GB1512322A - Light emitting diodes - Google Patents

Light emitting diodes

Info

Publication number
GB1512322A
GB1512322A GB233276A GB233276A GB1512322A GB 1512322 A GB1512322 A GB 1512322A GB 233276 A GB233276 A GB 233276A GB 233276 A GB233276 A GB 233276A GB 1512322 A GB1512322 A GB 1512322A
Authority
GB
United Kingdom
Prior art keywords
light emitting
substrate
emitting diodes
type
jan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB233276A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1512322A publication Critical patent/GB1512322A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/305Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1512322 Light emitting diodes SONY CORP 21 Jan 1976 [29 Jan 1975] 2332/76 Heading H1K A green light emitting diode comprises, on a GaP substrate 1, e.g. of N-type, an N-containing epitaxial GaP layer 2 including a first N-type portion 2n adjacent the substrate 1 and a second P-type portion 2p on the portion 2n. The doner concentration in the portion 2n is 1 Î 10<17>-2 x 10<18> atoms/cm.<3> and the acceptor concentration gradient in the portion 2p adjacent the PN-junction J is not less than 7 x 10<20> atoms/cm.<3> per cm. The substrate 1 is preferably doped with S or Te, the portion 2n with N and S or Te and the portion 2p with Zn and N. An apparatus and method for the liquid phase epitaxial deposition of such a diode is disclosed.
GB233276A 1975-01-29 1976-01-21 Light emitting diodes Expired GB1512322A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1222875A JPS551717B2 (en) 1975-01-29 1975-01-29

Publications (1)

Publication Number Publication Date
GB1512322A true GB1512322A (en) 1978-06-01

Family

ID=11799503

Family Applications (1)

Application Number Title Priority Date Filing Date
GB233276A Expired GB1512322A (en) 1975-01-29 1976-01-21 Light emitting diodes

Country Status (5)

Country Link
JP (1) JPS551717B2 (en)
CA (1) CA1037150A (en)
DE (1) DE2602801A1 (en)
GB (1) GB1512322A (en)
NL (1) NL7600820A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4562378A (en) * 1982-07-08 1985-12-31 Sanyo Electric Co., Ltd. Gallium phosphide light-emitting diode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE754437A (en) * 1969-08-08 1971-01-18 Western Electric Co IMPROVED ELECTROLUMINESCENT DEVICE
US3646406A (en) * 1970-06-30 1972-02-29 Bell Telephone Labor Inc Electroluminescent pnjunction diodes with nonuniform distribution of isoelectronic traps
FR2297494A1 (en) * 1975-01-07 1976-08-06 Radiotechnique Compelec PROCESS FOR MAKING SEMICONDUCTOR CRYSTALS WITH ISOELECTRONIC NITROGEN TRAPS AND CRYSTALS THUS MANUFACTURED

Also Published As

Publication number Publication date
NL7600820A (en) 1976-08-02
JPS551717B2 (en) 1980-01-16
DE2602801A1 (en) 1976-08-05
JPS5186988A (en) 1976-07-30
CA1037150A (en) 1978-08-22

Similar Documents

Publication Publication Date Title
MY105078A (en) Blue light emitting diode formed in silicon carbide.
DE3580891D1 (en) SEMICONDUCTOR ARRANGEMENT WITH SEVERAL TRANSITIONS.
FR2549642B1 (en) SOLAR CELL
GB1512322A (en) Light emitting diodes
JPS55141769A (en) Electric field light emitting element
JPS54152878A (en) Structure of semiconductor laser element and its manufacture
US3745073A (en) Single-step process for making p-n junctions in zinc selenide
GB1494254A (en) Liquid phase epitaxial growth
EP0685892A3 (en) Method for producing light-emitting diode
GB1442506A (en) Production of yellow output radiation gallium phosphide lumin escence diodes
KR790000518B1 (en) Method of producing gallium phosphide redlight emission diode
JPS5670676A (en) Luminous diode
JPS6424472A (en) Semiconductor photodetector
GB1392955A (en) Light emitting diode
GB1533400A (en) Electroluminescent diode manufacture
KR790000583B1 (en) Method of making gallium phosphide red-light emmision diode
JPS5539685A (en) Semiconductor device
JPS561528A (en) Manufacture of epitaxial wafer of 3-5 group compound semiconductor
JPS5437098A (en) Method of producing gallium phosphide greenish luminous element
JPS5790990A (en) Semiconductor light emitting device
KR790000584B1 (en) Method of making gallium phosphide light emmission element
JPS57206838A (en) Detection element for infrared rays
JPS5539643A (en) Semiconductor light receiver-emitter
JPS5731184A (en) Semiconductor light-emitting element and manufacture thereof
GB1316490A (en) Electroluminescent devices

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee