GB1510101A - Integrated injection logic arrangements - Google Patents
Integrated injection logic arrangementsInfo
- Publication number
- GB1510101A GB1510101A GB891877A GB891877A GB1510101A GB 1510101 A GB1510101 A GB 1510101A GB 891877 A GB891877 A GB 891877A GB 891877 A GB891877 A GB 891877A GB 1510101 A GB1510101 A GB 1510101A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- conductivity type
- base
- schottky
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002347 injection Methods 0.000 title 1
- 239000007924 injection Substances 0.000 title 1
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 abstract 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052596 spinel Inorganic materials 0.000 abstract 1
- 239000011029 spinel Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Logic Circuits (AREA)
Abstract
1510101 Integrated circuit device SIEMENS AG 3 March 1977 [20 April 1976] 8918/77 Heading H1K An I<2>L arrangement comprises a semiconductor, e.g. Si layer of a first conductivity type on an insulating substrate 3, e.g. of sapphire or spinel, emitter and collector zones 14, 15 of a lateral transistor 1, of a second conductivity type in the semiconducter layer, a base zone 17 of a vertical transistor 2 adjoining and making electrical contact with the collector zone 15, both of second conductivity type, the the base zone 17 also forming a Schottky contact with a collector electrode 23, e.g. of Al or PtSi, of the vertical transistor and a highly doped region 25 of the first conductivity type underlying the lateral transistor and at least a part of the base zone 17, the highly doped zone acting as the emitter zone of the vertical transistor and interconnecting a base zone 11 of the lateral transistor with the base contact zone 21. In another embodiment, the base zone extends beyond the highly doped region 25 and is provided with Schottky diodes. The electrode material(s) of the Schottky diodes, e.g. Ti is so selected that the Schottky barrier(s) of the diodes is lower than that of the Schottky junction between the collector and the base zone of the vertical transistor.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19762617201 DE2617201A1 (en) | 1976-04-20 | 1976-04-20 | INTEGRATED INJECTION LOGIC |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1510101A true GB1510101A (en) | 1978-05-10 |
Family
ID=5975771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB891877A Expired GB1510101A (en) | 1976-04-20 | 1977-03-03 | Integrated injection logic arrangements |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS52128046A (en) |
DE (1) | DE2617201A1 (en) |
FR (1) | FR2349218A1 (en) |
GB (1) | GB1510101A (en) |
IT (1) | IT1084939B (en) |
-
1976
- 1976-04-20 DE DE19762617201 patent/DE2617201A1/en not_active Ceased
-
1977
- 1977-02-03 FR FR7703009A patent/FR2349218A1/en active Granted
- 1977-03-03 GB GB891877A patent/GB1510101A/en not_active Expired
- 1977-04-15 JP JP4402377A patent/JPS52128046A/en active Pending
- 1977-04-19 IT IT2258877A patent/IT1084939B/en active
Also Published As
Publication number | Publication date |
---|---|
IT1084939B (en) | 1985-05-28 |
FR2349218B1 (en) | 1980-03-21 |
FR2349218A1 (en) | 1977-11-18 |
DE2617201A1 (en) | 1977-11-03 |
JPS52128046A (en) | 1977-10-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0272453A3 (en) | Merged bipolar/cmos technology using electrically active trench | |
KR900000817B1 (en) | Semiconductor ic device manufacturing method | |
KR930005234A (en) | Schottky Barrier Diodes and Schottky Barrier Diode Clamped Transistors and Methods of Making Them | |
JPS54157092A (en) | Semiconductor integrated circuit device | |
EP0268426A3 (en) | High speed junction field effect transistor for use in bipolar integrated circuits | |
MY104983A (en) | Vertical bipolar transistor. | |
US4191964A (en) | Headless resistor | |
GB1246864A (en) | Transistor | |
KR840008213A (en) | Semiconductor devices | |
JPS56100461A (en) | Semiconductor ic device | |
GB1510101A (en) | Integrated injection logic arrangements | |
GB1529216A (en) | Lateral bipolar transistor | |
GB1481184A (en) | Integrated circuits | |
KR940008130A (en) | Semiconductor device and manufacturing method thereof | |
GB1517251A (en) | Semiconductor devices | |
JPS57162360A (en) | Complementary insulated gate field effect semiconductor device | |
GB1433667A (en) | Bipolar transistors | |
KR950015808A (en) | Semiconductor device | |
JPS57192069A (en) | Insulated gate field effect semiconductor device | |
JPS56108255A (en) | Semiconductor integrated circuit | |
US4958210A (en) | High voltage integrated circuits | |
KR890007402A (en) | Semiconductor device | |
KR840002584A (en) | Semiconductor devices | |
GB1249812A (en) | Improvements relating to semiconductor devices | |
KR940003293Y1 (en) | Isolation zenner diode |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |