FR2297494A1 - Procede de realisation de cristaux semiconducteurs a pieges isoelectroniques d'azote et cristaux ainsi fabriques - Google Patents
Procede de realisation de cristaux semiconducteurs a pieges isoelectroniques d'azote et cristaux ainsi fabriquesInfo
- Publication number
- FR2297494A1 FR2297494A1 FR7500310A FR7500310A FR2297494A1 FR 2297494 A1 FR2297494 A1 FR 2297494A1 FR 7500310 A FR7500310 A FR 7500310A FR 7500310 A FR7500310 A FR 7500310A FR 2297494 A1 FR2297494 A1 FR 2297494A1
- Authority
- FR
- France
- Prior art keywords
- crystals
- isoelectronic
- manufactured
- making semiconductor
- nitrogen traps
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7500310A FR2297494A1 (fr) | 1975-01-07 | 1975-01-07 | Procede de realisation de cristaux semiconducteurs a pieges isoelectroniques d'azote et cristaux ainsi fabriques |
CA242,436A CA1047636A (fr) | 1975-01-07 | 1975-12-23 | Diodes electroluminescentes avec pieges isoelectroniques d'azote |
DE2558757A DE2558757C2 (de) | 1975-01-07 | 1975-12-24 | Verfahren zur Herstellung einer elektrolumineszierenden Diode |
GB53302/75A GB1533400A (en) | 1975-01-07 | 1975-12-31 | Electroluminescent diode manufacture |
JP71276A JPS5193691A (fr) | 1975-01-07 | 1976-01-05 | |
US05/798,316 US4154630A (en) | 1975-01-07 | 1977-05-19 | Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7500310A FR2297494A1 (fr) | 1975-01-07 | 1975-01-07 | Procede de realisation de cristaux semiconducteurs a pieges isoelectroniques d'azote et cristaux ainsi fabriques |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2297494A1 true FR2297494A1 (fr) | 1976-08-06 |
FR2297494B1 FR2297494B1 (fr) | 1978-03-10 |
Family
ID=9149464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7500310A Granted FR2297494A1 (fr) | 1975-01-07 | 1975-01-07 | Procede de realisation de cristaux semiconducteurs a pieges isoelectroniques d'azote et cristaux ainsi fabriques |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5193691A (fr) |
CA (1) | CA1047636A (fr) |
DE (1) | DE2558757C2 (fr) |
FR (1) | FR2297494A1 (fr) |
GB (1) | GB1533400A (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS551717B2 (fr) * | 1975-01-29 | 1980-01-16 | ||
DE19824566C1 (de) * | 1998-06-02 | 1999-12-02 | Siemens Ag | GaP-Halbleiteranordnung und Verfahren zur Herstellung derselben |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3646406A (en) * | 1970-06-30 | 1972-02-29 | Bell Telephone Labor Inc | Electroluminescent pnjunction diodes with nonuniform distribution of isoelectronic traps |
GB1316490A (en) * | 1970-12-17 | 1973-05-09 | Ferranti Ltd | Electroluminescent devices |
JPS5325634B2 (fr) * | 1973-04-04 | 1978-07-27 |
-
1975
- 1975-01-07 FR FR7500310A patent/FR2297494A1/fr active Granted
- 1975-12-23 CA CA242,436A patent/CA1047636A/fr not_active Expired
- 1975-12-24 DE DE2558757A patent/DE2558757C2/de not_active Expired
- 1975-12-31 GB GB53302/75A patent/GB1533400A/en not_active Expired
-
1976
- 1976-01-05 JP JP71276A patent/JPS5193691A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS5193691A (fr) | 1976-08-17 |
GB1533400A (en) | 1978-11-22 |
DE2558757A1 (de) | 1976-07-08 |
DE2558757C2 (de) | 1987-04-23 |
CA1047636A (fr) | 1979-01-30 |
FR2297494B1 (fr) | 1978-03-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CA | Change of address | ||
CD | Change of name or company name | ||
ST | Notification of lapse |