DE2624228A1 - Abfuehlschaltung in form eines schwellenwertunabhaengigen feldeffekttransistor-flip-flops - Google Patents

Abfuehlschaltung in form eines schwellenwertunabhaengigen feldeffekttransistor-flip-flops

Info

Publication number
DE2624228A1
DE2624228A1 DE19762624228 DE2624228A DE2624228A1 DE 2624228 A1 DE2624228 A1 DE 2624228A1 DE 19762624228 DE19762624228 DE 19762624228 DE 2624228 A DE2624228 A DE 2624228A DE 2624228 A1 DE2624228 A1 DE 2624228A1
Authority
DE
Germany
Prior art keywords
transistors
flop
flip
transistor
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19762624228
Other languages
German (de)
English (en)
Inventor
Dominic Patrick Spampinato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2624228A1 publication Critical patent/DE2624228A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356017—Bistable circuits using additional transistors in the input circuit
    • H03K3/356052—Bistable circuits using additional transistors in the input circuit using pass gates
    • H03K3/35606—Bistable circuits using additional transistors in the input circuit using pass gates with synchronous operation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16504—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
    • G01R19/16519—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using FET's
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356069—Bistable circuits using additional transistors in the feedback circuit
    • H03K3/356078—Bistable circuits using additional transistors in the feedback circuit with synchronous operation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356086—Bistable circuits with additional means for controlling the main nodes
    • H03K3/356095—Bistable circuits with additional means for controlling the main nodes with synchronous operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Shift Register Type Memory (AREA)
DE19762624228 1975-06-30 1976-05-29 Abfuehlschaltung in form eines schwellenwertunabhaengigen feldeffekttransistor-flip-flops Pending DE2624228A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59198375A 1975-06-30 1975-06-30

Publications (1)

Publication Number Publication Date
DE2624228A1 true DE2624228A1 (de) 1977-02-03

Family

ID=24368774

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762624228 Pending DE2624228A1 (de) 1975-06-30 1976-05-29 Abfuehlschaltung in form eines schwellenwertunabhaengigen feldeffekttransistor-flip-flops

Country Status (4)

Country Link
JP (1) JPS525248A (fr)
DE (1) DE2624228A1 (fr)
FR (1) FR2316791A1 (fr)
IT (1) IT1064304B (fr)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1904787B2 (de) * 1969-01-31 1977-07-21 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Elektrisches speicherelement und betrieb desselben

Also Published As

Publication number Publication date
IT1064304B (it) 1985-02-18
FR2316791B1 (fr) 1978-11-17
FR2316791A1 (fr) 1977-01-28
JPS525248A (en) 1977-01-14

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Legal Events

Date Code Title Description
OHJ Non-payment of the annual fee