DE2602801A1 - Lichtemissionsdiode - Google Patents

Lichtemissionsdiode

Info

Publication number
DE2602801A1
DE2602801A1 DE19762602801 DE2602801A DE2602801A1 DE 2602801 A1 DE2602801 A1 DE 2602801A1 DE 19762602801 DE19762602801 DE 19762602801 DE 2602801 A DE2602801 A DE 2602801A DE 2602801 A1 DE2602801 A1 DE 2602801A1
Authority
DE
Germany
Prior art keywords
concentration
light emitting
light emission
emitting diode
layer part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19762602801
Other languages
German (de)
English (en)
Inventor
Kunio Kaneko
Hiroyuki Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2602801A1 publication Critical patent/DE2602801A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details

Landscapes

  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE19762602801 1975-01-29 1976-01-26 Lichtemissionsdiode Withdrawn DE2602801A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1222875A JPS551717B2 (enExample) 1975-01-29 1975-01-29

Publications (1)

Publication Number Publication Date
DE2602801A1 true DE2602801A1 (de) 1976-08-05

Family

ID=11799503

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762602801 Withdrawn DE2602801A1 (de) 1975-01-29 1976-01-26 Lichtemissionsdiode

Country Status (5)

Country Link
JP (1) JPS551717B2 (enExample)
CA (1) CA1037150A (enExample)
DE (1) DE2602801A1 (enExample)
GB (1) GB1512322A (enExample)
NL (1) NL7600820A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4562378A (en) * 1982-07-08 1985-12-31 Sanyo Electric Co., Ltd. Gallium phosphide light-emitting diode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3646406A (en) * 1970-06-30 1972-02-29 Bell Telephone Labor Inc Electroluminescent pnjunction diodes with nonuniform distribution of isoelectronic traps
GB1320043A (en) * 1969-08-08 1973-06-13 Western Electric Co Gallium phosphide electroluminescent light sources

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2297494A1 (fr) * 1975-01-07 1976-08-06 Radiotechnique Compelec Procede de realisation de cristaux semiconducteurs a pieges isoelectroniques d'azote et cristaux ainsi fabriques

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1320043A (en) * 1969-08-08 1973-06-13 Western Electric Co Gallium phosphide electroluminescent light sources
US3646406A (en) * 1970-06-30 1972-02-29 Bell Telephone Labor Inc Electroluminescent pnjunction diodes with nonuniform distribution of isoelectronic traps

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
"J. of Physics C: Solid State Physics" 4(18.11.1971)L344-L347 *
"Proc. of the IEEE" 61(1973)880-884 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4562378A (en) * 1982-07-08 1985-12-31 Sanyo Electric Co., Ltd. Gallium phosphide light-emitting diode

Also Published As

Publication number Publication date
JPS5186988A (enExample) 1976-07-30
CA1037150A (en) 1978-08-22
JPS551717B2 (enExample) 1980-01-16
GB1512322A (en) 1978-06-01
NL7600820A (nl) 1976-08-02

Similar Documents

Publication Publication Date Title
DE2738329C2 (enExample)
DE68918361T2 (de) Elektrolumineszierende Anordnung von Verbindungshalbleitern.
DE69525700T2 (de) Verfahren zur Herstellung einer lichtemittierenden Halbleitervorrichtung
DE3123231C2 (enExample)
DE2107149C3 (de) Verfahren zur Herstellung eines hchtstrahlen abgebenden Mehrschicht Halbleiterbauelementes
DE4010133C2 (enExample)
DE19939471B4 (de) Halbleiterleuchtdiode mit Stromdiffusionsschicht
DE3123234A1 (de) "verfahren zur herstellung eines pn-uebergangs in einem halbleitermaterial der gruppe ii-vi"
DE2039381A1 (de) Verfahren zur Herstellung einer Elektrolumineszenz-Vorrichtung und Vorrichtung dieser Art
DE4130536A1 (de) Laserdiode fuer sichtbares licht
DE3237536C2 (de) Verfahren zur Herstellung eines p-leitenden (II/VI)-Verbindungshalbleiterkristalls
DE1183174B (de) Optischer Halbleiterdioden-Sender oder -Verstaerker
DE19806536A1 (de) Grünes Licht emittierendes Galliumphosphid-Bauteil
DE3887790T2 (de) Lichtemittierende Halbleitervorrichtung.
DE2602801A1 (de) Lichtemissionsdiode
DE2843983C2 (de) Verfahren zum Herstellen einer Grünlicht emittierenden GaP-Lumineszenzdiode
DE69313573T2 (de) Verfahren zur Herstellung eines GaP lichtemittierenden Elementes
DE69207069T2 (de) Lichtemittierende Halbleitervorrichtung
DE3325058A1 (de) Verfahren und vorrichtung zum aufwachsen einer znse-kristalls aus einer schmelze
DE3123232A1 (de) "verfahren zur herstellung eines pn-uebergangs in einem n-leitenden halbleiter der gruppe ii-vi"
DE2439425C3 (de) Verfahren zur Herstellung eines Galliumphosphid-Körpers mit einem pn-Übergang
DE3323699C2 (de) Verfahren zum Umkristallisieren eines ZnSe-Kristalls aus einer Se-Schmelzlösung
DE2346198A1 (de) Verfahren zur herstellung gelb leuchtender galliumphosphid-dioden
DE2416394A1 (de) Verfahren zur herstellung einer gruenlicht emittierenden galliumphosphid-vorrich- tung
DE2910223A1 (de) Pleochroitisches licht strahlende diode und verfahren zu deren herstellung

Legal Events

Date Code Title Description
OB Request for examination as to novelty
OC Search report available
8110 Request for examination paragraph 44
8139 Disposal/non-payment of the annual fee