GB1512322A - Light emitting diodes - Google Patents
Light emitting diodesInfo
- Publication number
- GB1512322A GB1512322A GB233276A GB233276A GB1512322A GB 1512322 A GB1512322 A GB 1512322A GB 233276 A GB233276 A GB 233276A GB 233276 A GB233276 A GB 233276A GB 1512322 A GB1512322 A GB 1512322A
- Authority
- GB
- United Kingdom
- Prior art keywords
- light emitting
- substrate
- emitting diodes
- type
- jan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 abstract 3
- 230000008021 deposition Effects 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1512322 Light emitting diodes SONY CORP 21 Jan 1976 [29 Jan 1975] 2332/76 Heading H1K A green light emitting diode comprises, on a GaP substrate 1, e.g. of N-type, an N-containing epitaxial GaP layer 2 including a first N-type portion 2n adjacent the substrate 1 and a second P-type portion 2p on the portion 2n. The doner concentration in the portion 2n is 1 Î 10<17>-2 x 10<18> atoms/cm.<3> and the acceptor concentration gradient in the portion 2p adjacent the PN-junction J is not less than 7 x 10<20> atoms/cm.<3> per cm. The substrate 1 is preferably doped with S or Te, the portion 2n with N and S or Te and the portion 2p with Zn and N. An apparatus and method for the liquid phase epitaxial deposition of such a diode is disclosed.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1222875A JPS551717B2 (en) | 1975-01-29 | 1975-01-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1512322A true GB1512322A (en) | 1978-06-01 |
Family
ID=11799503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB233276A Expired GB1512322A (en) | 1975-01-29 | 1976-01-21 | Light emitting diodes |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS551717B2 (en) |
CA (1) | CA1037150A (en) |
DE (1) | DE2602801A1 (en) |
GB (1) | GB1512322A (en) |
NL (1) | NL7600820A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4562378A (en) * | 1982-07-08 | 1985-12-31 | Sanyo Electric Co., Ltd. | Gallium phosphide light-emitting diode |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE754437A (en) * | 1969-08-08 | 1971-01-18 | Western Electric Co | IMPROVED ELECTROLUMINESCENT DEVICE |
US3646406A (en) * | 1970-06-30 | 1972-02-29 | Bell Telephone Labor Inc | Electroluminescent pnjunction diodes with nonuniform distribution of isoelectronic traps |
FR2297494A1 (en) * | 1975-01-07 | 1976-08-06 | Radiotechnique Compelec | PROCESS FOR MAKING SEMICONDUCTOR CRYSTALS WITH ISOELECTRONIC NITROGEN TRAPS AND CRYSTALS THUS MANUFACTURED |
-
1975
- 1975-01-29 JP JP1222875A patent/JPS551717B2/ja not_active Expired
-
1976
- 1976-01-21 GB GB233276A patent/GB1512322A/en not_active Expired
- 1976-01-22 CA CA244,104A patent/CA1037150A/en not_active Expired
- 1976-01-26 DE DE19762602801 patent/DE2602801A1/en not_active Withdrawn
- 1976-01-27 NL NL7600820A patent/NL7600820A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
NL7600820A (en) | 1976-08-02 |
JPS551717B2 (en) | 1980-01-16 |
DE2602801A1 (en) | 1976-08-05 |
JPS5186988A (en) | 1976-07-30 |
CA1037150A (en) | 1978-08-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |