GB1510101A - Integrated injection logic arrangements - Google Patents

Integrated injection logic arrangements

Info

Publication number
GB1510101A
GB1510101A GB891877A GB891877A GB1510101A GB 1510101 A GB1510101 A GB 1510101A GB 891877 A GB891877 A GB 891877A GB 891877 A GB891877 A GB 891877A GB 1510101 A GB1510101 A GB 1510101A
Authority
GB
United Kingdom
Prior art keywords
zone
conductivity type
base
schottky
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB891877A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1510101A publication Critical patent/GB1510101A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Logic Circuits (AREA)

Abstract

1510101 Integrated circuit device SIEMENS AG 3 March 1977 [20 April 1976] 8918/77 Heading H1K An I<2>L arrangement comprises a semiconductor, e.g. Si layer of a first conductivity type on an insulating substrate 3, e.g. of sapphire or spinel, emitter and collector zones 14, 15 of a lateral transistor 1, of a second conductivity type in the semiconducter layer, a base zone 17 of a vertical transistor 2 adjoining and making electrical contact with the collector zone 15, both of second conductivity type, the the base zone 17 also forming a Schottky contact with a collector electrode 23, e.g. of Al or PtSi, of the vertical transistor and a highly doped region 25 of the first conductivity type underlying the lateral transistor and at least a part of the base zone 17, the highly doped zone acting as the emitter zone of the vertical transistor and interconnecting a base zone 11 of the lateral transistor with the base contact zone 21. In another embodiment, the base zone extends beyond the highly doped region 25 and is provided with Schottky diodes. The electrode material(s) of the Schottky diodes, e.g. Ti is so selected that the Schottky barrier(s) of the diodes is lower than that of the Schottky junction between the collector and the base zone of the vertical transistor.
GB891877A 1976-04-20 1977-03-03 Integrated injection logic arrangements Expired GB1510101A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762617201 DE2617201A1 (en) 1976-04-20 1976-04-20 INTEGRATED INJECTION LOGIC

Publications (1)

Publication Number Publication Date
GB1510101A true GB1510101A (en) 1978-05-10

Family

ID=5975771

Family Applications (1)

Application Number Title Priority Date Filing Date
GB891877A Expired GB1510101A (en) 1976-04-20 1977-03-03 Integrated injection logic arrangements

Country Status (5)

Country Link
JP (1) JPS52128046A (en)
DE (1) DE2617201A1 (en)
FR (1) FR2349218A1 (en)
GB (1) GB1510101A (en)
IT (1) IT1084939B (en)

Also Published As

Publication number Publication date
IT1084939B (en) 1985-05-28
FR2349218B1 (en) 1980-03-21
FR2349218A1 (en) 1977-11-18
DE2617201A1 (en) 1977-11-03
JPS52128046A (en) 1977-10-27

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee