JPS5310434B2 - - Google Patents

Info

Publication number
JPS5310434B2
JPS5310434B2 JP1949076A JP1949076A JPS5310434B2 JP S5310434 B2 JPS5310434 B2 JP S5310434B2 JP 1949076 A JP1949076 A JP 1949076A JP 1949076 A JP1949076 A JP 1949076A JP S5310434 B2 JPS5310434 B2 JP S5310434B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1949076A
Other versions
JPS51110289A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS51110289A publication Critical patent/JPS51110289A/ja
Publication of JPS5310434B2 publication Critical patent/JPS5310434B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
JP1949076A 1975-02-28 1976-02-26 Expired JPS5310434B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7506360A FR2302594A1 (fr) 1975-02-28 1975-02-28 Dispositif semi-conducteur integre

Publications (2)

Publication Number Publication Date
JPS51110289A JPS51110289A (ja) 1976-09-29
JPS5310434B2 true JPS5310434B2 (ja) 1978-04-13

Family

ID=9151921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1949076A Expired JPS5310434B2 (ja) 1975-02-28 1976-02-26

Country Status (7)

Country Link
US (1) US4078244A (ja)
JP (1) JPS5310434B2 (ja)
CA (1) CA1047170A (ja)
DE (1) DE2607194C2 (ja)
FR (1) FR2302594A1 (ja)
GB (1) GB1533615A (ja)
NL (1) NL7601784A (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4167748A (en) * 1978-07-03 1979-09-11 Bell Telephone Laboratories, Incorporated High voltage monolithic transistor circuit
US4329705A (en) * 1979-05-21 1982-05-11 Exxon Research & Engineering Co. VMOS/Bipolar power switching device
NL8005995A (nl) * 1980-11-03 1982-06-01 Philips Nv Halfgeleiderinrichting.
US4412142A (en) * 1980-12-24 1983-10-25 General Electric Company Integrated circuit incorporating low voltage and high voltage semiconductor devices
JPS58184855U (ja) * 1982-06-01 1983-12-08 シャープ株式会社 ホトトランジスタ
DE3544121A1 (de) * 1985-12-13 1987-06-19 Heimann Gmbh Kontaktbildsensorzeile

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1035727A (en) * 1965-12-22 1966-07-13 Standard Telephones Cables Ltd Semiconductor devices
DE1764455C3 (de) * 1968-06-08 1980-02-07 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte Darlington-Transistorschaltung
DE2206354A1 (de) * 1971-02-11 1972-10-05 Motorola Inc Dual-verbundene Mesa-Transistoren
US3936856A (en) * 1974-05-28 1976-02-03 International Business Machines Corporation Space-charge-limited integrated circuit structure

Also Published As

Publication number Publication date
JPS51110289A (ja) 1976-09-29
US4078244A (en) 1978-03-07
GB1533615A (en) 1978-11-29
NL7601784A (nl) 1976-08-31
CA1047170A (en) 1979-01-23
FR2302594A1 (fr) 1976-09-24
FR2302594B1 (ja) 1978-07-13
DE2607194C2 (de) 1983-08-18
DE2607194A1 (de) 1976-09-09

Similar Documents

Publication Publication Date Title
FR2305452B1 (ja)
JPS5310434B2 (ja)
JPS5250236U (ja)
JPS5746367B2 (ja)
JPS554615B2 (ja)
JPS527192U (ja)
JPS5753989B2 (ja)
JPS51102695U (ja)
JPS51145481U (ja)
JPS5284406U (ja)
JPS5278657U (ja)
JPS51138584U (ja)
JPS5270747U (ja)
JPS5190848A (ja)
JPS5259090U (ja)
JPS5190991U (ja)
CH609506A5 (ja)
CH604909A5 (ja)
BG21546A1 (ja)
CH594800A5 (ja)
BE844701A (ja)
CH593803A5 (ja)
CH610751A5 (ja)
CH609611A5 (ja)
CH604784A5 (ja)