DE2617201A1 - Integrierte injektionslogik - Google Patents
Integrierte injektionslogikInfo
- Publication number
- DE2617201A1 DE2617201A1 DE19762617201 DE2617201A DE2617201A1 DE 2617201 A1 DE2617201 A1 DE 2617201A1 DE 19762617201 DE19762617201 DE 19762617201 DE 2617201 A DE2617201 A DE 2617201A DE 2617201 A1 DE2617201 A1 DE 2617201A1
- Authority
- DE
- Germany
- Prior art keywords
- region
- transistor
- doped
- lateral
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000002347 injection Methods 0.000 title description 8
- 239000007924 injection Substances 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 229910021340 platinum monosilicide Inorganic materials 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052596 spinel Inorganic materials 0.000 claims description 2
- 239000011029 spinel Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 101100439253 Arabidopsis thaliana CHI3 gene Proteins 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762617201 DE2617201A1 (de) | 1976-04-20 | 1976-04-20 | Integrierte injektionslogik |
| FR7703009A FR2349218A1 (fr) | 1976-04-20 | 1977-02-03 | Systeme a logique d'injection integree |
| GB8918/77A GB1510101A (en) | 1976-04-20 | 1977-03-03 | Integrated injection logic arrangements |
| JP4402377A JPS52128046A (en) | 1976-04-20 | 1977-04-15 | Integrated injection logical circuit |
| IT22588/77A IT1084939B (it) | 1976-04-20 | 1977-04-19 | Logica ad iniezione integrata con un transistor laterale e con un transistor verticale,in uno strato di materiale semiconduttore |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762617201 DE2617201A1 (de) | 1976-04-20 | 1976-04-20 | Integrierte injektionslogik |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2617201A1 true DE2617201A1 (de) | 1977-11-03 |
Family
ID=5975771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762617201 Ceased DE2617201A1 (de) | 1976-04-20 | 1976-04-20 | Integrierte injektionslogik |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS52128046A (OSRAM) |
| DE (1) | DE2617201A1 (OSRAM) |
| FR (1) | FR2349218A1 (OSRAM) |
| GB (1) | GB1510101A (OSRAM) |
| IT (1) | IT1084939B (OSRAM) |
-
1976
- 1976-04-20 DE DE19762617201 patent/DE2617201A1/de not_active Ceased
-
1977
- 1977-02-03 FR FR7703009A patent/FR2349218A1/fr active Granted
- 1977-03-03 GB GB8918/77A patent/GB1510101A/en not_active Expired
- 1977-04-15 JP JP4402377A patent/JPS52128046A/ja active Pending
- 1977-04-19 IT IT22588/77A patent/IT1084939B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| FR2349218B1 (OSRAM) | 1980-03-21 |
| FR2349218A1 (fr) | 1977-11-18 |
| GB1510101A (en) | 1978-05-10 |
| JPS52128046A (en) | 1977-10-27 |
| IT1084939B (it) | 1985-05-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8131 | Rejection |