DE2607194C2 - Halbleiteranordnung - Google Patents
HalbleiteranordnungInfo
- Publication number
- DE2607194C2 DE2607194C2 DE2607194A DE2607194A DE2607194C2 DE 2607194 C2 DE2607194 C2 DE 2607194C2 DE 2607194 A DE2607194 A DE 2607194A DE 2607194 A DE2607194 A DE 2607194A DE 2607194 C2 DE2607194 C2 DE 2607194C2
- Authority
- DE
- Germany
- Prior art keywords
- base
- zones
- zone
- strip
- phototransistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 230000007704 transition Effects 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101710170963 Darlin Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
Landscapes
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7506360A FR2302594A1 (fr) | 1975-02-28 | 1975-02-28 | Dispositif semi-conducteur integre |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2607194A1 DE2607194A1 (de) | 1976-09-09 |
| DE2607194C2 true DE2607194C2 (de) | 1983-08-18 |
Family
ID=9151921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2607194A Expired DE2607194C2 (de) | 1975-02-28 | 1976-02-23 | Halbleiteranordnung |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4078244A (en:Method) |
| JP (1) | JPS5310434B2 (en:Method) |
| CA (1) | CA1047170A (en:Method) |
| DE (1) | DE2607194C2 (en:Method) |
| FR (1) | FR2302594A1 (en:Method) |
| GB (1) | GB1533615A (en:Method) |
| NL (1) | NL7601784A (en:Method) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4167748A (en) * | 1978-07-03 | 1979-09-11 | Bell Telephone Laboratories, Incorporated | High voltage monolithic transistor circuit |
| JPS5850030B2 (ja) | 1979-03-08 | 1983-11-08 | 日本放送協会 | 光電変換装置およびそれを用いた固体撮像板 |
| US4329705A (en) * | 1979-05-21 | 1982-05-11 | Exxon Research & Engineering Co. | VMOS/Bipolar power switching device |
| NL8005995A (nl) * | 1980-11-03 | 1982-06-01 | Philips Nv | Halfgeleiderinrichting. |
| US4412142A (en) * | 1980-12-24 | 1983-10-25 | General Electric Company | Integrated circuit incorporating low voltage and high voltage semiconductor devices |
| JPS58184855U (ja) * | 1982-06-01 | 1983-12-08 | シャープ株式会社 | ホトトランジスタ |
| DE8535109U1 (de) * | 1985-12-13 | 1989-05-11 | Heimann Gmbh, 6200 Wiesbaden | Kontaktbildsensorzeile |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1035727A (en) * | 1965-12-22 | 1966-07-13 | Standard Telephones Cables Ltd | Semiconductor devices |
| DE1764455C3 (de) * | 1968-06-08 | 1980-02-07 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithisch integrierte Darlington-Transistorschaltung |
| DE2206354A1 (de) * | 1971-02-11 | 1972-10-05 | Motorola Inc | Dual-verbundene Mesa-Transistoren |
| US3936856A (en) * | 1974-05-28 | 1976-02-03 | International Business Machines Corporation | Space-charge-limited integrated circuit structure |
-
1975
- 1975-02-28 FR FR7506360A patent/FR2302594A1/fr active Granted
-
1976
- 1976-02-19 CA CA246,293A patent/CA1047170A/en not_active Expired
- 1976-02-23 DE DE2607194A patent/DE2607194C2/de not_active Expired
- 1976-02-23 US US05/660,499 patent/US4078244A/en not_active Expired - Lifetime
- 1976-02-23 NL NL7601784A patent/NL7601784A/xx not_active Application Discontinuation
- 1976-02-25 GB GB7413/76A patent/GB1533615A/en not_active Expired
- 1976-02-26 JP JP1949076A patent/JPS5310434B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA1047170A (en) | 1979-01-23 |
| JPS5310434B2 (en:Method) | 1978-04-13 |
| DE2607194A1 (de) | 1976-09-09 |
| FR2302594B1 (en:Method) | 1978-07-13 |
| NL7601784A (nl) | 1976-08-31 |
| GB1533615A (en) | 1978-11-29 |
| US4078244A (en) | 1978-03-07 |
| JPS51110289A (en:Method) | 1976-09-29 |
| FR2302594A1 (fr) | 1976-09-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |